Patents by Inventor Steven M. Hughes
Steven M. Hughes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11495703Abstract: The light conversion efficiency of a solar cell is enhanced by using an optical downshifting layer in cooperation with a photovoltaic material. The optical downshifting layer converts photons having wavelengths in a supplemental light absorption spectrum into photons having a wavelength in the primary light absorption spectrum of the photovoltaic materiaL The cost effectiveness and efficiency of solar cells platforms can be increased by relaxing the range of the primary light absorption spectrum of the photovoltaic materiaL The optical downshifting layer can be applied as a low cost solution processed film composed of highly absorbing and emissive quantum dot heterostructure nanomaterial embedded in an inert matrix to improve the short wavelength response to the photovoltaic materiaL The enhanced efficiency provided by the optical downshifting layer permits advantageous modifications to the solar cell platform that enhances its efficiency as well.Type: GrantFiled: September 28, 2020Date of Patent: November 8, 2022Assignee: OSRAM Opto Semiconductors GmbHInventors: Juanita N. Kurtin, Steven M. Hughes, Alex C. Mayer, Oun-Ho Park, Georgeta Masson
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Publication number: 20220085254Abstract: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.Type: ApplicationFiled: November 10, 2021Publication date: March 17, 2022Inventors: Juanita Kurtin, Brian Theobald, Matthew J. Carillo, Oun-Ho Park, Georgeta Masson, Steven M. Hughes
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Patent number: 11205741Abstract: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.Type: GrantFiled: August 1, 2018Date of Patent: December 21, 2021Assignee: OSRAM Opto Semiconductors GmbHInventors: Juanita Kurtin, Brian Theobald, Matthew J. Carillo, Oun-Ho Park, Georgeta Masson, Steven M. Hughes
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Publication number: 20210242358Abstract: The light conversion efficiency of a solar cell (10) is enhanced by using an optical downshifting layer (30) in cooperation with a photovoltaic material (22). The optical downshifting layer converts photons (50) having wavelengths in a supplemental light absorption spectrum into photons (52) having a wavelength in the primary light absorption spectrum of the photovoltaic material. The cost effectiveness and efficiency of solar cells platforms (20) can be increased by relaxing the range of the primary light absorption spectrum of the photovoltaic material. The optical downshifting layer can be applied as a low cost solution processed film composed of highly absorbing and emissive quantum dot heterostructure nanomaterial embedded in an inert matrix to improve the short wavelength response of the photovoltaic material. The enhanced efficiency provided by the optical downshifting layer permits advantageous modifications to the solar cell platform that enhances its efficiency as well.Type: ApplicationFiled: September 28, 2020Publication date: August 5, 2021Applicant: OSRAM Opto Semiconductors GmbHInventors: Juanita N. Kurtin, Steven M. Hughes, Alex C. Mayer, Oun-Ho Park, Georgeta Masson
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Patent number: 10840403Abstract: The light conversion efficiency of a solar cell (10) is enhanced by using an optical downshifting layer (30) in cooperation with a photovoltaic material (22). The optical downshifting layer converts photons (50) having wavelengths in a supplemental light absorption spectrum into photons (52) having a wavelength in the primary light absorption spectrum of the photovoltaic material. The cost effectiveness and efficiency of solar cells platforms (20) can be increased by relaxing the range of the primary light absorption spectrum of the photovoltaic material. The optical downshifting layer can be applied as a low cost solution processed film composed of highly absorbing and emissive quantum dot heterostructure nanomaterial embedded in an inert matrix to improve the short wavelength response of the photovoltaic material. The enhanced efficiency provided by the optical downshifting layer permits advantageous modifications to the solar cell platform that enhances its efficiency as well.Type: GrantFiled: September 21, 2017Date of Patent: November 17, 2020Assignee: OSRAM Opto Semiconductors GmbHInventors: Juanita N. Kurtin, Steven M. Hughes, Alex C. Mayer, Oun Ho Park, Georgeta Masson
