Abstract: This invention relates to a method of implanting a substrate comprising scanning an ion beam relative to a substrate along a series of scan lines extending in a first direction, causing relative rotation between the substrate and the ion beam, scanning the ion beam along a second series of scan lines in a different direction. The implant recipe is changed during scanning in each direction such that different regions are produced during each scanning step. The regions so formed during the two scanning steps overlap such that different parts of the substrate receive different doses according to different recipes during the implantation process. The different recipes may result in different dopant concentrations, doping depths or even different dopant species.