Abstract: A system for transmitting power to a remote equipment, the system including a first laser source that generates a first laser beam; a first tracking device operatively connected to the first laser source, wherein the first tracking device controls a direction of the first laser beam; and a first photovoltaic device operatively connected to the remote equipment located remotely from the first laser source and the first tracking device, wherein the first photovoltaic device includes a semiconductor material that generates an electric current in response to absorbing the first laser beam, and wherein a first wavelength of the first laser beam is within an eye-safer range.

Abstract: The invention relates to rare-earth-doped ternary sulfides. The rare-earth-doped ternary sulfides may be used as an active material for mid-wave infrared and long-wave infrared lasers and amplifiers. Methods for producing laser materials including rare-earth-doped ternary sulfides, as well as lasers and amplifiers incorporating the laser materials, are also provided.

Abstract: An optical system having two or more different optical elements with a corresponding interface between the optical elements. At least one of the optical elements has an anti-reflective structure that is transferred to the interface between two optical elements, typically by embossing. Also disclosed is the related method for making the optical system.

Abstract: The present invention provides a method for synthesizing a new class of inorganic-organic polymeric materials. These polymers are made with a backbone comprising chalcogenide elements such as sulfur, selenium, and/or tellurium along with organic crosslinking moieties that determine its physical and optical properties. Also disclosed are the related polymeric materials. These polymers are suitable for optical applications in short wave infrared (SWIR, 1-3 ?m) and mid wave infrared (MWIR, 3-8 ?m) regions.

Abstract: The present invention provides a method for synthesizing a new class of inorganic-organic polymeric materials. These polymers are made with a backbone comprising chalcogenide elements such as sulfur, selenium, and/or tellurium along with organic crosslinking moieties that determine its physical and optical properties. Also disclosed are the related polymeric materials. These polymers are suitable for optical applications in short wave infrared (SWIR, 1-3 ?m) and mid wave infrared (MWIR, 3-8 ?m) regions.

Abstract: A system for transmitting power to a remote equipment, the system including a first laser source that generates a first laser beam; a first tracking device operatively connected to the first laser source, wherein the first tracking device controls a direction of the first laser beam; and a first photovoltaic device operatively connected to the remote equipment located remotely from the first laser source and the first tracking device, wherein the first photovoltaic device includes a semiconductor material that generates an electric current in response to absorbing the first laser beam, and wherein a first wavelength of the first laser beam is within an eye-safer range.

Abstract: A method of growing a single crystal material using a device that includes a conical plug. The conical plug includes a first portion defining a first conical hole about an axis, the first conical hole having a first angle, and includes a second portion contiguous with the first portion and defining a second conical hole about the axis, the second conical hole having a second angle having the same sign as the first angle and being greater than the first angle. The device includes an upper tube comprising the conical plug fused therein and a seeding well plug. The device includes a lower tube including the seeding well plug fused therein. A single crystal KPb2Cl5 material is grown from the oriented single crystal KPb2Cl5 seed through the first conical hole and then the second conical hole and then with continuing growth in the upper tube.

Abstract: A quasi-three level laser system having crystalline YAG or YLF doped with trivalent Dysprosium can be pumped with a laser diode in the UV, and produce a pulsed laser blue emission from the 4 F9/2 energy level at 490 nm, a red emission at 660 nm, or a yellow emission at 570 nm. The system can operate at room temperature or be cooled. The system can include Q-switching. A suitable laser diode is GaN.

Abstract: The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt. This disclosure allows for a direct synthesis of these materials without the use of water or the introduction of other possible contaminants.

Abstract: The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt. This disclosure allows for a direct synthesis of these materials without the use of water or the introduction of other possible contaminants.

Abstract: The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt. This disclosure allows for a direct synthesis of these materials without the use of water or the introduction of other possible contaminants.

Abstract: The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt. This disclosure allows for a direct synthesis of these materials without the use of water or the introduction of other possible contaminants.

Abstract: An optical system having two or more different optical elements with a corresponding interface between the optical elements. At least one of the optical elements has an anti-reflective structure that is transferred to the interface between two optical elements, typically by embossing. Also disclosed is the related method for making the optical system.

