Abstract: Numerous examples for performing tuning of a page or a word of non-volatile memory cells in an analog neural memory are disclosed. In one example, an analog neural memory system comprises an array of non-volatile memory cells arranged into rows and columns, each non-volatile memory cell comprising a word line terminal, a bit line terminal, and an erase gate terminal; a plurality of word lines, each word line coupled to word line terminals of a row of non-volatile memory cells; a plurality of bit lines, each bit line coupled to bit line terminals of a column of non-volatile memory cells; and a plurality of erase gate enable transistors, each erase gate enable transistor coupled to erase gate terminals of a word of non-volatile memory cells.

Abstract: Techniques are disclosed for segmenting users based on user interactions with messages transmitted over various electronic communication channels. In some embodiments, a segmentation application normalizes sets of event data associated with user interactions with messages that are transmitted over multiple electronic communication channels to generate intermediate labels associated with the sets of event data. The normalization includes applying a time decay while accounting for messaging cadence, messaging volume, and user interactions with messages associated with an industry. The intermediate labels are combined to generate a final label associated with the user via a pairwise combination technique that maintains a more favorable label when a pair of intermediate labels are combined. Additional messages can then be generated and/or transmitted based on the final label.

Abstract: A process and system for heating semiconductor substrates in a processing chamber on a susceptor as disclosed. In accordance with the present invention, the susceptor includes a support structure made from a material having a relatively low thermal conductivity for suspending the wafer over the susceptor. The support structure has a particular height that inhibits or prevents radial temperature gradients from forming in the wafer during high temperature processing. If needed, recesses can be formed in the susceptor for locating and positioning a support structure. The susceptor can include a wafer supporting surface defining a pocket that has a shape configured to conform to the shape of a wafer during a heat cycle.

Abstract: A process and system for heating semiconductor substrates in a processing chamber on a susceptor as disclosed. In accordance with the present invention, the susceptor includes a support structure made from a material having a relatively low thermal conductivity for suspending the wafer over the susceptor. The support structure has a particular height that inhibits or prevents radial temperature gradients from forming in the wafer during high temperature processing. If needed, recesses can be formed in the susceptor for locating and positioning a support structure. The susceptor can include a wafer supporting surface defining a pocket that has a shape configured to conform to the shape of a wafer during a heat cycle.