Patents by Inventor Steven M. Etter
Steven M. Etter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948933Abstract: In an example, a semiconductor device includes a first steering diode and a second steering diode at a top side of a region of semiconductor material, a first Zener diode buried within the region of semiconductor material, and a second Zener diode at a bottom side of the region of semiconductor material. The semiconductor device is configured as a bi-directional electrostatic discharge (ESD) structure. The first Zener diode and the first steering diodes are configured to respond to a positive ESD pulse, and the second Zener diode and the second steering diode are configured to respond to a negative ESD pulse. The steering diodes are configured to have low capacitances and the Zener diodes are configured to provide enhanced ESD protection. Other related examples and methods are disclosed herein.Type: GrantFiled: February 9, 2022Date of Patent: April 2, 2024Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Steven M. Etter, Yupeng Chen
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Publication number: 20230253397Abstract: In an example, a semiconductor device includes a first steering diode and a second steering diode at a top side of a region of semiconductor material, a first Zener diode buried within the region of semiconductor material, and a second Zener diode at a bottom side of the region of semiconductor material. The semiconductor device is configured as a bi-directional electrostatic discharge (ESD) structure. The first Zener diode and the first steering diodes are configured to respond to a positive ESD pulse, and the second Zener diode and the second steering diode are configured to respond to a negative ESD pulse. The steering diodes are configured to have low capacitances and the Zener diodes are configured to provide enhanced ESD protection. Other related examples and methods are disclosed herein.Type: ApplicationFiled: February 9, 2022Publication date: August 10, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Steven M. ETTER, Yupeng CHEN
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Patent number: 11056480Abstract: In one embodiment, a TVS semiconductor device includes a P-N diode that is connected in parallel with a bipolar transistor wherein a breakdown voltage of the bipolar transistor is less than a breakdown voltage of the P-N diode.Type: GrantFiled: December 5, 2019Date of Patent: July 6, 2021Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Yupeng Chen, Steven M. Etter, Umesh Sharma
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Patent number: 10833154Abstract: An electronic device can include a substrate and an insulating structure. In an aspect, an anchor can include a portion of the substrate that extends into the insulating structure or a portion of the insulating structure that extends into the substrate. In another aspect, a process of forming an electronic device can include patterning a substrate to define a trench and a first anchor; and forming an insulating structure within the trench and adjacent to the first anchor. In a further aspect, a process of forming an electronic device can include patterning a substrate to define a trench having a sidewall and a first pillar spaced apart from the sidewall; doping the first pillar to change a conductivity type of the first pillar; and forming an insulating structure that surrounds the first pillar.Type: GrantFiled: September 18, 2018Date of Patent: November 10, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Gordon M. Grivna, Steven M. Etter, Hiroyuki Suzuki, Miki Ichiyanagi, Toshihiro Hachiyanagi
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Publication number: 20200111777Abstract: In one embodiment, a TVS semiconductor device includes a P-N diode that is connected in parallel with a bipolar transistor wherein a breakdown voltage of the bipolar transistor is less than a breakdown voltage of the P-N diode.Type: ApplicationFiled: December 5, 2019Publication date: April 9, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Yupeng CHEN, Steven M. ETTER, Umesh SHARMA
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Patent number: 10535648Abstract: In one embodiment, a TVS semiconductor device includes a P-N diode that is connected in parallel with a bipolar transistor wherein a breakdown voltage of the bipolar transistor is less than a breakdown voltage of the P-N diode.Type: GrantFiled: August 23, 2017Date of Patent: January 14, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Yupeng Chen, Steven M. Etter, Umesh Sharma
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Publication number: 20190067269Abstract: In one embodiment, a TVS semiconductor device includes a P-N diode that is connected in parallel with a bipolar transistor wherein a breakdown voltage of the bipolar transistor is less than a breakdown voltage of the P-N diode.Type: ApplicationFiled: August 23, 2017Publication date: February 28, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Yupeng CHEN, Steven M. ETTER, Umesh SHARMA
