Abstract: It is described herein a filter media comprising at least a first layer comprising first fibers and a second layer comprising second fibers. The first fibers may comprise synthetic fibers in an amount of at least 50 wt. % based on total weight of the fibers in the first layer. The second fibers may comprise cellulosic fibers in an amount of at least 30 wt. % based on total weight of the fibers in the second layer. The first layer may be joined to the second layer with an interface between the first layer and the second layer comprising a mixture of the first fibers and the second fibers such that a z-directional tensile strength (zdt) across the first layer and the second layer—in the absence of a secondary adhesive—is at least 0.5 psi. It is also described herein a process to produce such a filter media, and a filter element comprising such a filter media.

Abstract: A compact case comprises a product palette configured with one or more product wells. The palette is connected to, and rests, on top of a shock absorbing insert, and both are located in the base of the compact. The shock absorbing insert is a flexible member comprised of one or more hubs from which one or more projections extend. The shock absorbing insert is able to absorb and dissipate energy during impact so that product in the product in the product wells is protected.

Abstract: A method and system for controlling the center-to-edge distribution of a species within a plasma is provided. In one embodiment, the invention provides a method for plasma processing, comprising determining plasma processing center-to-edge profile requirements of a substrate, and selecting a ratio of two inert gases to be provided to a plasma processing chamber in response to the plasma processing center to edge profile requirements.

Abstract: In one implementation, a method is provided for testing a plasma reactor multi-frequency matching network comprised of multiple matching networks, each of the multiple matching networks having an associated RF power source and being tunable within a tunespace. The method includes providing a multi-frequency dynamic dummy load having a frequency response within the tunespace of each of the multiple matching networks at an operating frequency of its associated RF power source. The method further includes characterizing a performance of the multi-frequency matching network based on a response of the multi-frequency matching network while simultaneously operating at multiple frequencies.

Abstract: In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage is used to accurately control the DC wafer clamping voltage.

Abstract: A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.

Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.

Abstract: A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscillation at the first frequency; and supplying a second RF signal from the source to the first electrode at a second frequency selected to cause plasma sheath oscillation at the second frequency, wherein the second frequency is different from the first frequency by a differential equal to a desired frequency selected to cause plasma sheath oscillation at the desired frequency.

Abstract: A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C.

Abstract: The present invention relates to a method of forming a coil of spring wire by winding a wire into a coil spring formed of a plurality of rings of the wire wherein each of the rings has a substantially constant strain rate. The forming speed of the wire being wound is controlled so that each of the rings has a substantially constant strain rate and minimum work hardening occurs.

Abstract: In one implementation, a method is provided for testing a plasma reactor multi-frequency matching network comprised of multiple matching networks, each of the multiple matching networks having an associated RF power source and being tunable within a tunespace. The method includes providing a multi-frequency dynamic dummy load having a frequency response within the tunespace of each of the multiple matching networks at an operating frequency of its associated RF power source. The method further includes characterizing a performance of the multi-frequency matching network based on a response of the multi-frequency matching network while simultaneously operating at multiple frequencies. In one embodiment, a plasma reactor multi-frequency dynamic dummy load is provided that is adapted for a multi-frequency matching network having multiple matching networks. Each of the multiple matching networks being tunable within a tunespace.

Abstract: A dual frequency matching circuit for plasma enhanced semiconductor processing chambers having dual frequency cathodes is provided. The matching circuit includes two matching circuits with variable shunts combined to a common output. The matching circuit balances the load of the independent RF sources to that of the plasma in the processing chamber during operation.

Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.

Abstract: A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.

Abstract: An RF power applicator of the reactor includes inner and outer conductive radial spokes. The set of inner conductive spokes extends radially outwardly from and is electrically connected to the conductive post toward the conductive side wall. The set of outer conductive spokes extends radially inwardly toward the conductive post from and is electrically connected to the conductive side wall. In this way, the inner and outer sets of conductive spokes are electrically connected together, the combination of the inner and outer set of spokes with the conductive enclosure having a fundamental resonant frequency inversely proportional to the height of the conductive enclosure and the lengths of the inner and outer set of conductive spokes. An RF source power generator is coupled across the RF power applicator and has an RF frequency corresponding to the fundamental resonant frequency.

Abstract: The present invention relates to a method of forming a coil of spring wire by winding a wire into a coil spring formed of a plurality of rings of the wire wherein each of the rings has a substantially constant strain rate. The forming speed of the wire being wound is controlled so that each of the rings has a substantially constant strain rate and minimum work hardening occurs.

Abstract: A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber ceiling and a chamber side wall and a workpiece support pedestal within the chamber, a process gas conduit and gas distribution orifices facing the interior of the chamber and coupled to the process gas conduit, a conductive enclosure outside of the chamber and overlying the ceiling and having a conductive side wall with a bottom edge supported on the chamber ceiling and a conductive ceiling supported on a top edge of the conductive side wall, and a conductive post extending parallel with the conductive side wall from a center portion of the conductive ceiling toward the chamber ceiling. An RF power applicator of the reactor includes inner and outer conductive radial spokes. The set of inner conductive spokes extends radially outwardly from and is electrically connected to the conductive post toward the conductive side wall.

Abstract: A key for selectively allowing access to an enclosure having an unpowered lock and a lock controller is disclosed. The key comprises: a housing.

Abstract: A method for a key to selectively allow access to an unpowered enclosure having a lock controller is disclosed. The key provides wireless transmission of power with simultaneous transfer of data.

Abstract: An access control technique to limit access to information content such as available on the Internet. The technique is implemented within a network device such as a proxy server, router, switch, firewall, bridge or other network gateway. The access control process analyzes data in each request from the clients and determines if the request should be forwarded for processing by a server to which it is destined. Access control may be determined by comparing client source information against a database of Uniform Resource Locators (URLs), IP addresses, or other resource identification data specifying the data requested by the client. The invention therefore provides access control not based only upon content, but rather, based primarily upon the identity of the computers or users making the requests. The technique further avoids the problems of the prior art which categories or filters the content of only web pages based solely upon objectionable words.