Abstract: A system comprises a silicon seed arranged on a pedestal, where the silicon seed is ring shaped and is configured to receive melted silicon at a feed rate to form an ingot, and where the pedestal is configured to rotate at a rotational speed. A controller is configured to, while the silicon seed receives the melted silicon and while the ingot is forming: receive feedback regarding a diameter of the ingot and regarding an angle of a meniscus of the ingot, and control the rotational speed of the pedestal and the feed rate of the melted silicon based on the feedback to control the diameter of the ingot and the angle of the meniscus of the ingot.

Abstract: A system comprises a silicon seed arranged on a pedestal, where the silicon seed is ring shaped and is configured to receive melted silicon at a feed rate to form an ingot, and where the pedestal is configured to rotate at a rotational speed.

Abstract: A method for creating and using an assembly includes arranging a bonding material between a first component and a second component. The first component, the bonding material and the second component are heated to a predetermined temperature for a predetermined period to melt the bonding material and to create an assembly. The predetermined temperature is at or greater than a melting temperature of the bonding material and less than a melting temperature of the first component and the second component. The method includes using the assembly inside a batch furnace of a substrate processing system or a processing chamber of a substrate processing system. The first component and the second component are made from a material selected from a group consisting of silicon and silicon carbide. The bonding material is selected from a group consisting of aluminum, gold, germanium, indium or an alloy of silicon and aluminum, gold, germanium, or indium.

Abstract: A method and apparatus for producing silicon single crystals with reduced contamination is disclosed. In one embodiment the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have two protective layers. The first protective layer is applied directly to the graphite component. The second protective layer is a silicon layer and is applied on top of the first protective layer and covers the first layer. In a second embodiment, the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have a single protective layer. The single protective layer is applied directly to the graphite and consists of a mixture of silicon carbide and silicon.