Abstract: A system and method for measuring defects, film thickness, contamination, particles and height of a thin film disk or a silicon wafer. The system includes a processor for determining height. In addition to measuring the height the system can measure film thickness and defects through the measurement of the phase shift of optical signals. An optical profilometer is described which can measure topography on thin film disks, optical substrates or silicon wafers and whose output is independent of the reflectivity of the substrate. This material independent optical profilometer uses a retro-reflector to achieve reflectivity independence and to increase the height sensitivity to 8 times the height of the surface. The reflectivity independent optical profilometer achieves perfect cancellation of the slope of the surface while measuring the topography of the substrate.

Abstract: A system to detect pits in a surface comprises first and second radiation targeting assemblies to target a second radiation beam onto a surface, a first radiation collecting assembly that collects radiation scattered from the surface, a processor coupled to the first radiation collecting assembly, a memory module coupled to the processor and comprising logic instructions which, when executed by the processor, configure the processor to generate a first signal from radiation scattered from the first radiation beam, generate a second signal from radiation scattered from the second radiation beam, record the first signal and the second signal at an array of different positions on the surface, calculate a median value for the first signal and the second signal over the array of different positions on the surface, and use the first signal, the second signal, and the median value to detect pits in the surface.

Abstract: In one embodiment a system to detect multi-domain regions in the soft under layer of a perpendicular magnetic media comprises a radiation targeting assembly to target a polarized radiation beam onto a surface of a substrate covered by the soft under layer of a perpendicular magnetic media, a radiation collecting assembly that collects radiation reflected from the surface, a processor coupled to the first radiation collecting assembly, and a memory module coupled to the processor. The memory module comprises logic instructions which, when executed by the processor, configure the processor to record signal values from radiation reflected by the radiation beam at different positions on the surface and analyze the signal values to detect a region of multiple magnetic domains in the soft under layer of a perpendicular magnetic media.

Abstract: A problem in the inspection of transparent wafers and disks is the detection of top surface particles. More precisely, it is being able to assign a scattering site as being due to a particle at the top or bottom surface of a transparent wafer. A method of the present invention is to use an elliptical mirror, with a pinhole at its top focus, together with a focused beam. The focused beam will diverge as it passes through the transparent wafer and as a result any particle on the bottom surface will see a lower optical intensity and will appear weaker than a top surface particle. The suppression of scattered light from the bottom surface occurs because the source of the scattered light (the bottom surface) is far from the bottom foci of the elliptical mirror.

Abstract: A material independent optical profilometer system and method for measuring at least one of either a height or a slope of an object such as a thin film disk, a silicon wafer, or a glass substrate is disclosed.

Abstract: A double-sided optical inspection system is presented which may detect and classify particles, pits and scratches on thin film disks or wafers in a single scan of the surface. In one embodiment, the invention uses a pair of orthogonally oriented laser beams, one in the radial and one in the circumferential direction on both surfaces of the wafer or thin film disk. The scattered light from radial and circumferential beams is separated via their polarization or by the use of a dichroic mirror together with two different laser wavelengths.

Abstract: In one embodiment, a surface analyzer system comprises a radiation targeting assembly to target a radiation beam onto a surface; and a reflected radiation collecting assembly that collects radiation reflected from the surface, wherein the reflected radiation collecting assembly comprises a mirror to collect radiation reflected from the surface.

Abstract: In one embodiment, a system to inspect an edge region of a wafer, comprises a surface analyzer assembly comprising a radiation targeting assembly that targets a radiation beam onto a surface of the wafer; a reflected radiation collection assembly to collect radiation reflected from a surface of the wafer; means for rotating the surface analyzer assembly about an edge surface of the wafer; and means for detecting one or more defects in the edge region of the wafer.

Abstract: In one embodiment, a system to inspect the edge of a wafer, comprises an surface analyzer assembly, a first drive assembly to impart linear motion between the surface analyzer and a first surface of the wafer, and a second drive assembly to impart rotary motion between the surface analyzer and the wafer about an axis parallel to the first surface of the wafer.

