Abstract: A pad groove analyzer and associated method configured to assess the grooves on the pad and determine how worn the pad is. The pad groove analyzer may be configured to monitor the grooves via a contact or no-contact process. In a contact process, the pad groove analyzer may include a stylus which physically contacts and moves along the pad. As the stylus falls into the grooves in the pad as the stylus moves along the pad, signals are created, and a stylus monitor uses the signals to determine to what extent the pad is worn. The stylus monitor can be configured to communicate with the general tool controller. In a no-contact process, the pad groove analyzer may take several different forms.

Abstract: An abrasive electrolyte solution adapted for thinning a layer on a substrate without contaminating the substrate. The abrasive electrolyte solution includes an electrically conductive fluid that is substantially free of materials that are reactive within a desired operating voltage potential range, and substantially free of materials that inhibit desired reactions within the desired operating voltage potential range. Also included are abrasive particles that have a size that is small enough for the particles to substantially remain in suspension in the electrically conductive fluid, and large enough for the particles to provide a desired degree of erosion of the layer on the substrate when the abrasive electrolyte solution is forced against the layer on the substrate.

Abstract: A method and apparatus which uses a plating electrode in an electrolyte bath. The plating electrode works to purify an electrolyte polishing solution during the electro-polishing process. Preferably, the plating electrode is employed in a closed loop feedback system. The plating electrode may be powered by a power supply which is controlled by a controller. A sensor may be connected to the controller and the sensor may be configured to sense a characteristic (for example, but not limited to: resistance, conductance or optical transmission, absorption of light, etc.) of the electrolyte bath, which tends to indicate the level of saturation. Preferably, the plating electrode is easily replaceable.

Abstract: A method of electro-polishing a copper plated wafer. The method includes providing an opening which is at least as long as the copper plated wafer. The method includes dispensing an electrolyte through the opening such that the electrolyte contacts the copper plated wafer, and while dispensing the electrolyte through the opening, relative movement is effected between the opening and the copper plated wafer. The opening can have a uniform width, be convex, concave, or take any other shape depending on the application. The copper plated wafer can be moved linearly across the opening and can also be rotated. The electrolyte can be delivered to a process tank having a containment device thereon which provides the opening. As such, the opening functions an overflow weir.

Abstract: A device and method wherein a thermo electric generator device is disposed between stacks of a multiple level device, or is provided on or under a die of a package and is conductively connected to the package. The thermo electric generator device is configured to generate a voltage by converting heat into electric power. The voltage which is generated by the thermo electric generator can be recycled back into the die itself, or to a higher-level unit in the system, even to a cooling fan.

Abstract: A pad groove analyzer and associated method configured to assess the grooves on the pad and determine how worn the pad is. The pad groove analyzer may be configured to monitor the grooves via a contact or no-contact process. In a contact process, the pad groove analyzer may include a stylus which physically contacts and moves along the pad. As the stylus falls into the grooves in the pad as the stylus moves along the pad, signals are created, and a stylus monitor uses the signals to determine to what extent the pad is worn. The stylus monitor can be configured to communicate with the general tool controller. In a no-contact process, the pad groove analyzer may take several different forms.

Abstract: A method and system wherein magnets are employed on the outside of a plating bath chamber to control the field lines that are used during the plating process. By being able to control the field lines during the plating process, improved gap fill and uniformity can be achieved. The magnetic field acting on the bath can be continuous, pulsed, stressed (i.e., the shape of the field can be changed), sinusoidal, etc. The magnetic field can be modulated as function of time to produce a desired copper uniformity on the wafer. It is anticipated that there is no limit to how the shape of the magnets or magnetic field can be configured and controlled to achieve the desired result for both fill of deep contacts and the uniformity needed to match the succeeding polishing process.

Abstract: A method and control system for detecting harmonic oscillation in a chemical mechanical polishing process and reacting thereto, such as by taking steps to at least one of: 1) reduce or eliminate the harmonic oscillation; and 2) counter the noise which is associated with the harmonic oscillation. By reducing or eliminating harmonic oscillation, films with reduced structure strengths including low k dielectric films can be used. By countering the noise, the quality of the work environment is improved.

Abstract: A device for measuring resistances associated with electrical contacts of a contact ring used in a semiconductor wafer electroplating process. The device includes a substrate and a conductive pattern on the substrate. The conductive pattern is electrically contactable with the electrical contacts of the contact ring. Resistance measurement circuitry is connected to the conductive pattern. The resistance measurement circuitry is configured to send test signals to the conductive pattern, receive signals from the conductive pattern, and measure the resistances associated with the electrical contacts of the contact ring. A method of using such a device to measure resistances associated with electrical contacts of a contact ring used in a semiconductor wafer electroplating process is also provided.

Abstract: A method for performing the edge clean operation on a semiconductor wafer. A laser beam is used to accurately clean the edge of the wafer. The wafer is clamped concentrically to a chuck and rotated at a selectable speed, preferably in the range of 10 rpm to 1,000 rpm. A laser beam of variable power is directed onto toward the edge of the wafer at an oblique angle through a nozzle through which an inert purge gas is simultaneously passed. The laser beam removes unwanted deposits at the edge of the wafer and the gas is used to blow away the residue and prevent slag buildup on other parts of the wafer. The process is preferably carried out in an exhausted chamber.

Abstract: An electropolishing pad adapted for thinning a layer on a substrate, without damaging a delicate underlying layer in the substrate. The electropolishing pad includes a pad formed of an electrically conductive material, for applying a desired voltage potential through the electropolishing pad to electrolytically erode the layer on the substrate. An operating surface on the pad physically erodes the layer on the substrate. The operating surface has a roughness that is not so great as to create friction sufficient to induce a shearing force that damages the delicate underlying layer in the substrate, but great enough so as to physically erode the layer on the substrate.

