Abstract: A multicomponent film on a substrate can be annealed at higher temperatures in oxygen by using a specifically designed annealing vessel. The vessel is formed of a multicomponent material which has at least all of the components of the first multicomponent material of the film or, in the case where there are nonvolatile components, then the vessel is formed of a second multicomponent material which has at least the same composition of relatively volatile components as the first multicomponent film. As the multicomponent film is annealed for a sufficient time within the vessel the multicomponent film remains in contact with a vapor of the first multicomponent material and the vessel material. This process called bomb annealing prevents loss of volatile components from the film and roughening of the film surface and leads to films with lower dielectric loss. Preferred thin film materials are ferroelectric materials although any material could be used.

Abstract: A quantum well electron barrier diode comprising a substrate, a first buffer layer on the substrate, a superlattice structure on the first buffer layer, a second buffer layer on the superlattice structure, a contacting layer on the second buffer layer and first and second ohmic contacts attached to the contacting layer and substrate respectively. The superlattice structure comprises a sequence of a plurality of high energy gap barrier layers interleaved with a plurality of low energy gap wells. The sequence is repeated until the desired thickness is reached. Current flows perpendicular to the layers.