Patents by Inventor Steven So

Steven So has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7133992
    Abstract: A burst counter generates all but the least significant bit (“LSB”) of a sequence of column addresses in a 2-bit prefetch dynamic random access memory (“DRAM”). The sequence of column addresses is generated by either incrementing or decrementing the burst counter starting from an externally applied starting address. The count direction of the counter is controlled by a counter control circuit that receives the LSB the next to least significant bit (“NLSB”) of the starting column address, as well as a signal indicative of the operating mode of the DRAM. In a serial operating mode, the counter control circuit causes the burst counter to increment when the LSB of the starting column address is “0” and to decrement when the LSB of the starting column address is “1”. In an interleave operating mode, the counter control circuit causes the burst counter to increment when the NLSB of the starting column address is “0” and to decrement when the NLSB of the starting column address is “1”.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: November 7, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Daniel B. Penney, Steven So
  • Patent number: 7003643
    Abstract: A burst counter generates all but the least significant bit (“LSB”) of a sequence of column addresses in a 2-bit prefetch dynamic random access memory (“DRAM”). The sequence of column addresses is generated by either incrementing or decrementing the burst counter starting from an externally applied starting address. The count direction of the counter is controlled by a counter control circuit that receives the LSB the next to least significant bit (“NLSB”) of the starting column address, as well as a signal indicative of the operating mode of the DRAM. In a serial operating mode, the counter control circuit causes the burst counter to increment when the LSB of the starting column address is “0” and to decrement when the LSB of the starting column address is “1”. In an interleave operating mode, the counter control circuit causes the burst counter to increment when the NLSB of the starting column address is “0” and to decrement when the NLSB of the starting column address is “1”.
    Type: Grant
    Filed: April 16, 2001
    Date of Patent: February 21, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Daniel B. Penney, Steven So
  • Publication number: 20060020739
    Abstract: A burst counter generates all but the least significant bit (“LSB”) of a sequence of column addresses in a 2-bit prefetch dynamic random access memory (“DRAM”). The sequence of column addresses is generated by either incrementing or decrementing the burst counter starting from an externally applied starting address. The count direction of the counter is controlled by a counter control circuit that receives the LSB the next to least significant bit (“NLSB”) of the starting column address, as well as a signal indicative of the operating mode of the DRAM. In a serial operating mode, the counter control circuit causes the burst counter to increment when the LSB of the starting column address is “0” and to decrement when the LSB of the starting column address is “1”. In an interleave operating mode, the counter control circuit causes the burst counter to increment when the NLSB of the starting column address is “0” and to decrement when the NLSB of the starting column address is “1”.
    Type: Application
    Filed: August 31, 2005
    Publication date: January 26, 2006
    Inventors: Daniel Penney, Steven So