Patents by Inventor Steven S. McClure

Steven S. McClure has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for compensating for ionizing radiation induced threshold shift in metal oxide semiconductor field effect transistors
    Patent number: 6600241
    Abstract: A compensation circuit and method for compensating for the threshold shift in an irradiated MOSFET. The method determines the gate threshold voltage to body voltage relationship to vary the body voltage with radiation. The compensation circuit (10) has at least one MOSFET (Q2) having the same channel type as the MOSFET being compensated (Q1). The at least one matching MOSFET (Q2) is connected to the gate of the MOSFET (Q1) being compensated. At least one MOSFET (Q3, Q4) having a channel type that is different from the channel type of the MOSFET (Q1) being compensated is connected to the gate of the matching MOSFET (Q2). The result is that the compensation circuit (10) controls a negative shift in the body voltage of the MOSFET (Q1) being compensated resulting in a higher threshold voltage.
    Type: Grant
    Filed: August 23, 2002
    Date of Patent: July 29, 2003
    Assignee: The Boeing Company
    Inventors: Larry M. Tichauer, Steven S. McClure
  • Method and apparatus for compensating for ionizing radiation induced threshold shift in metal oxide semiconductor field effect transistors
    Publication number: 20030042513
    Abstract: A compensation circuit and method for compensating for the threshold shift in an irradiated MOSFET. The method determines the gate threshold voltage to body voltage relationship to vary the body voltage with radiation. The compensation circuit (10) has at least one MOSFET (Q2) having the same channel type as the MOSFET being compensated (Q1). The at least one matching MOSFET (Q2) is connected to the gate of the MOSFET (Q1) being compensated. At least one MOSFET (Q3, Q4) having a channel type that is different from the channel type of the MOSFET (Q1) being compensated is connected to the gate of the matching MOSFET (Q2). The result is that the compensation circuit (10) controls a negative shift in the body voltage of the MOSFET (Q1) being compensated resulting in a higher threshold voltage.
    Type: Application
    Filed: August 23, 2002
    Publication date: March 6, 2003
    Inventors: Larry M. Tichauer, Steven S. McClure
  • Method and apparatus for compensating for ionizing radiation induced threshold shift in metal oxide semiconductor field transistors
    Patent number: 6509589
    Abstract: A compensation circuit and method for compensating for the threshold shift in an irradiated MOSFET. The method determines the gate threshold voltage to body voltage relationship to vary the body voltage with radiation. The compensation circuit has at least one MOSFET having the same channel type as the MOSFET being compensated. The at least one matching MOSFET is connected to the gate of the MOSFET being compensated. At least one MOSFET having a channel type that is different from the channel type of the MOSFET being compensated is connected to the gate of the matching MOSFET. The result is that the compensation circuit controls a negative shift in the body voltage of the MOSFET being compensated resulting in a higher threshold voltage.
    Type: Grant
    Filed: June 14, 1999
    Date of Patent: January 21, 2003
    Assignee: Hughes Electronics Corp.
    Inventors: Larry M. Tichauer, Steven S. McClure