Patents by Inventor Steven M. Gorbatkin

Steven M. Gorbatkin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5032202
    Abstract: A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm.sup.2. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity.
    Type: Grant
    Filed: October 3, 1989
    Date of Patent: July 16, 1991
    Assignee: Martin Marietta Energy Systems, Inc.
    Inventors: Chin-Chi Tsai, Steven M. Gorbatkin, Lee A. Berry