Abstract: A hybrid module comprising a rotor assembly including a rotor carrier and a torque converter completely disposed radially inside of the rotor carrier is provided. The torque converter assembly includes an impeller having an impeller shell fixed to the rotor carrier such that the impeller shell and the rotor carrier form a housing of the torque converter.

Abstract: A hybrid module comprising a rotor assembly including a rotor carrier and a torque converter completely disposed radially inside of the rotor carrier is provided. The torque converter assembly includes an impeller having an impeller shell fixed to the rotor carrier such that the impeller shell and the rotor carrier form a housing of the torque converter.

Abstract: Efficient techniques are provided for distributing video and data from the internet to the TV in order to permit easier access to new means of communications, e.g., internet. Each personal stream associated with an individual may only be watched on the individual's receiver. The personal stream is paired to the receiver identification number included in the signaling data associated with the personal stream. A personalized program guide may be generated including information about the personal stream and may only be watched on the individual's receiver. Obfuscation of the stream types associated with the personal stream may be performed. Methods and apparatuses for transmitting and receiving a signal are provided.

Abstract: In one embodiment, a device for decoding digital signatures to validate the source of received information items is disclosed. The device is operable to determine a first comparator value in relation to a first value associated with information items received over a network and a Diffie-Hellman public key, determine a second comparator value in relation to a digital signature received, wherein the digital signature is determined in association with a second value associated with the information items prior to transmission over said network, and com paring the first and second comparator values to validate the source based on the comparison. In another embodiment, a key generating device is operable to generate a first and second Diffie-Hellman key from a plurality of large numbers randomly selected, wherein at least one of the numbers is a prime number, and further determine a public key as a Diffie-Hellman transpose of one of the generated first and second Diffie-Hellman keys.

Abstract: In accordance with the present invention, the plasma dry cleaning rate of semiconductor process chamber walls can be improved by placing a non-gaseous dry cleaning enhancement material in the position which was occupied by the workpiece during semiconductor processing. The non-gaseous dry cleaning enhancement material is either capable of generating dry cleaning reactive species and/or of reducing the consumption of the dry cleaning reactive species generated from the plasma gas feed to the process chamber.When process chamber non-volatile contaminant deposits are removed from plasma process chamber surfaces during plasma dry cleaning by placing a non-gaseous source of reactive-species-generating material within the plasma process chamber, the non-gaseous source of reactive-species-generating material need not be loacted upon or adjacent the workpiece support platform: however, this location provides excellent cleaning results in typical process chamber designs.

Abstract: In accordance with the present invention, the plasma dry cleaning rate of semiconductor process chamber walls can be improved by placing a non-gaseous dry cleaning enhancement material in the position which was occupied by the workpiece during semiconductor processing. The non-gaseous dry cleaning enhancement material is either capable of generating dry cleaning reactive species and/or of reducing the consumption of the dry cleaning reactive species generated from the plasma gas feed to the process chamber. When process chamber non-volatile contaminant deposits are removed from plasma process chamber surfaces during plasma dry cleaning by placing a non-gaseous source of reactive-species-generating material within the plasma process chamber, the non-gaseous source of reactive-species-generating material need not be loacted upon or adjacent the workpiece support platform: however, this location provides excellent cleaning results in typical process chamber designs.

Abstract: The plasma dry cleaning rate of semiconductor process chamber walls can be improved by placing a non-gaseous dry cleaning enhancement material in the position which was occupied by the workpiece during semiconductor processing. The non-gaseous dry cleaning enhancement material is either capable generating dry cleaning reactive species and/or of reducing the consumption of the dry cleaning reactive species generated from the plasma gas feed to the process chamber.When process chamber non-volatile contaminant deposits are removed from plasma process chamber surfaces during plasma dry cleaning by placing a non-gaseous source of reactive-species-generating material within the plasma process chamber, the non-gaseous source of reactive-species-generating material need not be located upon or adjacent the workpiece support platform: however, this location provides excellent cleaning results in typical process chamber designs.