Abstract: Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos ?) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos ?) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos ? coil ring is disposed concentrically about the inner electromagnetic cos ? coil ring.

Abstract: A method of forming a layer of diamond-like carbon on a workpiece includes supporting the workpiece in a chamber with the workpiece facing an upper electrode, and forming a plurality of successive sublayers to form the layer of layer of diamond-like carbon by alternating between depositing a sublayer of diamond-like carbon on the workpiece in the chamber and treating the sublayer with a plasma of the inert gas or an electron beam from the upper electrode.

Abstract: A method of performing deposition of diamond-like carbon on a workpiece in a chamber includes supporting the workpiece in the chamber facing an upper electrode suspended from a ceiling of the chamber, introducing a hydrocarbon gas into the chamber, and applying first RF power at a first frequency to the upper electrode that generates a plasma in the chamber and produces a deposition of diamond-like carbon on the workpiece. Applying the RF power generates an electron beam from the upper electrode toward the workpiece to enhance ionization of the hydrocarbon gas.

Abstract: An electron beam plasma reactor includes a plasma chamber having a side wall, an upper electrode, a workpiece support to hold a workpiece facing the upper electrode with the workpiece on the support having a clear view of the upper electrode, a first RF power source coupled to said upper electrode, a gas supply, a vacuum pump coupled to the chamber to evacuate the chamber, and a controller. The controller is configured to operate the first RF power source to apply an RF power to upper electrode, and to operate the gas distributor and vacuum pump, so as to create a plasma in an upper portion of the chamber that generates an electron beam from the upper electrode toward the workpiece and a lower electron-temperature plasma in a lower portion of the chamber including the workpiece.

Abstract: A particle removal device including a particle removal sticker. The particle removal sticker including a top side and a bottom side. The bottom side of the particle removal sticker includes an adhesive configured to removably adhere to a screen of an electronic device. The particle removal device also includes a sticker release liner. The sticker release liner includes a top side removably attached to the bottom side of the particle removal sticker. The sticker release liner is configured to be removed from the bottom side of the particle removal sticker to expose the adhesive and to adhere the particle removal sticker to the screen. The particle removal sticker is configured to remove particles as the particle removal sticker is removed from the screen. Other embodiments are provided.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber and having a support surface to support a substrate; an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support; and a first inductive applicator ring coupled to a lift mechanism to position the first inductive applicator ring within the internal processing volume.

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

Abstract: A docking stand that includes a first surface including a connector well. The first surface can be configured to support a first side of an electronic device. The docking stand also can include a docking connector configured to be raised and lowered within the connector well and configured to removably attach to the electronic device. Other embodiments are provided.

Abstract: A particle removal device including a particle removal sticker. The particle removal sticker including a top side and a bottom side. The bottom side of the particle removal sticker includes an adhesive configured to removably adhere to a screen of an electronic device. The particle removal device also includes a sticker release liner. The sticker release liner includes a top side removably attached to the bottom side of the particle removal sticker. The sticker release liner is configured to be removed from the bottom side of the particle removal sticker to expose the adhesive and to adhere the particle removal sticker to the screen. The particle removal sticker is configured to remove particles as the particle removal sticker is removed from the screen. Other embodiments are provided.

Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and sputtered metal atoms are removed from the electron beam to reduce contamination.

Abstract: Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos ?) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos ?) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos ? coil ring is disposed concentrically about the inner electromagnetic cos ? coil ring.

Abstract: Spatial distribution of RF power delivered to plasma in a processing chamber is controlled using an arrangement of primary and secondary inductors, wherein the current through the secondary inductors affects the spatial distribution of the plasma. The secondary inductors are configured to resonate at respectively different frequencies. A first secondary inductor is selectively excited to resonance, during a first time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the first secondary inductor. A second secondary inductor is selectively excited to resonance, during a second time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the second secondary inductor. The secondary inductors are isolated from one another and terminated such that substantially all current that passes through them and into the plasma results from mutual inductance with a primary inductor.

Abstract: Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos ?) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos ?) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos ? coil ring is disposed concentrically about the inner electromagnetic cos ? coil ring.

Abstract: A plasma source consisting of an array of plasma point sources that controls generation of charged particles and radicals spatially and temporally over a user defined region.

Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber.

Abstract: A docking stand that includes a first surface including a connector well. The first surface can be configured to support a first side of an electronic device. The docking stand also can include a docking connector configured to be raised and lowered within the connector well and configured to removably attach to the electronic device. Other embodiments are provided.

Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber and having a support surface to support a substrate; an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support; and a first inductive applicator ring coupled to a lift mechanism to position the first inductive applicator ring within the internal processing volume.