Abstract: A system for thinning a layer on a substrate without damaging a delicate underlying layer in the substrate. The system includes means for mechanically eroding the layer on the substrate, and means for electropolishing the layer on the substrate. In this manner, portions of the layer that cannot be removed by electropolishing can be removed by the mechanical erosion. However, electropolishing can preferentially be used on some portions of the layer so that unnecessary mechanical stresses can be avoided. Thus, the system imparts less mechanical stress to the substrate during the removal of the layer, and the delicate underlying layer receives less damage during the process, and preferably no damage whatsoever.

Abstract: An abrasive electrolyte solution adapted for thinning a layer on a substrate without contaminating the substrate. The abrasive electrolyte solution includes an electrically conductive fluid that is substantially free of materials that are reactive within a desired operating voltage potential range, and substantially free of materials that inhibit desired reactions within the desired operating voltage potential range. Also included are abrasive particles that have a size that is small enough for the particles to substantially remain in suspension in the electrically conductive fluid, and large enough for the particles to provide a desired degree of erosion of the layer on the substrate when the abrasive electrolyte solution is forced against the layer on the substrate.

Abstract: A method for performing the edge clean operation on a semiconductor wafer. A laser beam is used to accurately clean the edge of the wafer. The wafer is clamped concentrically to a chuck and rotated at a selectable speed, preferably in the range of 10 rpm to 1,000 rpm. A laser beam of variable power is directed onto toward the edge of the wafer at an oblique angle through a nozzle through which an inert purge gas is simultaneously passed. The laser beam removes unwanted deposits at the edge of the wafer and the gas is used to blow away the residue and prevent slag buildup on other parts of the wafer. The process is preferably carried out in an exhausted chamber.

Abstract: Application of an extremely low K material by the application of a laminate onto a wafer. The laminate preferably contains alternating layers of low K material and etch stop layers, and could be applied by rolling the laminate onto the wafer. An anneal process can be utilized to bond the film to the wafer. Conventional photo masking and etching techniques are then used to open vias and line areas in the film, and to deposit the next copper layer on the wafer. Electro polishing can be used to planarize or remove residual copper. Thereafter, an etch step can be performed to remove the excess material between the copper lines to leave an ultra low K region between the copper lines. The next layer of low K film can then be deposited, and the process repeated for all subsequent metal layering.

Abstract: A conductive type of seed or process film is used to cover the front side, the side, and at least a portion of the back side of a semiconductor wafer. The portion of the film which is on the back side of the wafer acts as contact for the electro-plating or electro-polishing process, thereby obviating the need for any front side contact. During the electro-process, the wafer can be positioned on a backing plate which supports the wafer as well as contacts which engage at least a portion of the conductive layer on the back side of the wafer. In depositing the conductive seed or process film, the wafer is positioned on a pedestal which has a diameter that is smaller than a diameter of the wafer. The difference in the pedestal and wafer diameters then becomes the area where the conductive seed or process film covers the back side of the wafer. The conductive film can be easily removed during subsequent wafer processing.

Abstract: A method and apparatus which uses a plating electrode in an electrolyte bath. The plating electrode works to purify an electrolyte polishing solution during the electro-polishing process. Preferably, the plating electrode is employed in a closed loop feedback system. The plating electrode may be powered by a power supply which is controlled by a controller. A sensor may be connected to the controller and the sensor may be configured to sense a characteristic (for example, but not limited to: resistance, conductance or optical transmission, absorption of light, etc.) of the electrolyte bath, which tends to indicate the level of saturation. Preferably, the plating electrode is easily replaceable.

Abstract: A method of electro-polishing a copper plated wafer. The method includes providing an opening which is at least as long as the copper plated wafer. The method includes dispensing an electrolyte through the opening such that the electrolyte contacts the copper plated wafer, and while dispensing the electrolyte through the opening, relative movement is effected between the opening and the copper plated wafer. The opening can have a uniform width, be convex, concave, or take any other shape depending on the application. The copper plated wafer can be moved linearly across the opening and can also be rotated. The electrolyte can be delivered to a process tank having a containment device thereon which provides the opening. As such, the opening functions an overflow weir.

Abstract: A method for performing the edge clean operation on a semiconductor wafer. A laser beam is used to accurately clean the edge of the wafer. The wafer is clamped concentrically to a chuck and rotated at a selectable speed, preferably in the range of 10 rpm to 1,000 rpm. A laser beam of variable power is directed onto toward the edge of the wafer at an oblique angle through a nozzle through which an inert purge gas is simultaneously passed. The laser beam removes unwanted deposits at the edge of the wafer and the gas is used to blow away the residue and prevent slag buildup on other parts of the wafer. The process is preferably carried out in an exhausted chamber.

Abstract: Application of an extremely low K material by the application of a laminate onto a wafer. The laminate preferably contains alternating layers of low K material and etch stop layers, and could be applied by rolling the laminate onto the wafer. An anneal process can be utilized to bond the film to the wafer. Conventional photo masking and etching techniques are then used to open vias and line areas in the film, and to deposit the next copper layer on the wafer. Electro polishing can be used to planarize or remove residual copper. Thereafter, an etch step can be performed to remove the excess material between the copper lines to leave an ultra low K region between the copper lines. The next layer of low K film can then be deposited, and the process repeated for all subsequent metal layering.