Patents by Inventor STEVEN K. COOK

STEVEN K. COOK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10364191
    Abstract: A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: July 30, 2019
    Assignee: Battelle Energy Alliance, LLC
    Inventors: Henry S. Chu, Robert C. O'Brien, Steven K. Cook, Michael P. Bakas
  • Publication number: 20190062221
    Abstract: A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
    Type: Application
    Filed: October 30, 2018
    Publication date: February 28, 2019
    Inventors: Henry S. Chu, Robert C. O'Brien, Steven K. Cook, Michael P. Bakas
  • Patent number: 10207956
    Abstract: A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: February 19, 2019
    Assignee: Battelle Energy Alliance, LLC
    Inventors: Henry S Chu, Robert C O'Brien, Steven K Cook, Michael P Bakas
  • Publication number: 20170369381
    Abstract: A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
    Type: Application
    Filed: June 28, 2016
    Publication date: December 28, 2017
    Inventors: HENRY S. CHU, ROBERT C. O'BRIEN, STEVEN K. COOK, MICHAEL P. BAKAS