Abstract: An RF power amplifier includes a first amplifier module comprising a first push-pull amplifier including a first plurality of field effect transistors and a first output transformer. An output impedance of the first amplifier module is 25 ohms. A second amplifier module includes a second push-pull amplifier including a second plurality of field effect transistors and a second output transformer. An output impedance of the second amplifier module is 25 ohms. A combiner is connected to the first amplifier module and the second amplifier module. The combiner combines an output from the first amplifier module and an output from the second amplifier module into a combined signal. An output impedance of the combiner is 50 ohms.

Abstract: An RF power amplifier includes a first amplifier module comprising a first push-pull amplifier including a first plurality of field effect transistors and a first output transformer. An output impedance of the first amplifier module is 25 ohms. A second amplifier module includes a second push-pull amplifier including a second plurality of field effect transistors and a second output transformer. An output impedance of the second amplifier module is 25 ohms. A combiner is connected to the first amplifier module and the second amplifier module. The combiner combines an output from the first amplifier module and an output from the second amplifier module into a combined signal. An output impedance of the combiner is 50 ohms.

Abstract: An RF power amplifier includes a push-pull amplifier having field effect transistors. Temperature compensating bias circuitry provides a temperature compensated bias voltage to the transistors for decreasing the bias voltage thereof as temperature increases. The temperature compensating bias circuitry includes a temperature sensor generating a temperature signal. A first amplifier provides a first temperature dependent voltage based on the temperature signal. A second amplifier provides a second temperature dependent voltage based on the temperature signal. The first and second temperature dependent voltages change at substantially the same rate in response to the temperature signal. A potentiometer receives the first and second temperature dependent voltages such that a voltage across the potentiometer remains substantially constant when the first and second temperature dependent voltages change.

Abstract: An RF power amplifier includes a push-pull amplifier having field effect transistors. Temperature compensating bias circuitry provides a temperature compensated bias voltage to the transistors for decreasing the bias voltage thereof as temperature increases. The temperature compensating bias circuitry includes a temperature sensor generating a temperature signal. A first amplifier provides a first temperature dependent voltage based on the temperature signal. A second amplifier provides a second temperature dependent voltage based on the temperature signal. The first and second temperature dependent voltages change at substantially the same rate in response to the temperature signal. A potentiometer receives the first and second temperature dependent voltages such that a voltage across the potentiometer remains substantially constant when the first and second temperature dependent voltages change.

Abstract: An RF power amplifier includes first and second field effect transistors having a gate, a source, and a drain, having an output power rating of at least 200 watts, and operating with a drain-to-source voltage that is greater than 50 VDC. The transistors are configured as a push-pull amplifier. The amplifier further includes an RF signal input. A input transformer is connected to the RF signal input. The input transformer has respective balanced outputs connected to the gates of the transistors. A broadband output transformer has a first balanced input connected to the drain of one the transistors, and a second balanced input connected to the drain of the other transistor. The broadband output transformer has an input to output impedance ratio of 1:4.

Abstract: An RF power amplifier includes first and second field effect transistors having a gate, a source, and a drain, having an output power rating of at least 200 watts, and operating with a drain-to-source voltage that is greater than 50 VDC. The transistors are configured as a push-pull amplifier. The amplifier further includes an RF signal input. A input transformer is connected to the RF signal input. The input transformer has respective balanced outputs connected to the gates of the transistors. A broadband output transformer has a first balanced input connected to the drain of one the transistors, and a second balanced input connected to the drain of the other transistor. The broadband output transformer has an input to output impedance ratio of 1:4.

Abstract: A heating panel has a resistive heating layer formed on a substrate. Insulating layers can be formed on the substrate. The heating layer has electrodes on opposite edges connected to different phases of a multiphase power source. Capacitive currents caused in the substrate by the different phases cancel each other. Thus, leakage current is minimized through a conductor connected between the substrate and ground. The heating panel can be adapted for two phase or three phase systems. The heating panels are particularly useful for defining a heating cavity of an oven or pots on a cook top.

Abstract: A heating panel has a substrate with a resistive heating material disposed thereon. The substrate can be metal with an insulating layer disposed between the substrate and the heating layer. Alternatively, the substrate can be glass ceramic. The heating layer has electrodes on opposite edges connected to different phases of a multiphase power source. Another electrode on the heating layer can be connected to a neutral of the power source. Capacitive currents caused in the substrate or a metal object on the substrate by the different phases cancel each other. Thus, leakage current through a conductor connected between the substrate and ground is minimized. The heating panel can be adapted for two phase or three phase systems. Power to the panels is controlled by solid state switches or relays. Zero crossing drivers sense supply voltages and operate the switches to balance currents in the panels.

Abstract: A heating panel has a metal substrate, ceramic inner and outer insulating layers on the substrate. A film of resistive material forms a heating layer on one of the insulating layers. The heating layer has electrodes on opposite edges connected to different phases of a multiphase power source. Another electrode is connected to a neutral of the power source. Capacitive currents caused in the substrate by the different phases cancel each other. Thus, leakage current is minimized through a conductor connected between the substrate and ground. The heating panel can be adapted for two phase or three phase systems. The heating panels are particularly useful for defining a heating cavity of an oven.