Abstract: A susceptor for supporting wafers in a reaction chamber of a barrel reactor during a chemical vapor deposition process. The susceptor includes a body sized and shaped for receipt within the reaction chamber of the barrel reactor. The body includes a generally laterally facing, sloped face having a plurality of circular recesses therein for receiving wafers to support the wafers with one surface directed generally laterally outward for exposure to reactant gas inside the reaction chamber of the barrel reactor during the chemical vapor deposition process. Each of the plurality of recesses has a substantially planar bottom and opposing arcuate wall portions on opposite sides of the planar bottom. Each wall portion intersects and merges with a corresponding wall portion of at least one adjoining recess of the plurality of recesses at an intersection.

Abstract: A method for manufacturing superplastic forming/diffusion bonding tools and a wide range of other aerospace parts by forming a titanium aluminide interface layer from ion vapor deposition is disclosed.