Patents by Inventor Steven T. Harshfield
Steven T. Harshfield has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8786101Abstract: Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.Type: GrantFiled: January 28, 2013Date of Patent: July 22, 2014Assignee: Round Rock Research, LLCInventor: Steven T. Harshfield
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Patent number: 8362625Abstract: Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.Type: GrantFiled: December 12, 2011Date of Patent: January 29, 2013Assignee: Round Rock Research, LLCInventor: Steven T. Harshfield
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Publication number: 20120080798Abstract: Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.Type: ApplicationFiled: December 12, 2011Publication date: April 5, 2012Applicant: ROUND ROCK RESEARCH, LLCInventor: Steven T. Harshfield
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Patent number: 8076783Abstract: Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.Type: GrantFiled: February 25, 2009Date of Patent: December 13, 2011Assignee: Round Rock Research, LLCInventor: Steven T. Harshfield
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Patent number: 8017453Abstract: A method and an apparatus for manufacturing a memory cell having a nonvolatile resistive memory element with a limited size active area. The method comprises a first step of providing a dielectric volume and forming a plug opening within the dielectric volume. A recessed plug of a conductive material is then formed within a lower portion of the opening and a dielectric spacer is formed along the sidewalls of an upper portion of the opening. The spacer is cylindrical and has a central hole. A contact plug is subsequently formed within the central hole, the contact plug electrically coupled to the recessed plug. The contact plug can include a memory element or an additional memory element can be applied over the contact plug.Type: GrantFiled: March 29, 2010Date of Patent: September 13, 2011Assignee: Round Rock Research, LLCInventor: Steven T. Harshfield
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Publication number: 20100184258Abstract: A method and an apparatus for manufacturing a memory cell having a nonvolatile resistive memory element with a limited size active area. The method comprises a first step of providing a dielectric volume and forming a plug opening within the dielectric volume. A recessed plug of a conductive material is then formed within a lower portion of the opening and a dielectric spacer is formed along the sidewalls of an upper portion of the opening. The spacer is cylindrical and has a central hole. A contact plug is subsequently formed within the central hole, the contact plug electrically coupled to the recessed plug. The contact plug can include a memory element or an additional memory element can be applied over the contact plug.Type: ApplicationFiled: March 29, 2010Publication date: July 22, 2010Applicant: ROUND ROCK RESEARCH LLCInventor: Steven T. Harshfield
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Patent number: 7687793Abstract: An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.Type: GrantFiled: May 22, 2007Date of Patent: March 30, 2010Assignee: Micron Technology, Inc.Inventors: Steven T. Harshfield, David Q. Wright
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Patent number: 7687796Abstract: A method and an apparatus for manufacturing a memory cell having a non-volatile resistive memory element with a limited size active area. The method comprises a first step of providing a dielectric volume and forming a plug opening within the dielectric volume. A recessed plug of a conductive material is then formed within a lower portion of the opening and a dielectric spacer is formed along the sidewalls of an upper portion of the opening. The spacer is cylindrical and has a central hole. A contact plug is subsequently formed within the central hole, the contact plug electrically coupled to the recessed plug. The contact plug can include a memory element or an additional memory element can be applied over the contact plug.Type: GrantFiled: September 18, 2007Date of Patent: March 30, 2010Assignee: Micron Technology, Inc.Inventor: Steven T. Harshfield
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Publication number: 20090152737Abstract: Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.Type: ApplicationFiled: February 25, 2009Publication date: June 18, 2009Applicant: Micron Technology, Inc.Inventor: Steven T. Harshfield
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Patent number: 7504730Abstract: Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.Type: GrantFiled: December 31, 2002Date of Patent: March 17, 2009Assignee: Micron Technology, Inc.Inventor: Steven T. Harshfield
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Patent number: 7271440Abstract: A method and an apparatus for manufacturing a memory cell having a non-volatile resistive memory element with a limited size active area. The method comprises a first step of providing a dielectric volume and forming a plug opening within the dielectric volume. A recessed plug of a conductive material is then formed within a lower portion of the opening and a dielectric spacer is formed along the sidewalls of an upper portion of the opening. The spacer is cylindrical and has a central hole. A contact plug is subsequently formed within the central hole, the contact plug electrically coupled to the recessed plug. The contact plug can include a memory element or an additional memory element can be applied over the contact plug.Type: GrantFiled: August 31, 2004Date of Patent: September 18, 2007Assignee: Micron Technology, Inc.Inventor: Steven T. Harshfield
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Patent number: 7235419Abstract: An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.Type: GrantFiled: December 14, 2005Date of Patent: June 26, 2007Assignee: Micron Technology, Inc.Inventors: Steven T. Harshfield, David Q. Wright
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Patent number: 7102150Abstract: An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.Type: GrantFiled: May 11, 2001Date of Patent: September 5, 2006Inventors: Steven T. Harshfield, David Q. Wright
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Patent number: 7078755Abstract: Methods are provided for selective formation of oxidation-resistant caps for conductive plugs in semiconductor device fabrication. One embodiment of the present invention forms a sacrificial layer over a recessed polysilicon plug. The sacrificial layer is readily planarized using chemical mechanical planarization to isolate the cap within a recessed via. Then, an immersion plating process is used to replace the atoms of the sacrificial layer with atoms of a desired metal, such as platinum, thereby creating a metal cap isolated within the via. The advantages of planarization to isolate material within recessed via are thus obtained without having to planarize or otherwise etch the desired metal. The cap layer can be further reacted to form a barrier compound prior to forming a capacitor over the plug. Advantageously, the plug structure resists oxidation during fabrication of overlying capacitors that incorporate high dielectric constant materials.Type: GrantFiled: August 5, 2002Date of Patent: July 18, 2006Assignee: Micron Technology, Inc.Inventors: Allen McTeer, Steven T. Harshfield
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Patent number: 7071021Abstract: An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.Type: GrantFiled: July 25, 2002Date of Patent: July 4, 2006Assignee: Micron Technology, Inc.Inventors: Steven T. Harshfield, David Q. Wright
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Patent number: 6831330Abstract: A method and an apparatus for manufacturing a memory cell having a non-volatile resistive memory element with a limited size active area. The method comprises a first step of providing a dielectric volume and forming a plug opening within the dielectric volume. A recessed plug of a conductive material is then formed within a lower portion of the opening and a dielectric spacer is formed along the sidewalls of an upper portion of the opening. The spacer is cylindrical and has a central hole. A contact plug is subsequently formed within the central hole, the contact plug electrically coupled to the recessed plug. The contact plug can include a memory element or an additional memory element can be applied over the contact plug.Type: GrantFiled: May 30, 2002Date of Patent: December 14, 2004Assignee: Micron Technology, Inc.Inventor: Steven T. Harshfield
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Publication number: 20040124503Abstract: Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.Type: ApplicationFiled: December 31, 2002Publication date: July 1, 2004Inventor: Steven T. Harshfield
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Patent number: 6607974Abstract: Annular and linear contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.Type: GrantFiled: December 14, 2001Date of Patent: August 19, 2003Assignee: Micron Technology, Inc.Inventor: Steven T. Harshfield
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Patent number: 6563156Abstract: Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.Type: GrantFiled: March 15, 2001Date of Patent: May 13, 2003Assignee: Micron Technology, Inc.Inventor: Steven T. Harshfield
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Patent number: RE40842Abstract: Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.Type: GrantFiled: December 9, 2004Date of Patent: July 14, 2009Assignee: Micron Technology, Inc.Inventor: Steven T. Harshfield