Patents by Inventor Steven LeBoeuf
Steven LeBoeuf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080008855Abstract: A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1.Type: ApplicationFiled: January 9, 2007Publication date: January 10, 2008Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Publication number: 20080006844Abstract: A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.Type: ApplicationFiled: January 9, 2007Publication date: January 10, 2008Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Publication number: 20070228385Abstract: An edge-emitting light emitting diode (EELED) and methods are described. The EELED includes contact layer, a first carrier confinement layer coupled to the contact layer, an active region optically coupled to the first carrier confinement layer. The active region includes an aluminum gallium nitride based material. Further, the EELED includes a second carrier confinement layer coupled to the active region.Type: ApplicationFiled: April 3, 2006Publication date: October 4, 2007Inventors: XianAn Cao, Steven Leboeuf, Alexei Vertiatchikh
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Publication number: 20070158785Abstract: A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm?2, and is substantially free of tilt boundaries.Type: ApplicationFiled: November 13, 2006Publication date: July 12, 2007Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Publication number: 20070114557Abstract: A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).Type: ApplicationFiled: January 16, 2007Publication date: May 24, 2007Inventors: Bryan Shelton, Sebastien Libon, Hari Venugopalan, Ivan Eliashevich, Stanton Weaver, Chen-Lun Chen, Thomas Soules, Steven LeBoeuf, Stephen Arthur
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Publication number: 20070097366Abstract: Embodiments of the invention include a particle detection system that includes a light emitting source, a non-collimating reflector, a collimating reflector, and a detector. Light from the light emitting source is directed by the non-collimating reflector to an area through which a particle stream may be transmitted. Fluorescent light from the light striking particles is redirected to the collimating reflector and then on to the detector. Other embodiments include a single pump used to pull a pair of fluid flows through the detection system. Other embodiments include a plurality of light emitting sources whose light is directed to a particle stream by a single reflector. Other embodiments include a method for detecting particles.Type: ApplicationFiled: October 31, 2005Publication date: May 3, 2007Inventors: Steven LeBoeuf, Alexei Vertiatchikh, Stanton Weaver, Radislav Potyrailo, Xian-An Cao
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Publication number: 20070098029Abstract: A device for emission of electromagnetic radiation comprises a source of atomic particles and a collector disposed to receive atomic particles from the source. The collector comprises an emission medium, the medium comprising a crystal having a spatial dimension in the range from about 10 nanometers to about 50 micrometers, wherein the emission medium has the capability to generate opposing charge pairs upon absorption of atomic particles from the source and to emit electromagnetic radiation upon recombination of the pairs. The emission may be via spontaneous emission or, in certain embodiments, by stimulated emission. A laser assembly comprising this device, and methods for making the device are also presented herein.Type: ApplicationFiled: October 27, 2005Publication date: May 3, 2007Applicant: General Electric CompanyInventors: Steven LeBoeuf, Radislav Potyrailo, William Huber, Rui Chen, Todd Tolliver, Alexei Vertiatchikh
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Publication number: 20070086915Abstract: An apparatus includes an article and a detector. The article includes a substrate, a faceted structure disposed on the substrate, and a sensor layer disposed on the faceted structure. The faceted structure is disposed on the substrate first surface and itself has a surface. The faceted structure surface has peripheral edge defining a diameter of the faceted structure surface. The sensor layer is disposed on the faceted structure surface. The sensor layer can react or can interact with a target species when the target species is sufficiently proximate to the sensor layer. The sensor layer responds to the reaction or to the interaction in a detectable manner. The detector detects a response to the reaction, or to the interaction, of the target species with the sensor layer.Type: ApplicationFiled: June 30, 2006Publication date: April 19, 2007Applicant: General Electric CompanyInventors: Steven LeBoeuf, Peter Sandvik, Radislav Potyrailo
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Publication number: 20070086916Abstract: A faceted structure is provided that includes a crystalline composition comprising a metal nitride. The metal comprises one or more of aluminum, boron, indium, or gallium. The crystalline composition has at least one exposed surface that is a grain boundary, an etched surface, or a naturally formed facet, and the surface has the same crystallographic orientation of a substrate on which the crystalline composition is grown. A sensor device is provided that includes a faceted structure. Associated methods of making and using the faceted structure in a sensor device are provided.Type: ApplicationFiled: June 30, 2006Publication date: April 19, 2007Applicant: General Electric CompanyInventors: Steven LeBoeuf, Peter Sandvik, Radislav Potyrailo
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Publication number: 20070040181Abstract: A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.Type: ApplicationFiled: March 15, 2006Publication date: February 22, 2007Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Patent number: 7179670Abstract: A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).Type: GrantFiled: March 5, 2004Date of Patent: February 20, 2007Assignee: GELcore, LLCInventors: Bryan S. Shelton, Sebastien Libon, Hari S. Venugopalan, Ivan Eliashevich, Stanton E. Weaver, Jr., Chen-Lun Hsing Chen, Thomas F. Soules, Steven LeBoeuf, Stephen Arthur
