Abstract: An apparatus for electroplating a metal on a semiconductor substrate with high control over plated thickness on a die-level includes an ionically resistive ionically permeable element (e.g., a plate with channels), where the element allows for flow of ionic current through the element towards the substrate during electroplating, where the element includes a plurality of regions, each region having a pattern of varied local resistance, and where the pattern of varied local resistance repeats in at least two regions. An electroplating method includes providing a semiconductor substrate to an electroplating apparatus having an ionically resistive ionically permeable element or a grid-like shield having a pattern correlating with a pattern of features on the substrate, and plating metal, while the pattern on the substrate remains spatially aligned with the pattern of the element or the grid-like shield for at least a portion of the total electroplating time.