Abstract: A production method for producing a semiconductor device capable of improving surface flatness and suppressing a variation in electrical characteristics of the semiconductor chip, and improving production yield. The production method includes the steps of: forming a first insulating film on a semiconductor substrate and on a conductive pattern film formed on the semiconductor substrate and reducing a thickness of the first insulating film in a region where the conductive pattern film is arranged by patterning; forming a second insulating film and polishing the second insulating film, thereby forming a flattening film; implanting a substance for cleavage into the semiconductor substrate through the flattening film, thereby forming a cleavage layer; transferring the semiconductor chip onto a substrate with an insulating surface so that the chip surface on the side opposite to the semiconductor substrate is attached thereto; and separating the semiconductor substrate from the cleavage layer.

Abstract: The present invention provides a high-performance flexible circuit board having excellent flexibility, a fine wiring pattern, and fine electric contacts, and a manufacturing method thereof. In a flexible circuit board (20), a second insulating layer (24) made of an inorganic material is positioned between a wiring layer (25) and a first insulating layer (23) made of an inorganic material.

Abstract: The present invention provides a production method of a semiconductor device, which can improve characteristics of a semiconductor element including a single crystal semiconductor layer formed by transferring on an insulating substrate. The present invention is a production method of a semiconductor device comprising a single crystal semiconductor layer formed on an insulating substrate, the production method comprising the steps of: implanting a substance for separation into a single crystal semiconductor substrate, thereby forming a separation layer; transferring a part of the single crystal semiconductor substrate, separated at the separation layer, onto the insulating substrate, thereby forming the single crystal semiconductor layer; forming a hydrogen-containing layer on at least one side of the single crystal semiconductor layer; and diffusing hydrogen from the hydrogen-containing layer to the single crystal semiconductor layer.

Abstract: The present invention provides a semiconductor device capable of improving subthreshold characteristics of a PMOS transistor that is included in a thinned base layer and bonded to another substrate, a production method of such a semiconductor device, and a display device. The semiconductor device of the present invention is a semiconductor device, including: a substrate; and a device part bonded to the substrate, the device part including a base layer and a PMOS transistor, the PMOS transistor including a first electrical conduction path and a first gate electrode, the first electrical conduction path being provided inside the base layer on a side where the first gate electrode is disposed.

Abstract: The present invention provides a production method of a semiconductor device, capable of improving surface flatness of a semiconductor chip formed on a semiconductor substrate and thereby suppressing a variation in electrical characteristics of the semiconductor chip transferred onto a substrate with an insulating surface, and further capable of improving production yield.

Abstract: The present invention provides a production method of a semiconductor device, a production method of a display device, a semiconductor device, a production method of a semiconductor element, and a semiconductor element, each capable of providing a lower-resistance semiconductor element which is more finely prepared through more simple steps. The production method of the semiconductor device of the present invention is a production method of a semiconductor device including a semiconductor element on a substrate, wherein the production method includes a metal silicide-forming step of: transferring the semiconductor element onto the substrate, the semiconductor element having a multilayer structure of a silicon layer and a metal layer, and by heating, forming metal silicide from silicon for a metal layer-side part of the silicon layer and metal for a silicon layer-side part of the metal layer.

Abstract: The present invention provides a production method of a semiconductor device, which can improve characteristics of a semiconductor element including a single crystal semiconductor layer formed by transferring on an insulating substrate. The present invention is a production method of a semiconductor device comprising a single crystal semiconductor layer formed on an insulating substrate, the production method comprising the steps of: implanting a substance for separation into a single crystal semiconductor substrate, thereby forming a separation layer; transferring a part of the single crystal semiconductor substrate, separated at the separation layer, onto the insulating substrate, thereby forming the single crystal semiconductor layer; forming a hydrogen-containing layer on at least one side of the single crystal semiconductor layer; and diffusing hydrogen from the hydrogen-containing layer to the single crystal semiconductor layer.