Abstract: A method of forming an opening through a substrate having a first side and a second side opposite the first side includes forming a trench in the first side of the substrate, forming a mask layer within the trench, filling the trench with a fill material, forming a first portion of the opening in the substrate from the second side of the substrate toward the mask layer, and forming a second portion of the opening in the substrate through the mask layer and the fill material, including communicating the second portion of the opening with the first portion of the opening and the first side of the substrate.

Abstract: A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.

Abstract: A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for depositing a first material on photosensitive material are described.

Abstract: The described embodiments relate to fluid-ejection devices and methods of forming same. One exemplary embodiment includes a plurality of fluid drop generators and associated electrically conductive paths, and at least one electron beam generation assembly configured to selectively direct at least one electron beam at individual electrically conductive paths sufficiently to cause fluid to be ejected from an associated fluid drop generator.

Abstract: A method of forming an opening through a substrate having a first side and a second side opposite the first side includes forming a trench in the first side of the substrate, forming a mask layer within the trench, filling the trench with a fill material, forming a first portion of the opening in the substrate from the second side of the substrate toward the mask layer, and forming a second portion of the opening in the substrate through the mask layer and the fill material, including communicating the second portion of the opening with the first portion of the opening and the first side of the substrate.

Abstract: A method of forming an opening through a substrate having a first side and a second side opposite the first side includes forming a trench in the first side of the substrate, forming a mask layer within the trench, filling the trench with a fill material, forming a first portion of the opening in the substrate from the second side of the substrate toward the mask layer, and forming a second portion of the opening in the substrate through the mask layer and the fill material, including communicating the second portion of the opening with the first portion of the opening and the first side of the substrate.

Abstract: A method of forming an opening through a substrate having a first side and a second side opposite the first side includes forming spaced stops in the first side of the substrate, partially forming a first portion of the opening in the substrate from the second side by a first process, further forming the first portion of the opening in the substrate from the second side by a second process, including forming the first portion of the opening to the spaced stops, and forming a second portion of the opening in the substrate from the first side, including forming the second portion of the opening between the spaced stops.

Abstract: An emission device includes a plurality of electron emitter structures of varied geometry that have a conducting layer deposited thereon. The conducting layer has openings located at tunneling sites for each of the electron emitter structures. The tunneling sites facilitate electron emissions from each of the varied geometry electron emitter structures upon voltage biasing of the conducting layer relative to the electron emitter structures.

Abstract: A method of forming an opening through a substrate having a first side and a second side opposite the first side includes forming a trench in the first side of the substrate, forming a mask layer within the trench, filling the trench with a fill material, forming a first portion of the opening in the substrate from the second side of the substrate toward the mask layer, and forming a second portion of the opening in the substrate through the mask layer and the fill material, including communicating the second portion of the opening with the first portion of the opening and the first side of the substrate.

Abstract: An emission device includes a plurality of electron emitter structures of varied geometry that have a conducting layer deposited thereon. The conducting layer has openings located at tunneling sites for each of the electron emitter structures. The tunneling sites facilitate electron emissions from each of the varied geometry electron emitter structures upon voltage biasing of the conducting layer relative to the electron emitter structures.