Patents by Inventor Steven M. Mcdermott

Steven M. Mcdermott has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase change memory device
    Patent number: 11264569
    Abstract: A phase change material memory device is provided. The phase change material memory device includes one or more electrical contacts in a substrate, and a dielectric cover layer on the electrical contacts and substrate. The phase change material memory device further includes a lower conductive shell in a trench above one of the one or more electrical contacts, and an upper conductive shell on the lower conductive shell in the trench. The phase change material memory device further includes a conductive plug filling the upper conductive shell. The phase change material memory device further includes a liner layer on the dielectric cover layer and conductive plug, and a phase change material block on the liner layer on the dielectric cover layer and in the trench.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: March 1, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Injo Ok, Kevin W. Brew, Timothy M. Philip, Muthumanickam Sankarapandian, Sanjay C. Mehta, Nicole Saulnier, Steven M. Mcdermott
  • PHASE CHANGE MEMORY DEVICE
    Publication number: 20210135104
    Abstract: A phase change material memory device is provided. The phase change material memory device includes one or more electrical contacts in a substrate, and a dielectric cover layer on the electrical contacts and substrate. The phase change material memory device further includes a lower conductive shell in a trench above one of the one or more electrical contacts, and an upper conductive shell on the lower conductive shell in the trench. The phase change material memory device further includes a conductive plug filling the upper conductive shell. The phase change material memory device further includes a liner layer on the dielectric cover layer and conductive plug, and a phase change material block on the liner layer on the dielectric cover layer and in the trench.
    Type: Application
    Filed: November 1, 2019
    Publication date: May 6, 2021
    Inventors: Injo Ok, Kevin W. Brew, Timothy M. Philip, Muthumanickam Sankarapandian, Sanjay C. Mehta, Nicole Saulnier, Steven M. Mcdermott