Abstract: Single imido tungsten imido precursors are described for the deposition of tungsten nitride on a substrate by processes such as metal organic chemical vapor deposition. The precursors may be employed to form diffusion barrier layers on microelectronic devices. A method for forming tungsten nitride layers includes the steps of providing a tungsten imido species having the formula LyW(NR)Xn, where R is a carbon containing group, y is an integer between 0 and 5, n is an integer between 0 and 4 and Ly and Xn are selected from the group of non-imido ligands. The single imido tungsten imido species is flowed to a surface of a substrate where the single imido tungsten imido species decomposes to form a tungsten nitride layer.

Abstract: An apparatus for measuring the minority carrier lifetime of a semiconductor sample using radio-frequency coupling. The measuring apparatus includes an antenna that is positioned a coupling distance from a semiconductor sample which is exposed to light pulses from a laser during sampling operations. A signal generator is included to generate high frequency, such as 900 MHz or higher, sinusoidal waveform signals that are split into a reference signal and a sample signal. The sample signal is transmitted into a sample branch circuit where it passes through a tuning capacitor and a coaxial cable prior to reaching the antenna. The antenna is radio-frequency coupled with the adjacent sample and transmits the sample signal, or electromagnetic radiation corresponding to the sample signal, to the sample and receives reflected power or a sample-coupled-photoconductivity signal back.

Abstract: An apparatus for determining the minority carrier lifetime of a semiconductor sample includes a positioner for moving the sample relative to a coil. The coil is connected to a bridge circuit such that the impedance of one arm of the bridge circuit is varied as sample is positioned relative to the coil. The sample is positioned relative to the coil such that any change in the photoconductance of the sample created by illumination of the sample creates a linearly related change in the input impedance of the bridge circuit. In addition, the apparatus is calibrated to work at a fixed frequency so that the apparatus maintains a consistently high sensitivity and high linearity for samples of different sizes, shapes, and material properties. When a light source illuminates the sample, the impedance of the bridge circuit is altered as excess carriers are generated in the sample, thereby producing a measurable signal indicative of the minority carrier lifetimes or recombination rates of the sample.

Abstract: Particle scattering and/or trapping in the feed of particulate matter into a receptacle can be avoided by the use of a particulate matter-dispensing apparatus comprising telescopically-aligned internal and external robes associated with an actuator for telescopic movement of the tubes; the tubes having inner surfaces which are free of any protrusion or recession capable of preventing telescopic movement of the tubes or permitting the resting of particulate matter within the tubes, and the external tube having a distal orifice which is sufficiently smaller than its bore to decrease the flow rate of particulate matter through the tube. The novel apparatus is particularly useful for the discontinuous feeding of particulate polysilicon into a melting crucible.

Abstract: Process for retarding the decomposition of an amine alane, said process comprising contacting an amine alane which is substantially free of zirconium, hafnium, niobium, uranium, vanadium, and chromium, with an effective amount of a decomposition retarding agent selected from the class consisting of O.sub.2, CO, nitrogen axides and alkyl nitrites.

Abstract: Process for retarding the decomposition of an amine alane, said process comprising contacting an amine alane which is substantially titanium-free, with an effective amount of a decomposition retarding agent selected from the class consisting of O.sub.2, CO, nitrogen oxides and alkyl nitrites.

Abstract: Amine alane decomposition is catalyzed by titanium. This effect of titanium can be suppressed by treating it with a passivating agent such as air, nitrous oxide, carbon monoxide and alkyl nitrites. Such agents may be used (1) to treat titanium-containing NaAlH.sub.4 preparations to be used in preparing amine alanes, or (2) to treat amine alanes containing titanium as an impurity, e.g. in finely divided form. Furthermore, the reaction of NaAlH.sub.4, amine, and a halide substance to produce an amine alane can be conducted in the presence of a passivating agent.