Patents by Inventor Steven Wienecke

Steven Wienecke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure for increasing mobility in a high electron mobility transistor
    Patent number: 11101379
    Abstract: A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As illustrated herein, a thin InGaN layer introduced in the channel increases the carrier density, reduces the electric field in the channel, and increases the carrier mobility. The dependence of p on InGaN thickness (tInGaN) and indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT, the electron mobility increased from 606 to 1141 cm2/(V·s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: August 24, 2021
    Assignee: THEREGENIS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Brian Romanczyk, Haoran Li, Elaheh Ahmadi, Steven Wienecke, Matthew Guidry, Xun Zheng, Stacia Keller, Umesh K. Mishra
  • A STRUCTURE FOR INCREASING MOBILITY IN A HIGH ELECTRON MOBILITY TRANSISTOR
    Publication number: 20190348532
    Abstract: A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As illustrated herein, a thin InGaN layer introduced in the channel increases the carrier density, reduces the electric field in the channel, and increases the carrier mobility. The dependence of p on InGaN thickness (tInGaN) and indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT, the electron mobility increased from 606 to 1141 cm2/(V·s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.
    Type: Application
    Filed: November 16, 2017
    Publication date: November 14, 2019
    Applicant: The Regents of the University of California
    Inventors: Brian Romanczyk, Haoran Li, Elaheh Ahmadi, Steven Wienecke, Matthew Guidry, Xun Zheng, Stacia Keller, Umesh K. Mishra