Abstract: A method for ion beam implantation is provided. The method provides an ion implantation with a multiple-geometric-orientation ion beam that accommodates a range of tilt angles. The range of tilt angles can be defined with a dose distribution specified across the range of tilt angles. The method comprises: acquiring ion implantation parameters, determining the number of exposure steps, selecting implantation parameters corresponding to the exposure steps, acquiring implantation data, defining a first implantation sequence, creating a multiple-geometric-orientation implant exposure sequence according to the first implantation sequence, and performing the ion implantation according to the multiple-geometric-orientation implant exposure sequence.

Abstract: Improved electron beam sterilization apparatus and shielding techniques for use in are provided. A controller modulates an electron beam when sterilizing an interior to an object to ensure that adequate dose is received. Sterilization carousels are configured with input/discharge feeds to reduce the possibility of humans being exposed to dangerous levels of radiation. The system reduces the amount of shielding required to thereby lower cost of installation.

Abstract: Improved electron beam sterilization apparatus and shielding techniques for use in are provided. A controller modulates an electron beam when sterilizing an interior to an object to ensure that adequate dose is received. Sterilization carousels are configured with input/discharge feeds to reduce the possibility of humans being exposed to dangerous levels of radiation. The system reduces the amount of shielding required to thereby lower cost of installation.

Abstract: An electron beam emitter includes an electron generator for generating electrons. The electron generator can have a housing containing at least one electron source for generating the electrons. The at least one electron source has a width. The electron generator housing can have an electron permeable region spaced from the at least one electron source for allowing extraction of the electrons from the electron generator housing. The electron permeable region can include a series of narrow elongate slots and ribs formed in the electron generator housing and extending laterally beyond the width of the at least one electron source. The electron permeable region can be configured and positioned relative to the at least one electron source for laterally spreading the electrons that are generated by the at least one electron source.

Abstract: Improved electron beam sterilization apparatus and shielding techniques for use in are provided. A controller modulates an electron beam when sterilizing an interior to an object to ensure that adequate dose is received. Sterilization carousels are configured with input/discharge feeds to reduce the possibility of humans being exposed to dangerous levels of radiation. The system reduces the amount of shielding required to thereby lower cost of installation.

Abstract: Improved electron beam sterilization apparatus and shielding techniques for use in are provided. A controller modulates an ebeam when sterilizing an interior to an object to ensure that adequate dose is received. Sterilization carousels are configured with input/discharge feeds to reduce the possibility of humans being exposed to dangerous levels of radiation. The system reduces the amount of shielding required to thereby lower cost of installation.

Abstract: Improved electron beam sterilization apparatus and shielding techniques for use in are provided. A controller modulates an electron beam when sterilizing an interior to an object to ensure that adequate dose is received. Sterilization carousels are configured with input/discharge feeds to reduce the possibility of humans being exposed to dangerous levels of radiation. The system reduces the amount of shielding required to thereby lower cost of installation.

Abstract: An electron beam emitter includes an electron generator for generating electrons. The electron generator can have a housing containing at least one electron source for generating the electrons. The at least one electron source has a width. The electron generator housing can have an electron permeable region spaced from the at least one electron source for allowing extraction of the electrons from the electron generator housing. The electron permeable region can include a series of narrow elongate slots and ribs formed in the electron generator housing and extending laterally beyond the width of the at least one electron source. The electron permeable region can be configured and positioned relative to the at least one electron source for laterally spreading the electrons that are generated by the at least one electron source.

Abstract: A plasma doping apparatus includes a chamber and a plasma source that generates ions from a dopant gas. A platen is positioned in the chamber adjacent to the plasma source that supports a wafer for plasma doping. A deflection grid comprising a first and second deflection electrode is positioned in the chamber between the plasma source and the platen. The deflection grid deflects ions with an angle that is proportional to a voltage difference between the first and the second deflection electrodes.