Abstract: A luminescent diode surface within the cold shield of an infrared camera to allow for continuous non-uniformity correction with uniform irradiance across an infrared IR detector array. Further provided by the inclusion of a luminescent diode surface within the cold shield paneling is the ability to change the diode bias providing a negative luminescent effect while utilizing reverse bias and an electro-luminescent effect while utilizing a forward bias. This may then further allow for multiple set points to provide continuous offset and gain correction and to correct non-linear response effects.

Abstract: A midwave infrared lead salt photodetector manufactured by a process comprising the step of employing molecular beam epitaxy (MBE) to grow a heterostructure photoconductive detector with a wide-gap surface layer that creates a surface channel for minority carriers.

Abstract: A midwave infrared lead salt photodetector manufactured by a process comprising the step of employing molecular beam epitaxy (MBE) to grow a heterostructure photoconductive detector with a wide-gap surface layer that creates a surface channel for minority carriers.

Abstract: A room temperature operation polycrystalline infrared responsive photodetector, manufactured by a process, comprising the steps of patterning vacuum-deposited material and dry-etching a photonic crystal structure with resonant coupling tuned to long wavelengths.

Abstract: A buffer amplifier configuration simultaneously reduces d.c. voltage offsets through the signal flow path between its input and output and maintains a high input impedance and a low output impedance. In a preferred embodiment, high input impedance is achieved by coupling the input transistor's collector to a high impedance current source, which is coupled to one of the buffer's power supply rails. The emitter of the input transistor is coupled to the input terminal and its base of the base of a like polarity bipolar output transistor, the emitter of which is coupled to an output terminal and the collector of which is coupled to one supply rail. Since both the input and output transistors are of the same polarity type (so that they can be reasonably well matched during manufacture) and have their base-emitter junctions connected back-to-back between the input and output terminals, they impart effectively no Vbe-based d.c. offset voltage through the buffer.

Abstract: An infrared sensitive photodiode which is made of an epitaxial layer of a miconductor alloy which is a lead chalcogenide, a lead-tin chalcogenide, or a lead-cadmium chalcogenide grown on a single crystal substrate of an infrared transparent, electrically insulating material, an Ohmic contact deposited on the epitaxial layer, and a non-Ohmic Pb metal contact deposited on the epitaxial layer to form a Schottky barrier, the improvement comprising the inclusion of halide ions in the interface region between the non-Ohmic lead metal contact and the epitaxial layer of semiconductor material.

Abstract: A multi-heterojunction of one type of photoconductive layer with another type of photoconductive layer to provide back-to-back modulators using illumination to decrease a potential barrier for current flow and increase voltage drop across an electro-optic device therewith associated in reproduction of an image thereby.