Patents by Inventor Steven Lippy
Steven Lippy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978622Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.Type: GrantFiled: June 24, 2015Date of Patent: May 7, 2024Assignee: ENTEGRIS, INC.Inventors: Lingyan Song, Steven Lippy, Emanuel I. Cooper
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Patent number: 11476158Abstract: A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200° C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.Type: GrantFiled: September 3, 2015Date of Patent: October 18, 2022Assignee: ENTEGRIS, INC.Inventors: Philip S. H. Chen, William Hunks, Steven Lippy, Ruben Remco Lieten
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Patent number: 11346008Abstract: The invention provides compositions useful for selectively etching ruthenium and/or copper. The compositions comprise certain periodate compounds, alkylammonium or alkylphosphonium hydroxides, carbonate or bicarbonate buffers, and water, wherein the pH of the composition is about 9 to about 12.5. The compositions of the invention are effectively utilized in the method of the invention and have been found to be capable of etching Cu and Ru at similar rates, i.e., >20 ?/min, while minimizing etch rates of dielectrics (<2 ?/min).Type: GrantFiled: November 22, 2019Date of Patent: May 31, 2022Assignee: ENTEGRIS, INC.Inventors: Steven Lippy, Emanuel I. Cooper
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Patent number: 10920141Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.Type: GrantFiled: June 6, 2014Date of Patent: February 16, 2021Assignee: ENTEGRIS, INC.Inventors: Li-Min Chen, Steven Lippy, Emanuel I Cooper, Lingyan Song
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Patent number: 10472567Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.Type: GrantFiled: March 4, 2014Date of Patent: November 12, 2019Assignee: ENTEGRIS, INC.Inventors: Li-Min Chen, Emanuel I. Cooper, Steven Lippy, Lingyan Song, Chia-Jung Hsu, Sheng-Hung Tu, Chieh Ju Wang
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Patent number: 10460954Abstract: A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.Type: GrantFiled: June 2, 2015Date of Patent: October 29, 2019Assignee: ENTEGRIS, INC.Inventors: Emanuel I. Cooper, Steven Lippy, Lingyan Song
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Patent number: 10428271Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.Type: GrantFiled: August 28, 2014Date of Patent: October 1, 2019Assignee: Entegris, Inc.Inventors: Emanuel I. Cooper, Li-Min Chen, Steven Lippy, Chia-Jung Hsu, Sheng-hung Tu, Chieh Ju Wang
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Patent number: 10392560Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.Type: GrantFiled: January 17, 2017Date of Patent: August 27, 2019Assignee: ENTEGRIS, INC.Inventors: Jeffrey A. Barnes, Emanuel I. Cooper, Li-Min Chen, Steven Lippy, Rekha Rajaram, Sheng-Hung Tu
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Patent number: 10138117Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.Type: GrantFiled: July 31, 2014Date of Patent: November 27, 2018Assignee: Entegris, Inc.Inventors: Li-Min Chen, Steven Lippy, Daniela White, Emanuel I. Cooper
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Publication number: 20180130706Abstract: A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200° C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.Type: ApplicationFiled: September 3, 2015Publication date: May 10, 2018Applicant: Entegris, Inc.Inventors: Philip S.H. Chen, William Hunks, Steven Lippy, Ruben Remco Lieten
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Patent number: 9831088Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.Type: GrantFiled: October 6, 2011Date of Patent: November 28, 2017Assignee: ENTEGRIS, INC.Inventors: Tianniu Chen, Nicole E. Thomas, Steven Lippy, Jeffrey A. Barnes, Emanuel I. Cooper, Peng Zhang
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Patent number: 9546321Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.Type: GrantFiled: December 27, 2012Date of Patent: January 17, 2017Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey A. Barnes, Emanuel I. Cooper, Li-Min Chen, Steven Lippy, Rekha Rajaram, Sheng-Hung Tu
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Publication number: 20150307818Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.Type: ApplicationFiled: June 22, 2015Publication date: October 29, 2015Inventors: Jeffrey A. Barnes, Steven Lippy, Peng Zhang, Rekha Rajaram
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Patent number: 9063431Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.Type: GrantFiled: July 15, 2011Date of Patent: June 23, 2015Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey A. Barnes, Steven Lippy, Peng Zhang, Rekha Rajaram
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Publication number: 20150027978Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.Type: ApplicationFiled: December 27, 2012Publication date: January 29, 2015Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey A. Barnes, Emanuel I. Cooper, Li-Min Chen, Steven Lippy, Rekha Rajaram, Sheng-Hung Tu
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Publication number: 20140038420Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.Type: ApplicationFiled: October 6, 2011Publication date: February 6, 2014Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Tianniu Chen, Nicole E. Thomas, Steven Lippy, Jeffrey A. Barnes, Emanuel I. Cooper, Peng Zhang
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Publication number: 20130296214Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.Type: ApplicationFiled: July 15, 2011Publication date: November 7, 2013Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey A. Barnes, Steven Lippy, Peng Zhang, Rekha Rajaram
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Patent number: 6267998Abstract: A fully baked or fried multi-layered toaster product comprises a first layer and a second layer wherein the first and second layers are constructed of dissimilar materials. The first layer provides the structural properties required for a toaster product while the second layer provides enhanced characteristics such as taste, texture, and other organoleptic properties. The multi-layered toaster product contains dissimilar dough or batter types and can further include filling and/or particulates and/or toppings.Type: GrantFiled: April 2, 1999Date of Patent: July 31, 2001Assignees: Kellogg Company of W. K. Kellogg Institute, Keebler CompanyInventors: Michael Bauman, Mark Steven Lippi, Nancy Ann Esterline, Rosemary Julia Sikora, Glenn Roy Quinlan, Hillis O. Kauffman, Harold G. Gobble