Abstract: Methods and apparatuses for single tripping a tool for injecting gas into a reservoir to improve production are shown herein.

Abstract: Methods and apparatuses for single tripping a tool for injecting gas into a reservoir to improve production are shown herein.

Abstract: A pulse shaping circuit includes a series resistor and shunt capacitor that is switched from a finite capacitance value to a substantially open circuit in response to the voltage across the capacitor being on opposite sides of a threshold. The capacitor comprises a MOSFET having a gate connected to the resistor and a source drain path, connected to ground and +Vdd in first and second embodiments, respectively.

Abstract: An process for efficient controlled N-type silicon doping of Group III-V materials. Through the present invention silicon may be introduced into Group III-V materials at incorporation efficiencies in excess of 10.sup.-4. In a preferred embodiment doping with silicon tetrabromide attains incorporation efficiencies of approximately 0.37. Silicon incorporation efficiencies of approximately 1 should be obtained using silicon tetraiodide. The silicon dopant sources of the present invention may be used to accurately selectively produce net electron concentrations varying from approximately 1.times.10.sup.16 to 1.2.times.10.sup.20 cm.sup.-3. Favorable room temperature vapor pressures of the dopants used in accordance with the present invention allow for production of abrupt doping profiles. Additionally, high photoluminescence peak values, and low contact and sheet resistances are obtained through the present invention.