Abstract: A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.

Abstract: A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.

Abstract: A dynamic chuck for holding a semiconductor wafer or other substrate includes a plurality of clamping arms mounted radially about a central axis of rotation of the wafer or other substrate. Each of the arms is mounted such that it is free to pivot about a horizontal axis. As the chuck rotates the substrate, a centrifugal force acts on each of the arms, causing it to pivot about its axis of rotation and thereby forcing a holding surface of the arm against a peripheral edge of the substrate. The dynamic chuck is applicable to any type of device in which a semiconductor wafer or other substrate must be held in a centered positioned while it is being spun, including wafer cleaning and rinsing apparatus.

Abstract: A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.

Abstract: A contact for making electrical connections to a moving strip of metal, so as to permit plating the strip, in which grooved members engage just the edges of the strip, thus avoiding scratches on the face of the strip.

Abstract: A supply of hose-shaped wrapping material is pleated axially and fits telescopically about the outer surface of a forming tube. A portion of the wrapping material extends over the upper rim of the tube and downwardly through the tube bore to a position below the lower rim of the tube where it is fastened in a tightly gathered together manner. A gate, positioned below the lower rim of the tube, supports articles fed into the wrapping material in the tube bore. This gate is movable to a position which allows the articles and wrapping material to drop downwardly through the bore to a position below the gate. Such downward movement of the wrapping material draws another portion of wrapping material into the bore of the forming tube.