Abstract: Over the past few years there has been a dramatic proliferation of digital cameras, and it has become increasingly easy to share large numbers of photographs with many other people. These trends have contributed to the availability of large databases of photographs. Effectively organizing, browsing, and visualizing such .seas. of images, as well as finding a particular image, can be difficult tasks. In this paper, we demonstrate that knowledge of where images were taken and where they were pointed makes it possible to visualize large sets of photographs in powerful, intuitive new ways. We present and evaluate a set of novel tools that use location and orientation information, derived semi-automatically using structure from motion, to enhance the experience of exploring such large collections of images.

Abstract: Over the past few years there has been a dramatic proliferation of digital cameras, and it has become increasingly easy to share large numbers of photographs with many other people. These trends have contributed to the availability of large databases of photographs. Effectively organizing, browsing, and visualizing such .seas. of images, as well as finding a particular image, can be difficult tasks. In this paper, we demonstrate that knowledge of where images were taken and where they were pointed makes it possible to visualize large sets of photographs in powerful, intuitive new ways. We present and evaluate a set of novel tools that use location and orientation information, derived semi-automatically using structure from motion, to enhance the experience of exploring such large collections of images.

Abstract: Memory cells, and methods of forming such memory cells are provided that include a steering element coupled to a carbon-based reversible resistivity-switching material. In particular embodiments, methods in accordance with this invention etch a carbon nano-tube (“CNT”) film formed over a substrate, the methods including coating the substrate with a masking layer, patterning the masking layer, and etching the CNT film through the patterned masking layer using a non-oxygen based chemistry. Other aspects are also described.

Abstract: A “Blur Remover” provides various techniques for constructing deblurred images from a sequence of motion-blurred images such as a video sequence of a scene. Significantly, this deblurring is accomplished without requiring specialized side information or camera setups. In fact, the Blur Remover receives sequential images, such as a typical video stream captured using conventional digital video capture devices, and directly processes those images to generate or construct deblurred images for use in a variety of applications. No other input beyond the video stream is required for a variety of the embodiments enabled by the Blur Remover. More specifically, the Blur Remover uses joint global motion estimation and multi-frame deblurring with optional automatic video “duty cycle” estimation to construct deblurred images from video sequences for use in a variety of applications. Further, the automatically estimated video duty cycle is also separately usable in a variety of applications.

Abstract: A semiconductor p-i-n diode and method for forming the same are described herein. In one aspect, a SiGe region is formed between a region doped to have one conductivity (either p+ or n+) and an electrical contact to the p-i-n diode. The SiGe region may serve to lower the contact resistance, which may increase the forward bias current. The doped region extends below the SiGe region such that it is between the SiGe region and an intrinsic region of the diode. The p-i-n diode may be formed from silicon. The doped region below the SiGe region may serve to keep the reverse bias current from increasing as result of the added SiGe region. In one embodiment, the SiGe is formed such that the forward bias current of an up-pointing p-i-n diode in a memory array substantially matches the forward bias current of a down-pointing p-i-n diode which may achieve better switching results when these diodes are used with the R/W material in a 3D memory array.

Abstract: In a first aspect, a method of forming a memory cell is provided, the method including: (1) forming a pillar above a substrate, the pillar comprising a steering element and a metal hardmask layer; (2) selectively removing the metal hardmask layer to create a void; and (3) forming a carbon-based switching material within the void. Numerous other aspects are provided.

Abstract: In some embodiments, a memory cell is provided that includes a storage element formed from an MIM stack including (1) a first conductive layer; (2) an RRS layer formed above the first conductive layer; and (3) a second conductive layer formed above the RRS layer, at least one of the first and second conductive layers comprising a first semiconductor material layer. The memory cell includes a steering element coupled to the storage element, the steering element formed from the first semiconductor material layer of the MIM stack and one or more additional material layers. Numerous other aspects are provided.

Abstract: A method of making a non-volatile memory device includes providing a substrate having a substrate surface, and forming a non-volatile memory array over the substrate surface. The non-volatile memory array includes an array of semiconductor diodes, and each semiconductor diode of the array of semiconductor diodes is disposed substantially parallel to the substrate surface.

Abstract: A semiconductor p-i-n diode and method for forming the same are described herein. In one aspect, a SiGe region is formed between a region doped to have one conductivity (either p+ or n+) and an electrical contact to the p-i-n diode. The SiGe region may serve to lower the contact resistance, which may increase the forward bias current. The doped region extends below the SiGe region such that it is between the SiGe region and an intrinsic region of the diode. The p-i-n diode may be formed from silicon. The doped region below the SiGe region may serve to keep the reverse bias current from increasing as result of the added SiGe region. In one embodiment, the SiGe is formed such that the forward bias current of an up-pointing p-i-n diode in a memory array substantially matches the forward bias current of a down-pointing p-i-n diode which may achieve better switching results when these diodes are used with the R/W material in a 3D memory array.

