Abstract: An integrated circuit 2 is provided with a clamp transistor 20 for providing electrostatic discharge event protection. A detector circuit 28 produces a clamp control signal for switching the clamp transistor 20 to a conductive state so as to provide the electrostatic discharge protection. The detector circuit 28 also generates an electrostatic discharge event signal 36 which is distributed elsewhere within the integrated circuit 2 and controls a protection circuit element 60, 64, 44 to force a processing control signal 40, 52 of a signal processing transistor 38, 54 into a state in which the signal processing transistor 38, 54 is more resistant to electrostatic discharge damage. The signal processing transistors 38, 54 may be P-type field effect transistors associated with a receiver 14 or a transmitter 12 connected to an external signal communication line.