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Patent number: 10396228Abstract: A solar concentrator module (80) employs a luminescent concentrator material (82) between photovoltaic cells (86) having their charge-carrier separation junctions (90) parallel to front surfaces (88) of photovoltaic material 84 of the photovoltaic cells (86). Intercell areas (78) covered by the luminescent concentrator material (82) occupy from 2 to 50% of the total surface area of the solar concentrator modules (80). The luminescent concentrator material (82) preferably employs quantum dot heterostructures, and the photovoltaic cells (86) preferably employ low-cost high-efficiency photovoltaic materials (84), such as silicon-based photovoltaic materials.Type: GrantFiled: December 5, 2016Date of Patent: August 27, 2019Assignee: OSRAM Opto Semiconductors GmbHInventors: Alex C. Mayer, Shawn R. Scully, Juanita N. Kurtin, Alex R. Guichard, Steven M. Hughes, Oun-Ho Park, Paul-Emile B. Trudeau, Colin C. Reese, Manav Sheoran, Georgeta Masson
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Publication number: 20180342652Abstract: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.Type: ApplicationFiled: August 1, 2018Publication date: November 29, 2018Inventors: Juanita Kurtin, Brian Theobald, Matthew J. Carillo, Oun-Ho Park, Georgeta Masson, Steven M. Hughes
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Patent number: 10074780Abstract: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.Type: GrantFiled: January 22, 2016Date of Patent: September 11, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Juanita Kurtin, Brian Theobald, Matthew J. Carillo, Oun-Ho Park, Georgeta Masson, Steven M. Hughes
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Publication number: 20180138340Abstract: The light conversion efficiency of a solar cell (10) is enhanced by using an optical downshifting layer (30) in cooperation with a photovoltaic material (22). The optical downshifting layer converts photons (50) having wavelengths in a supplemental light absorption spectrum into photons (52) having a wavelength in the primary light absorption spectrum of the photovoltaic material. The cost effectiveness and efficiency of solar cells platforms (20) can be increased by relaxing the range of the primary light absorption spectrum of the photovoltaic material. The optical downshifting layer can be applied as a low cost solution processed film composed of highly absorbing and emissive quantum dot heterostructure nanomaterial embedded in an inert matrix to improve the short wavelength response of the photovoltaic material. The enhanced efficiency provided by the optical downshifting layer permits advantageous modifications to the solar cell platform that enhances its efficiency as well.Type: ApplicationFiled: September 21, 2017Publication date: May 17, 2018Inventors: Juanita N. Kurtin, Steven M. Hughes, Alex C. Mayer, Oun Ho Park, Georgeta Masson
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Patent number: 9793446Abstract: Composites having semiconductor structures embedded in a matrix are described. In an example, a composite includes a matrix material. A plurality of semiconductor structures is embedded in the matrix material. Each semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material. Each semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates each nanocrystalline shell and anisotropic nanocrystalline core pairing.Type: GrantFiled: April 13, 2015Date of Patent: October 17, 2017Assignee: Pacific Light Technologies Corp.Inventors: Juanita Kurtin, Brian Theobald, Matthew J. Carillo, Oun-Ho Park, Georgeta Masson, Steven M. Hughes
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Publication number: 20170084768Abstract: A solar concentrator module (80) employs a luminescent concentrator material (82) between photovoltaic cells (86) having their charge-carrier separation junctions (90) parallel to front surfaces (88) of photovoltaic material 84 of the photovoltaic cells (86). Intercell areas (78) covered by the luminescent concentrator material (82) occupy from 2 to 50% of the total surface area of the solar concentrator modules (80). The luminescent concentrator material (82) preferably employs quantum dot heterostructures, and the photovoltaic cells (86) preferably employ low-cost high-efficiency photovoltaic materials (84), such as silicon-based photovoltaic materials.Type: ApplicationFiled: December 5, 2016Publication date: March 23, 2017Inventors: Alex C. Mayer, Shawn R. Scully, Juanita N. Kurtin, Alex R. Guichard, Steven M. Hughes, Oun Ho Park, Paul-Emile B. Trudeau, Colin C. Reese, Manav Sheoran, Georgeta Masson
