Abstract: Methods for growing single crystal ingots doped with volatile dopants and ingots grown according to the methods are described herein.

Abstract: Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.

Abstract: A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.

Abstract: Methods and systems for evaluation of wafers are disclosed. One example method includes illuminating a multi-crystalline wafer according to a plurality of lighting parameters, capturing a plurality of images of the multi-crystalline wafer, stacking and projecting the plurality of images to generate a composite image, analyzing the composite image to identify one or more grains of the multi-crystalline wafer, and generating a report based on the analysis of the composite image. The multi-crystalline wafer is illuminated according to a different one of the plurality of lighting parameters in at least two of the plurality of images.

Abstract: Methods for producing muticrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots.

Abstract: Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed.

Abstract: A dopant funnel for loading dopant pellets into a dispenser tube of a dopant dispenser is disclosed. The dopant funnel has a cup connected through a restrictor to a shaft. The cup holds random oriented dopant pellets. The restrictor meters the amount and orientation of dopant pellets being removed from the cup. The shaft is in alignment with the restrictor for delivering dopant pellets from the cup to the dispenser tube.

Abstract: Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.

Abstract: Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed.

Abstract: Methods for producing multicrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots.

Abstract: Methods and systems for evaluation of wafers are disclosed. One example method includes illuminating a multi-crystalline wafer according to a plurality of lighting parameters, capturing a plurality of images of the multi-crystalline wafer, stacking and projecting the plurality of images to generate a composite image, analyzing the composite image to identify one or more grains of the multi-crystalline wafer, and generating a report based on the analysis of the composite image. The multi-crystalline wafer is illuminated according to a different one of the plurality of lighting parameters in at least two of the plurality of images.

Abstract: Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed.

Abstract: Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed.

Abstract: Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed.

Abstract: Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed.

Abstract: A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.

Abstract: Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.

Abstract: A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.

Abstract: Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.

Abstract: Methods for cropping a cylindrical ingot and, in some particular embodiments, for cropping a multicrystalline ingot such as a multicrystalline silicon ingot.