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Patent number: 10217733Abstract: An ultra-low capacitance ESD protection device with an ultra-fast response time and a low turn-on voltage, and a high holding current. The device may include: a heavily-doped p-type substrate; a lightly-doped n-type epitaxial layer with a heavily-doped n-type buried layer; and a semiconductor-controlled rectifier (SCR) structure within the epitaxial layer. The SCR structure includes, between a ground terminal and a pad terminal: a shallow P+ region within a moderately-doped n-type well to form an emitter-base junction of a trigger transistor; a shallow N+ region within a moderately-doped p-type well to form an emitter-base junction of a latching transistor, and a PN junction coupled to either of the shallow regions as a forward-biased series diode. To reduce capacitance, the n-type and p-type wells are separated by a lightly-doped portion of the epitaxial layer having a small lateral dimension for enhanced switching speed.Type: GrantFiled: August 30, 2016Date of Patent: February 26, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: David D. Marreiro, Yupeng Chen, Steven M. Etter, Umesh Sharma
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Publication number: 20190035886Abstract: An electronic device can include a substrate and an insulating structure. In an aspect, an anchor can include a portion of the substrate that extends into the insulating structure or a portion of the insulating structure that extends into the substrate. In another aspect, a process of forming an electronic device can include patterning a substrate to define a trench and a first anchor; and forming an insulating structure within the trench and adjacent to the first anchor. In a further aspect, a process of forming an electronic device can include patterning a substrate to define a trench having a sidewall and a first pillar spaced apart from the sidewall; doping the first pillar to change a conductivity type of the first pillar; and forming an insulating structure that surrounds the first pillar.Type: ApplicationFiled: September 18, 2018Publication date: January 31, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Gordon M. GRIVNA, Steven M. ETTER, Hiroyuki SUZUKI, Miki ICHIYANAGI, Toshihiro HACHIYANAGI
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Publication number: 20170077082Abstract: An ultra-low capacitance ESD protection device with an ultra-fast response time and a low turn-on voltage, and a high holding current. The device may include: a heavily-doped p-type substrate; a lightly-doped n-type epitaxial layer with a heavily-doped n-type buried layer; and a semiconductor-controlled rectifier (SCR) structure within the epitaxial layer. The SCR structure includes, between a ground terminal and a pad terminal: a shallow P+ region within a moderately-doped n-type well to form an emitter-base junction of a trigger transistor; a shallow N+ region within a moderately-doped p-type well to form an emitter-base junction of a latching transistor, and a PN junction coupled to either of the shallow regions as a forward-biased series diode. To reduce capacitance, the n-type and p-type wells are separated by a lightly-doped portion of the epitaxial layer having a small lateral dimension for enhanced switching speed.Type: ApplicationFiled: August 30, 2016Publication date: March 16, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: David D. MARREIRO, Yupeng CHEN, Steven M. ETTER, Umesh SHARMA
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Patent number: 8723264Abstract: In one embodiment, electrostatic discharge (ESD) devices are disclosed.Type: GrantFiled: October 17, 2012Date of Patent: May 13, 2014Assignee: Semicondutor Components Industries, LLCInventors: David D. Marreiro, Steven M. Etter, Sudhama C. Shastri
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Publication number: 20140103484Abstract: In one embodiment, electrostatic discharge (ESD) devices are disclosed.Type: ApplicationFiled: October 17, 2012Publication date: April 17, 2014Inventors: David D. Marreiro, Steven M. Etter, Sudhama C. Shastri
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Patent number: 8188572Abstract: In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.Type: GrantFiled: April 26, 2011Date of Patent: May 29, 2012Assignee: Semiconductor Components Industries, LLCInventors: Steven M. Etter, Mingjiao Liu, Ali Salih, David D. Marreiro, Sudhama C. Shastri
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Publication number: 20110198728Abstract: In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.Type: ApplicationFiled: April 26, 2011Publication date: August 18, 2011Inventors: Steven M. Etter, Mingjiao Liu, Ali Salih, David D. Marreiro, Sudhama C. Shastri
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Patent number: 7955941Abstract: In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.Type: GrantFiled: September 11, 2008Date of Patent: June 7, 2011Assignee: Semiconductor Components Industries, LLCInventors: Steven M. Etter, Mingjiao Liu, Ali Salih, David D. Marreiro, Sudhama C. Shastri
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Publication number: 20100060349Abstract: In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.Type: ApplicationFiled: September 11, 2008Publication date: March 11, 2010Inventors: Steven M. Etter, Mingjiao Liu, Ali Salih, David D. Marreiro, Sudhama C. Shastri