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Publication number: 20070000330Abstract: A pressure sensor is provided. The pressure sensor includes a multi-layer laminate comprising a substrate and a semiconductor layer, wherein the substrate comprises single crystal or quasi-single crystal aluminum oxide, and a portion of the substrate that is spaced from a peripheral edge is wet etched to form an inwardly facing sidewall that defines a volume; and a substrate to which the multi-layer laminate is secured. The volume is an enclosed volume further defined by a substrate surface.Type: ApplicationFiled: September 6, 2006Publication date: January 4, 2007Applicant: General Electric CompanyInventors: Steven Tysoe, Mark D'Evelyn, Charles Becker, Abasifreke Ebong, Stephen Arthur, Steven LeBoeuf, Robert Wojnarowski, Samhita Dasgupta, Vinayak Tilak, Kanakasabapathi Subramanian, Jeffrey Fortin
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Publication number: 20060289386Abstract: An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (Na3AlF6), potassium tetrafluoro borate (KBF4), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.Type: ApplicationFiled: June 27, 2005Publication date: December 28, 2006Inventors: Steven Tysoe, Steven LeBoeuf, Mark D'Evelyn, Venkat Venkataramani, Vinayak Tilak, Jeffrey Fortin, Charles Becker, Stephen Arthur, Samhita Dasgupta, Kanakasabapathi Subramanian, Robert Wojnarowski, Abasifreke Ebong
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Publication number: 20060207647Abstract: The present invention is directed to photovoltaic devices comprising nanostructured materials, wherein such photovoltaic devices are comprised exclusively of inorganic components. Depending on the embodiment, such nanostructured materials are either 1-dimensional nanostructures or branched nanostructures, wherein such nanostructures are used to enhance the efficiency of the photovoltaic device, particularly for solar cell applications. Additionally, the present invention is also directed at methods of making and using such devices.Type: ApplicationFiled: March 16, 2005Publication date: September 21, 2006Inventors: Loucas Tsakalakos, Ji-Ung Lee, Charles Korman, Steven Leboeuf, Abasifreke Ebong, Robert Wojnarowski, Alok Srivastava, Oleg Sulima
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Patent number: 7098487Abstract: There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 104 cm?1, and having no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.Type: GrantFiled: December 27, 2002Date of Patent: August 29, 2006Assignee: General Electric CompanyInventors: Mark Philip D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Peter M. Sandvik
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Publication number: 20060169996Abstract: A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1.Type: ApplicationFiled: March 15, 2006Publication date: August 3, 2006Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Publication number: 20060137456Abstract: A sensor, in accordance with aspects of the present technique, is provided. The sensor comprises a membrane formed of gallium nitride. The membrane is disposed on a substrate, which is wet-etched to form a closed cavity. The membrane exhibits both a capacitive response and a piezo-response to an external stimulus. The sensor further includes a circuit for measuring at least one of the capacitive response or the piezo-response. In certain aspects, the sensor may be operable to measure external stimuli, such as, pressure, force and mechanical vibration.Type: ApplicationFiled: December 27, 2004Publication date: June 29, 2006Inventors: Samhita Dasgupta, Jeffrey Fortin, Steven LeBoeuf, Vinayak Tilak, Chayan Mitra, Kanakasabapathi Subramanian, Steven Tysoe
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Publication number: 20060118799Abstract: A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.Type: ApplicationFiled: December 6, 2005Publication date: June 8, 2006Applicant: General Electric CompanyInventors: Mark D'Evelyn, Xian-An Cao, Anping Zhang, Steven LeBoeuf, Huicong Hong, Dong-Sil Park, Kristi Narang
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Publication number: 20060071219Abstract: The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the base structure has a mesa configuration, which mesa configuration may be rounded on a boundary surface, or which may be non-rounded, such as a mesa having an upper boundary surface that is flat. In other words, the p-type metal resides upon a mesa formed out of the base structure materials. In a more specific embodiment, the UV-LED structure includes n-type metallization layer, passivation layers, and bond pads positioned at appropriate locations of the device. In a more specific embodiment, the p-type metal layer is encapsulated in the encapsulating layer.Type: ApplicationFiled: September 24, 2004Publication date: April 6, 2006Applicant: Lockheed Martin CorporationInventors: Robert Wojnarowski, Stanton Weaver, Abasifreke Ebong, Xian An Cao, Steven LeBoeuf, Larry Rowland, Stephen Arthur
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Publication number: 20050264172Abstract: The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED. In an embodiment of the invention, the UV-LED is characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the LED's are provided with a rounded mesa configuration. In a specific embodiment, the p-type metal is positioned upon a rounded mesa, such as a parabolic mesa, formed out of the base structure materials.Type: ApplicationFiled: May 26, 2004Publication date: December 1, 2005Applicant: Lockheed MartinInventors: Robert Wojnarowski, Stanton Weaver, Steven LeBoeuf