Abstract: A quasi-three level laser system having crystalline YAG or YLF doped with trivalent Dysprosium can be pumped with a laser diode in the UV, and produce a pulsed laser blue emission from the 4 F 9/2 energy level at 490 nm, a red emission at 660 nm, or a yellow emission at 570 nm. The system can operate at room temperature or be cooled. The system can include Q-switching. A suitable laser diode is GaN.

Abstract: A method and apparatus for growing a single crystal Kb2Cl5 material in a growth furnace comprising an upper zone set at 480° C. A single crystal Kb2Cl5 material is grown from a single Kb2Cl5 grain until a eutectic point is reached. The upper zone is cooled at 1°/hour to 380° C. The single crystal Kb2Cl5 material is annealed. The single crystal Kb2Cl5 material is cooled at 10°/hour to room temperature. Optionally, the method further includes loading an ampoule with Kb2Cl5 powder, the ampoule including a plug, which includes a seeding well and an aperture. The Kb2Cl5 powder is melted, thereby generating a melt. The melt is frozen to capture a polycrystalline Kb2Cl5 material in the seeding well, thereby generating a polycrystalline Kb2Cl5 seed. The ampoule is loaded into the growth furnace. The polycrystalline Kb2Cl5 material is melted except for the polycrystalline Kb2Cl5 seed, the polycrystalline Kb2Cl5 seed including the single Kb2Cl5 grain.

Abstract: A method and apparatus for growing a single crystal KPb2Cl5 material using a device including a plug including an axis. The plug includes a first portion defining a cylindrical hole about the axis. The plug includes a second portion defining a first conical hole about the axis. The first conical hole has a first angle. The plug includes a third portion defining a second conical hole about the axis. The second conical hole has a second angle opposite in sign relative to the first angle. The plug includes a fourth portion defining a third conical hole about the axis. The third conical hole has a third angle, the third angle having a same sign as the second angle and being greater than the second angle. The device further includes an ampoule including the plug fused therein.

Abstract: A method for selecting laser and pump frequencies for a quasi-two level solid state laser with a selected laser host and operating the laser with the selected laser and pump frequencies, the host having a fluorescence probablility P(&ngr;) over a frequency range from &ngr;i to &ngr;f, has the steps: (a) determining for the laser host, a power weighted average fluorescence frequency <&ngr;F> given by ⟨ v F ⟩ = 1 ( v f - v i ) ⁢ ∫ v i v f ⁢ v ·

Abstract: A system for remote optical communications includes a base station and a remote station. The remote station includes a retroreflector, a multiple quantum well modulator (MQW), and drive circuitry that drives the MQW. A base station transmitter sends an interrogating light beam to the MQW, which modulates the light beam based on the information in the electrical signal from the drive circuitry. The retroreflector reflects the modulated light beam to the base station for detection by a receiver.

Abstract: A multiple quantum well spatial light modulator combines both optically addressed and electrically addressed portions on a single wafer. The electrically and optically addressed portions may be physically distinct or combined. To fabricate the modulator, a portion of an optically addressed multiple quantum well spatial light modulator is configured as an electrically addressed portion by pixellating that portion of the multiple quantum well wafer. The frequency of the applied voltage to the electrically addressed portion is increased such that the voltage switches faster than both the dark and illuminated screening time. The electrically and optically addressed portions may be combined or positioned side-by-side. The spatial light modulator has applications in a wide variety of low-cost, high performance pattern recognition systems. In one system, a first infrared beam impinges the electrically addressed portion of the modulator and picks up the pattern electrically written thereon (i.e., the template image).

Abstract: A high-efficiency fluorescent emitter includes an excitation source and a w phonon host doped with erbium. The emitter can be used as a lasing medium or as a phosphor. Typical hosts include RcX.sub.3 and chalcogenide glasses, wherein Rc is yttrium, gadolinium, lutetium, lanthanum or a mixture thereof, and X is a halogen or a mixture of halogens.