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Patent number: 9525092Abstract: A solar concentrator module (80) employs a luminescent concentrator material (82) between photovoltaic cells (86) having their charge-carrier separation junctions (90) parallel to front surfaces (88) of photovoltaic material 84 of the photovoltaic cells (86). Intercell areas (78) covered by the luminescent concentrator material (82) occupy from 2 to 50% of the total surface area of the solar concentrator modules (80). The luminescent concentrator material (82) preferably employs quantum dot heterostructures, and the photovoltaic cells (86) preferably employ low-cost high-efficiency photovoltaic materials (84), such as silicon-based photovoltaic materials.Type: GrantFiled: November 2, 2011Date of Patent: December 20, 2016Assignee: Pacific Light Technologies Corp.Inventors: Alex C. Mayer, Shawn R. Scully, Juanita N. Kurtin, Alex R. Guichard, Steven M. Hughes, Oun Ho Park, Paul-Emile B. Trudeau, Colin C. Reese, Manav Sheoran, Georgeta Masson
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Patent number: 9508892Abstract: Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, group I-III-VI semiconductor material at least partially surrounds the nano-crystalline core.Type: GrantFiled: October 7, 2015Date of Patent: November 29, 2016Assignee: Pacific Light Technologies Corp.Inventors: Steven M. Hughes, Juanita N. Kurtin
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SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL WITH INSULATOR COATING
Publication number: 20160276527Abstract: Lighting apparatus including a light emitting diode and a plurality of semiconductor structures. Each semiconductor structure includes a quantum dot comprising a nanocrystalline core comprising a first semiconductor material and a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core, the quantum dot having a photoluminescence quantum yield (PLQY) of at least 90%. An insulator layer encapsulates the quantum dot.Type: ApplicationFiled: May 28, 2013Publication date: September 22, 2016Inventors: Juanita N. KURTIN, Matthew J. CARILLO, Steven M. HUGHES, Brian THEOBALD, Colin C. REESE, Oun-Ho PARK, Georgeta MASSON -
Publication number: 20160141463Abstract: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.Type: ApplicationFiled: January 22, 2016Publication date: May 19, 2016Inventors: Juanita Kurtin, Brian Theobald, Matthew J. Carillo, Oun-Ho Park, Georgeta Masson, Steven M. Hughes
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Publication number: 20160027958Abstract: Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, group I-III-VI semiconductor material at least partially surrounds the nano-crystalline core.Type: ApplicationFiled: October 7, 2015Publication date: January 28, 2016Applicant: Pacific Light Technologies Corp.Inventors: Steven M. Hughes, Juanita N. Kurtin
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Patent number: 9187692Abstract: Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, semiconductor material at least partially surrounds the nano-crystalline core. In one specific example, the nano-crystalline core/nano-crystalline shell pairing has a photoluminescence quantum yield (PLQY) of greater than 60%. In another specific example, the nano-crystalline core/nano-crystalline shell pairing is a Type I hetero-structure.Type: GrantFiled: March 12, 2013Date of Patent: November 17, 2015Assignee: Pacific Light Technologies Corp.Inventors: Steven M. Hughes, Juanita N. Kurtin
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Patent number: 9153734Abstract: A method of fabricating a semiconductor structure involves forming an anisotropic nanocrystalline core from a first semiconductor material, the anisotropic nanocrystalline core having an aspect ratio between, but not including, 1.0 and 2.0, and forming a nanocrystalline shell from a second, different, semiconductor material to at least partially surround the anisotropic nanocrystalline core.Type: GrantFiled: May 28, 2013Date of Patent: October 6, 2015Assignee: Pacific Light Technologies Corp.Inventors: Juanita N. Kurtin, Matthew J. Carillo, Steven M. Hughes
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Publication number: 20150240153Abstract: Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, semiconductor material at least partially surrounds the nano-crystalline core. In one specific example, the nano-crystalline core/nano-crystalline shell pairing has a photoluminescence quantum yield (PLQY) of greater than 60%. In another specific example, the nano-crystalline core/nano-crystalline shell pairing is a Type I hetero-structure.Type: ApplicationFiled: March 12, 2013Publication date: August 27, 2015Inventors: Steven M. Hughes, Juanita N. Kurtin
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Semiconductor Structure having Nanocrystalline Core and Nanocrystalline Shell with Insulator Coating
Publication number: 20150236222Abstract: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.Type: ApplicationFiled: May 5, 2015Publication date: August 20, 2015Inventors: Juanita N. KURTIN, Matthew J. CARILLO, Steven M. HUGHES, Brian THEOBALD, Oun-Ho PARK, Georgeta MASSON