Abstract: Power semiconductor device structures and assemblies with improved heat dissipation characteristics and low impedance interconnections include a thermally-conductive dielectric layer, such as diamondlike carbon (DLC) overlying at least portions of the active major surface of a semiconductor chip, with vias formed in the dielectric layer in alignment with contact pads on the active major surface. A patterned metallization layer is formed over the thermally-conductive dielectric layer, with portions of the metallization layer extending through the vias into electrical contact with the chip contact pads. A metal structure is electrically and thermally coupled to selected areas of the patterned metallization, such as by solder bonding or by a eutectic bonding process. In different embodiments, the metal structure may comprise a metal conductor bonded to the opposite major surface of another power semiconductor device structure, a heat-dissipating device-mounting structure, or simply a low-impedance lead.

Abstract: The steady state operating parameters of a low pressure cyclic hot-filament chemical vapor deposition process for making diamond, i.e., nucleation-growth and graphite removal, are applied as controlled sequential steps to favor nucleation and growth.

Abstract: A process for shaping a thin, free-standing diamond film having a rough growth surface. The process includes the steps of: cutting the rough growth surface of said film with a laser to form a plurality of first ridges; translating said film in a direction parallel to said surface or rotating said film along an axis of rotation perpendicular to said surface; repeating said cutting to form a plurality of second ridges; and lapping said growth surface to reduce the height of said second ridges. The laser utilized may be a Nd:YAG laser and may be continuous or pulsed.

Abstract: The steady state operating parameters of a low pressure chemical vapor deposition process for making diamond, i.e., nucleation-growth and graphite removal, are applied as controlled sequential steps to favor nucleation and growth.

Abstract: An improved method and apparatus are disclosed for producing large area diamond depositions. A mixture of a carbon compound such as methane, hydrogen and argon is introduced into a DC arc plasma torch to form a plasma jet. The plasma jet is directed and trapped into a partially enclosed chemical vapor deposition zone confined within a reaction chamber of a CVD process. The chemical vapor deposition zone is formed by walls wherein at least one such wall is a rotating substrate cooled to a set temperature. The plasma jet containing radicalized hydrogen and a carbon compound is impinged on the rotating substrate to produce large area diamond layer.

Abstract: The steady state operating parameters of a low pressure chemical vapor deposition process for making diamond, i.e., nucleation-growth and graphite removal, are applied as controlled sequential steps to favor nucleation and growth.