Abstract: Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a suspended Majorana fermion device comprising an ion implant defined nanorod in a semiconducting device are provided. According to an embodiment, a quantum computing device can comprise a Majorana fermion device coupled to an ion implanted region. The quantum computing device can further comprise an encapsulation film coupled to the ion implanted region and a substrate layer. The encapsulation film suspends the Majorana fermion device in the quantum computing device.

Abstract: A method and device providing a strained Si film with reduced defects is provided, where the strained Si film forms a fin vertically oriented on a surface of a non-conductive substrate. The strained Si film or fin may form a semiconductor channel having relatively small dimensions while also having few defects. The strained Si fin is formed by growing Si on the side of a relaxed SiGe block. A dielectric gate, such as, for example, an oxide, a high “k” material, or a combination of the two, may be formed on a surface of the strained Si film. Additionally, without substantially affecting the stress in the strained Si film, the relaxed SiGe block may be removed to allow a second gate oxide to be formed on the surface previously occupied by the relaxed SiGe block.

Abstract: A method and device providing a strained Si film with reduced defects is provided, where the strained Si film forms a fin vertically oriented on a surface of a non-conductive substrate. The strained Si film or fin may form a semiconductor channel having relatively small dimensions while also having few defects. The strained Si fin is formed by growing Si on the side of a relaxed SiGe block. A dielectric gate, such as, for example, an oxide, a high “k” material, or a combination of the two, may be formed on a surface of the strained Si film. Additionally, without substantially affecting the stress in the strained Si film, the relaxed SiGe block may be removed to allow a second gate oxide to be formed on the surface previously occupied by the relaxed SiGe block.