Abstract: An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.

Abstract: An electron emission device with nano-protrusions is described. Electrons are emitted from the nano-protrusions and directed by one or more conductors into beams. The beams may be shaped to be collimated, diverged, or converged. The shaped beams from one or more nano-protrusions may be focused onto a target spot through the use of additional electron optics.

Abstract: In an electron emitter based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate and an electron supply layer formed on the conductive substrate. The electron supply layer, for example undoped polysilicon, has protrusions formed on its surface. The sharpness and density of protrusions may be controlled. Above the electron supply layer and the protrusions, an insulator may be formed thereby enclosing the protrusions. A top conductive layer may be formed above the insulator. The enclosed protrusions are relatively insensitive to vacuum contamination. The thinness of the insulator allows high intensity electric fields at the protrusions to be generated with low applied voltage. Field-enhanced injection of electrons into the insulator and thence through the top conductive layer results. Furthermore, electron beam dispersion and divergence are minimized.

Abstract: An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.

Abstract: An electron emission device with nano-protrusions is described. Electrons are emitted from the nano-protrusions and directed by one or more conductors into beams. The beams may be shaped to be collimated, diverged, or converged. The shaped beams from one or more nano-protrusions may be focused onto a target spot through the use of additional electron optics.

Abstract: A redundant array of independent storage devices is disclosed herein. The redundant storage device includes one or more atomic resolution storage devices and a control system. The atomic resolution storage device is configured to communicate with the control system as a redundant array of independent storage devices. Each atomic resolution storage device is a non-volatile memory component including a plurality of electron emitters, a medium having medium partitions, and a plurality of micromovers wherein each micromover is independently operable to move a medium partition relative to one or more electron emitters for redundant reading and writing of data at the media.

Abstract: In an electron emitter based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate and an electron supply layer formed on the conductive substrate. The electron supply layer, for example undoped polysilicon, has protrusions formed on its surface. The sharpness and density of protrusions may be controlled. Above the electron supply layer and the protrusions, an insulator may be formed thereby enclosing the protrusions. A top conductive layer may be formed above the insulator. The enclosed protrusions are relatively insensitive to vacuum contamination. The thinness of the insulator allows high intensity electric fields at the protrusions to be generated with low applied voltage. Field-enhanced injection of electrons into the insulator and thence through the top conductive layer results. Furthermore, electron beam dispersion and divergence are minimized.

Abstract: A redundant array of independent storage devices is disclosed herein. The redundant storage device includes one or more an atomic resolution storage devices and a control system. The atomic resolution storage device is configured to communicate with the control system as a redundant array of independent storage devices. Each atomic resolution storage device is a non-volatile memory component including a plurality of electron emitters, a medium having medium partitions, and a plurality of micromovers wherein each micromover is independently operable to move a medium partition relative to one or more electron emitters for redundant reading and writing of data at the media.

Abstract: An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.