Abstract: A chamber body includes a ceramic weldment having a lower wall, a sidewall, and an upper wall. The sidewall is coupled to the lower wall by a sidewall-to-lower wall weld and the upper wall is coupled to the sidewall by a sidewall-to-upper wall weld. The upper wall has an upper wall plate portion and an upper wall rib portion extending therefrom formed from a singular quartz workpiece using a subtractive manufacturing technique, the upper wall further having a unwelded ribbed region overlying the lower wall. Chamber arrangements, semiconductor processing systems and related methods of making chamber bodies and depositing material layers onto substrates supported within chamber bodies are also described.

Abstract: A method of processing a silicon surface includes using a first radical species to remove contamination from the surface and to roughen the surface; and using a second radical species to smooth the roughened surface. Reaction systems for performing such a method, and silicon surfaces prepared using such a method, also are provided.

Abstract: A mapping module is configured to create a preview layer that depicts attributes of real-world objects located within the boundaries of a map. The mapping module uses search criteria to highlight multiple attributes without separately creating a filtered data set for each attribute. The mapping module may change the boundaries of the map in response to changed search criteria. The mapping module may also change the displayed attributes in response to changed map boundaries. By highlighting the selected attributes, the mapping module helps to visually identify relationships between complex real-world objects.

Abstract: A mapping module is configured to create a preview layer that depicts attributes of real-world objects located within the boundaries of a map. The mapping module uses search criteria to highlight multiple attributes without separately creating a filtered data set for each attribute. The mapping module may change the boundaries of the map in response to changed search criteria. The mapping module may also change the displayed attributes in response to changed map boundaries. By highlighting the selected attributes, the mapping module helps to visually identify relationships between complex real-world objects.

Abstract: A mapping module is configured to create a preview layer that depicts attributes of real-world objects located within the boundaries of a map. The mapping module uses search criteria to highlight multiple attributes without separately creating a filtered data set for each attribute. The mapping module may change the boundaries of the map in response to changed search criteria. The mapping module may also change the displayed attributes in response to changed map boundaries. By highlighting the selected attributes, the mapping module helps to visually identify relationships between complex real-world objects.

Abstract: A mapping module is configured to create a preview layer that depicts attributes of real-world objects located within the boundaries of a map. The mapping module uses search criteria to highlight multiple attributes without separately creating a filtered data set for each attribute. The mapping module may change the boundaries of the map in response to changed search criteria. The mapping module may also change the displayed attributes in response to changed map boundaries. By highlighting the selected attributes, the mapping module helps to visually identify relationships between complex real-world objects.

Abstract: Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.

Abstract: Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.

Abstract: Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.

Abstract: The present invention generally provides an apparatus and method for reducing defects on films deposited on semiconductor substrates. One embodiment of the present invention provides a method for depositing a film on a substrate. The method comprises treating the substrate with a first plasma configured to reduce pre-existing defects on the substrate, and depositing a film comprising silicon and carbon on the substrate by applying a second plasma generated from at least one precursor and at least one reactant gas.

Abstract: A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

Abstract: Methods and systems of diagnosing an arcing problem in a semiconductor wafer processing chamber are described. The methods may include coupling a voltage probe to a process-gas distribution faceplate in the processing chamber, and activating an RF power source to generate a plasma between the faceplate and a substrate wafer. The methods may also include measuring the DC bias voltage of the faceplate as a function of time during the activation of the RF power source, where a spike in the measured voltage at the faceplate indicates an arcing event has occurred in the processing chamber. Methods and systems to reduce arcing in a semiconductor wafer processing chamber are also described.

Abstract: A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

Abstract: This invention is directed to the use of two or more light waves having separate and distinct wave lengths. The light waves are directed to a fluid. The initial detected relative intensities of the light waves is known. After the light waves have left the fluid the final relative intensities can be determined. By knowing the relative shift in the initial intensities to the final intensities it is possible to determine a characteristic of the fluid. With this characteristic of the fluid it is possible to take appropriate action to change the characteristic of the fluid or it may be desirable to take no action with respect to the characteristic of the fluid.