Abstract: Scratches, pits and particles which are smaller or larger than the beam size may be measured and identified by single and multiple beam techniques. In one embodiment, the invention uses a pair of orthogonally oriented laser beams, one in the radial and one in the circumferential direction. In another embodiment, two pairs of orthogonally oriented laser beams are used. The scattered light from radial and circumferential beams allows the detection and classification of particles, pits and scratches. In other embodiments, single beam techniques are used to classify radial and circumferential defects.

Abstract: Embodiments of a material independent optical profilometer are described. In some embodiments, a system comprises a first source of electromagnetic signals, a beam splitter, first and second retroreflection units, first and second detectors, and a processor that receives signals reflected from an object and generates a material independent signal.

Abstract: A system and method for measuring defects, film thickness, contamination, particles and height of a thin film disk or a silicon wafer.

Abstract: An embodiment of the present invention includes receiving a disk having a servo pattern and automatically identifying the center of the servo pattern. The present invention also automatically identifies the center of the physical disk and then automatically identifying the variance between the servo center and physical disk center.

Abstract: A system and method for measuring defects, film thickness, contamination, particles and height of a thin film disk or a silicon wafer.

Abstract: A double-sided optical inspection system is presented which may detect and classify particles, pits and scratches on thin film disks or wafers in a single scan of the surface. In one embodiment, the invention uses a pair of orthogonally oriented laser beams, one in the radial and one in the circumferential direction on both surfaces of the wafer or thin film disk. The scattered light from radial and circumferential beams is separated via their polarization or by the use of a dichroic mirror together with two different laser wavelengths.

Abstract: A system and method for measuring a phase difference between first and second reflected polarized light signal components, including transmitting a first incident light signal toward a first object, wherein the first object is a magnetic disk and/or a glass substrate. Seperating from a reflected light signal, a first mixed reflected polarized light signal component having a first phase and a second mixed reflected polarized light signal component having a second phase that is different from said first phase, wherein said mixed reflected polarized light signal components comprises both P-polarized and S-polarized light relative to a plane of incidence of said reflected light signal. Detecting the intensities of said first and second mixed reflected polarized light signal components, and determining a difference in phase between said first and second mixed reflected polarized light signal component based upon said first and second intensities.

Abstract: A system and method for performing a magnetic imaging, optical profiling, and measuring lubricant thickness and degradation, carbon wear, carbon thickness, and surface roughness of thin film magnetic disks and silicon wafers at angles that are not substantially Brewster's angle of the thin film (carbon) protective overcoat is provided. The system and method involve a focused optical light whose polarization can be switched between P or S polarization is incident at an angle to the surface of the thin film magnetic disk. This generates both reflected and scattered light that may be measured to determine various values and properties related to the surface of the disk, including identifying the Kerr-effect in reflected light for determination of point magnetic properties. In addition, the present invention can mark the position of an identified defect.

Abstract: A combined optical profiler, ellipsometer, reflectometer and scatterometer is described which is configured to have user selectable spot sizes. An attached computer allows the user to select via software the desired spot size on the substrate.

Abstract: Scratches, pits and particles which are smaller or larger than the beam size may be measured and identified by a dual beam technique. This invention uses a pair of orthogonally oriented laser beams, one in the radial and one in the circumferential direction. The scattered light from radial and circumferential beams allows the detection and classification of particles, pits and scratches.

Abstract: A system and method for measuring defects, film thickness, contamination, particles and height of a thin film disk or a silicon wafer. The system includes a processor for determining height. In addition to measuring the height the system can measure film thickness and defects through the measurement of the phase shift of optical signals. An optical profilometer is described which can measure topography on thin film disks, optical substrates or silicon wafers and whose output is independent of the reflectivity of the substrate. This material independent optical profilometer uses a retro-reflector to achieve reflectivity independence and to increase the height sensitivity to 8 times the height of the surface. The reflectivity independent optical profilometer achieves perfect cancellation of the slope of the surface while measuring the topography of the substrate.