Abstract: This invention concerns nanoscale products, such as electronic devices fabricated to nanometer accuracy. It also concerns atomic scale products. These products may have an array of electrically active dopant atoms in a silicon surface, or an encapsulated layer of electrically active donor atoms. In a further aspect the invention concerns a method of fabricating such products. The methods include forming a preselected array of donor atoms incorporated into silicon. Encapsulation by growing silicon over a doped surface, after desorbing the passivating hydrogen. Also, using an STM to view donor atoms on the silicon surface during fabrication of a nanoscale device, and measuring the electrical activity of the donor atoms during fabrication of a nanoscale device. Such products and processes are useful in the fabrication of a quantum computer, but could have many other uses.

Abstract: Individual hydrogen atoms are desorbed from a hydrogen terminated layer on a silicon substrate, using an STM tip, to form a pattern of exposed regions. A single donor-bearing molecule (such as phosphorous atoms). The spins of the donor atoms may be used as qubits in a slid quantum computer.

Abstract: A tester or method of testing a mass storage interface queues error functions for simulation responsive to condition criteria of such storage simulation. Such bridge-chip tester may comprise ATA registers to receive data from an ATA or ATAPI-type interface. A main access emulator may emulate data storage processes responsive to commands of a command register of the ATA registers. A test controller may be operable to load a queue with predetermined error functions to be emulated by the tester. The queue may release error functions of the queue for emulation responsive to data of at least one of the command register and the emulator.

Abstract: This invention concerns nanoscale products, such as electronic devices fabricated to nanometer accuracy. It also concerns atomic scale products. These products may have an array of electrically active dopant atoms in a silicon surface, or an encapsulated layer of electrically active donor atoms. In a further aspect the invention concerns a method of fabricating such products. The methods include forming a preselected array of donor atoms incorporated into silicon. Encapsulation by growing silicon over a doped surface, after desorbing the passivating hydrogen. Also, using an STM to view donor atoms on the silicon surface during fabrication of a nanoscale device, and measuring the electrical activity of the donor atoms during fabrication of a nanoscale device. Such products and processes are useful in the fabrication of a quantum computer, but could have many other uses.

Abstract: Individual hydrogen atoms are desorbed from a hydrogen terminated layer on a silicon substrate, using an STM tip, to form a pattern of exposed regions. A single donor-bearing molecule (such as phosphorous atoms). The spins of the donor atoms may be used as qubits in a slid quantum computer.