Abstract: Under one aspect, a nonvolatile nanotube diode includes: a substrate; a semiconductor element disposed over the substrate, the semiconductor element having an anode and a cathode and capable of forming an electrically conductive pathway between the anode and the cathode; a nanotube switching element disposed over the semiconductor element, the nanotube switching element including a conductive contact and a nanotube fabric element capable of a plurality of resistance states; and a conductive terminal disposed in spaced relation to the conductive contact, wherein the nanotube fabric element is interposed between and in electrical communication with the conductive contact and the conductive contact is in electrical communication with the cathode, and wherein in response to electrical stimuli applied to the anode and the conductive terminal, the nonvolatile nanotube diode is capable of forming an electrically conductive pathway between the anode and the conductive terminal.

Abstract: A non-volatile latch circuit is provided. The non-volatile latch circuit includes a nanotube switching element capable of switching between resistance states and non-volatilely retaining the resistance state. The non-volatile latch circuit includes a volatile latch circuit is capable of receiving and volatilely storing a logic state. When the nanotube switching element is a resistance state, the volatile latch circuit retains a corresponding logic state and outputs that corresponding logic state at an output terminal. A non-volatile register file configuration circuit for use with a plurality of non-volatile register files is also provided. The non-volatile register file configuration circuit includes a selection circuitry and a plurality of nanotube fuse elements, each in electrical communication with one of a plurality of non-volatile register files.

Abstract: A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non-volatile nanotube switch that stores the corresponding state of the shadow device.