Abstract: Free standing quantum do (FSQDT) polymer composites and a method and apparatus for patterning the FSQDT polymer composites is provided. The method for patterning the FSQDT polymer composites includes creating a solution including FSQDTs where each of the FSQDTs has a plurality of reactive ligands chemically attached thereto. The method further includes providing a substrate, forming a coated substrate by coating a surface of the substrate with a layer of the solution, and providing a photo mask having a predetermined pattern thereon transparent to a predetermined radiation over the coated substrate. Finally, the method includes exposing a portion of the coated substrate to the predetermined radiation passing through the mask to pattern a polymer matrix in the predetermined pattern while adhering the FSQDTs to the polymer matrix to form the FSQDT polymer composite.

Abstract: A manufacturing method and manufacturing system for creating a modular electronic assembly are disclosed. The manufacturing system 300 may position a contact terminal 202 of a printed electronic component module 102 relative to a contact pad 204 of a printed electronic substrate 112. The manufacturing system 300 may connect the contact terminal 202 to the contact pad 204 using a conductive adhesive connection 116.

Abstract: Free standing quantum do (FSQDT) polymer composites and a method and apparatus for patterning the FSQDT polymer composites is provided. The method for patterning the FSQDT polymer composites includes creating a solution including FSQDTs where each of the FSQDTs has a plurality of reactive ligands chemically attached thereto. The method further includes providing a substrate, forming a coated substrate by coating a surface of the substrate with a layer of the solution, and providing a photo mask having a predetermined pattern thereon transparent to a predetermined radiation over the coated substrate. Finally, the method includes exposing a portion of the coated substrate to the predetermined radiation passing through the mask to pattern a polymer matrix in the predetermined pattern while adhering the FSQDTs to the polymer matrix to form the FSQDT polymer composite.

Abstract: A method for identifying hazardous substances in a printed wiring assembly having a plurality of discrete components, using micro X-ray fluorescence spectroscopy. A micro X-ray fluorescence spectroscopy (?-XRF) and/or X-ray Absorption Fine Structure (XAFS) spectroscopy are used as detecting analyzers, to identify materials of concern in an electronic device. The device or assembly to be examined is analyzed by moving it in the X, Y, and Z directions under a probe in response to information in a reference database, to determine elemental composition at selected locations on the assembly, the probe positioned at an optimum analytical distance from each selected location for analysis. The determined elemental composition at each selected location is then correlated to the reference database, and the detected elements are assigned to the various components in the assembly.

Abstract: A self-joining polymer composition, comprising a polymer, a plurality of amine pendant groups attached to the polymer and a plurality of microcapsules of flowable polymerizable material dispersed in the polymer where the microcapsules of flowable polymerizable material including microcapsules and flowable polymerizable material inside the microcapsules. The microcapsules are effective for rupturing with a failure of the polymer so the flowable polymerizable material cross-links with the reactable pendant groups upon rupture of the microcapsules.

Abstract: A coating for assisting in the removal of components from devices comprising a polymer and a microwave absorbing substance dispersed in the polymer, so that when the coating is applied on a surface of a device and overlaid with a component and exposed to microwaves, the microwave absorbing substance absorbs the microwaves and allows for the component to be separated from the device.

Abstract: A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract: A microelectronic assembly includes a substrate having a plurality of bond pads disposed on a substantially planar die attach surface and an integrated circuit die having a die face and a plurality of bond pads of the die face. The die is provided with a polymeric bead about the outer edges of the die. Die face bond pads are aligned with corresponding substrate bond pads and electrically interconnected by heating to a reflow temperature. Exposure of the polymeric bead to the reflow temperature causes the bead to form a peripheral bond between the die and the substrate.

Abstract: A semiconductor device formed of a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract: A semiconductor device comprising a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract: A semiconductor device comprising a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract: A microelectronic assembly includes a substrate having a plurality of bond pads disposed on a substantially planar die attach surface and an integrated circuit die having a die face and a plurality of bond pads of the die face. The die is provided with a polymeric bead about the outer edges of the die. Die face bond pads are aligned with corresponding substrate bond pads and electrically interconnected by heating to a reflow temperature. Exposure of the polymeric bead to the reflow temperature causes the bead to form a peripheral bond between the die and the substrate.

Abstract: A microelectronic assembly includes a substrate having a plurality of bond pads disposed on a substantially planar die attach surface and an integrated circuit die having a die face and a plurality of bond pads of the die face. The die is provided with a polymeric bead about the outer edges of the die. Die face bond pads are aligned with corresponding substrate bond pads and electrically interconnected by heating to a reflow temperature. Exposure of the polymeric bead to the reflow temperature causes the bead to form a peripheral bond between the die and the substrate.

Abstract: A process for forming a thick-film resistor whose dimensions can be accurately obtained, thereby yielding a precise resistance value. The method includes providing on a substrate a photoimageable layer that preferably forms a permanent dielectric layer of a multilayer structure. An opening is photodefined in the surface of the photoimageable layer, and then overfilled with an electrically-resistive material to form a resistive mass having an excess portion that lies on the surface of the photoimageable layer surrounding the opening. Following curing which causes the surface of the resistive material to become recessed below the surface of the photoimageable layer, the excess portion of the resistive mass is removed, preferably by abrading or a similar operation, such that the lateral dimensions of the resistive mass are determined by the lateral dimensions of the opening in the photoimageable layer.

Abstract: A process for forming a thick-film resistor whose dimensions can be accurately obtained, thereby yielding a precise resistance value. The method includes providing on a substrate a photoimageable layer that preferably forms a permanent dielectric layer of a multilayer structure. An opening is photodefined in the surface of the photoimageable layer, and then overfilled with an electrically-resistive material to form a resistive mass having an excess portion that lies on the surface of the photoimageable layer surrounding the opening. Following curing which causes the surface of the resistive material to become recessed below the surface of the photoimageable layer, the excess portion of the resistive mass is removed, preferably by abrading or a similar operation, such that the lateral dimensions of the resistive mass are determined by the lateral dimensions of the opening in the photoimageable layer.