Abstract: In a first aspect, a vertical semiconductor diode is provided that includes (1) a first semiconductor layer formed above a substrate; (2) a second semiconductor layer formed above the first semiconductor layer; (3) a first native oxide layer formed above the first semiconductor layer; and (4) a third semiconductor layer formed above the first semiconductor layer, second semiconductor layer and first native oxide layer so as to form the vertical semiconductor diode that includes the first native oxide layer. Numerous other aspects are provided.

Abstract: Over the past few years there has been a dramatic proliferation of digital cameras, and it has become increasingly easy to share large numbers of photographs with many other people. These trends have contributed to the availability of large databases of photographs. Effectively organizing, browsing, and visualizing such .seas. of images, as well as finding a particular image, can be difficult tasks. In this paper, we demonstrate that knowledge of where images were taken and where they were pointed makes it possible to visualize large sets of photographs in powerful, intuitive new ways. We present and evaluate a set of novel tools that use location and orientation information, derived semi-automatically using structure from motion, to enhance the experience of exploring such large collections of images.

Abstract: Over the past few years there has been a dramatic proliferation of digital cameras, and it has become increasingly easy to share large numbers of photographs with many other people. These trends have contributed to the availability of large databases of photographs. Effectively organizing, browsing, and visualizing such .seas. of images, as well as finding a particular image, can be difficult tasks. In this paper, we demonstrate that knowledge of where images were taken and where they were pointed makes it possible to visualize large sets of photographs in powerful, intuitive new ways. We present and evaluate a set of novel tools that use location and orientation information, derived semi-automatically using structure from motion, to enhance the experience of exploring such large collections of images.

Abstract: A semiconductor p-i-n diode and method for forming the same are described herein. In one aspect, a SiGe region is formed between a region doped to have one conductivity (either p+ or n+) and an electrical contact to the p-i-n diode. The SiGe region may serve to lower the contact resistance, which may increase the forward bias current. The doped region extends below the SiGe region such that it is between the SiGe region and an intrinsic region of the diode. The p-i-n diode may be formed from silicon. The doped region below the SiGe region may serve to keep the reverse bias current from increasing as result of the added SiGe region. In one embodiment, the SiGe is formed such that the forward bias current of an up-pointing p-i-n diode in a memory array substantially matches the forward bias current of a down-pointing p-i-n diode which may achieve better switching results when these diodes are used with the R/W material in a 3D memory array.

Abstract: Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects this invention, such as non-volatile memories, that include (1) a bottom electrode, (2) a resistivity-switchable layer disposed above and in contact with the bottom electrode, and (3) a top electrode disposed above and in contact with the resistivity-switchable layer; wherein the resistivity-switchable layer includes a carbon-based material and a dielectric filler material. Numerous additional aspects are provided.

Abstract: In some embodiments, a memory cell is provided that includes (1) a bipolar storage element formed from a metal-insulator-metal (MIM) stack including (a) a first conductive layer; (b) a reversible resistivity switching (RRS) layer formed above the first conductive layer; (c) a metal/metal oxide layer stack formed above the first conductive layer; and (d) a second conductive layer formed above the RRS layer and the metal/metal oxide layer stack; and (2) a steering element coupled to the storage element. Numerous other aspects are provided.

Abstract: Over the past few years there has been a dramatic proliferation of digital cameras, and it has become increasingly easy to share large numbers of photographs with many other people. These trends have contributed to the availability of large databases of photographs. Effectively organizing, browsing, and visualizing such .seas. of images, as well as finding a particular image, can be difficult tasks. In this paper, we demonstrate that knowledge of where images were taken and where they were pointed makes it possible to visualize large sets of photographs in powerful, intuitive new ways. We present and evaluate a set of novel tools that use location and orientation information, derived semi-automatically using structure from motion, to enhance the experience of exploring such large collections of images.

Abstract: A “Blur Remover” provides various techniques for constructing deblurred images from a sequence of motion-blurred images such as a video sequence of a scene. Significantly, this deblurring is accomplished without requiring specialized side information or camera setups. In fact, the Blur Remover receives sequential images, such as a typical video stream captured using conventional digital video capture devices, and directly processes those images to generate or construct deblurred images for use in a variety of applications. No other input beyond the video stream is required for a variety of the embodiments enabled by the Blur Remover. More specifically, the Blur Remover uses joint global motion estimation and multi-frame deblurring with optional automatic video “duty cycle” estimation to construct deblurred images from video sequences for use in a variety of applications. Further, the automatically estimated video duty cycle is also separately usable in a variety of applications.

Abstract: A method of making a device includes forming an underlying mask layer over an underlying layer, forming a first mask layer over the underlying mask layer, patterning the first mask layer to form first mask features, undercutting the underlying mask layer to form underlying mask features using the first mask features as a mask, removing the first mask features, and patterning the underlying layer using at least the underlying mask features as a mask.

Abstract: In a first aspect, a method of forming a memory cell is provided, the method including: (1) forming a pillar above a substrate, the pillar comprising a steering element and a metal hardmask layer; (2) selectively removing the metal hardmask layer to create a void; and (3) forming a carbon-based switching material within the void. Numerous other aspects are provided.

Abstract: A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.