Abstract: The present invention relates to the delivery of oligomers for treating patients with a 5? mutation in their DMD gene other than a DMD exon 2 duplication. The invention provides methods and materials for activating an internal ribosome entry site in exon 5 of the DMD gene resulting in translation of a functional truncated isoform of dystrophin. The methods and materials can be used for the treatment of muscular dystrophies arising from 5? mutations in the DMD gene such as Duchenne Muscular Dystrophy or Becker Muscular Dystrophy.

Abstract: An underground mine tire 20 having a nominal bead diameter of 20.0 inches or less has a carcass, a tread 25 and a pair of rubber sidewalls 23, each extending along the outer periphery of the carcass 21 below the tread 25. The tire 20 has a nominal bead width D greater than 8.50 inches and an overall diameter of less than 55 inches. The carcass 21 has at least one radial steel cord reinforced ply 24.

Abstract: An underground mine tire 20 having a nominal bead diameter of 20.0 inches or less has a carcass, a tread 25 and a pair of rubber sidewalls 23, each extending along the outer periphery of the carcass 21 below the tread 25. The tire 20 has a nominal bead width D greater than 8.50 inches and an overall diameter of less than 55 inches. The carcass 21 has at least one radial steel cord reinforced ply 24.

Abstract: A semiconductor overvoltage protection device in the form of a four layer diode has first and third layers of a first conductivity semiconductor material, second and fourth layers of a second conductivity type semiconductor material and a first buried region of the first conductivity type in the third layer adjacent to the junction between the second and third layers. The buried region has a greater impurity concentration than the third layer. The first layer is penetrated by a plurality of dots of the second layer extending through the first layer and the first buried region lies wholly beneath the second layer and is laterally offset from the dots and the first layer.

Abstract: A semiconductor device has a PN junction between first and second regions of the device in which in the intended operation of the device reverse breakdown of the junction occurs. The first region is of lower impurity concentration than the second region and a first buried region of the same conductivity type as and of higher impurity concentration than the first region is provided in the first region adjacent to the junction. A second buried region of the same conductivity type as and of higher impurity concentration than the first buried region is provided in the first buried region and one of the first and second buried regions is formed with a plurality of separate regions of small area arranged so that reverse breakdown of the junction preferentially occurs through the second buried region.

Abstract: A semiconductor device has a PN junction between first and second regions of the device in which in the intended operation of the device reverse breakdown of the junction occurs. The first region is of lower impurity concentration than the second region and a first buried region of the same conductivity type as and of higher impurity concentration than the first region is provided in the first region adjacent to the junction. A second buried region of the same conductivity type as and of higher impurity concentration than the first buried region is provided in the first buried region and one of the first and second buried regions is formed with a plurality of separate regions of small area arranged so that reverse breakdown of the junction preferentially occurs through the second buried region.

Abstract: A semiconductor overvoltage protection device in the form of a four layer diode has first and third layers of a first conductivity semiconductor material, second and fourth layers of a second conductivity type semiconductor material and a first buried region of the first conductivity type in the third layer adjacent to the junction between the second and third layers. The buried region has a greater impurity concentration than the third layer. The first layer is penetrated by a plurality of dots of the second layer extending through the first layer and the first buried region lies wholly beneath the second layer and is laterally offset from the dots and the first layer.

Abstract: A protection circuit is provided for a telecommunications device which has first and second conductors for transmitting and receiving signals to and from the communications device, signal circuitry for processing the signals and switch means for selectively connecting the conductors to the signal circuitry. The circuit comprises a protection circuit means connectable between the first and second conductors and comprising first and second switch means having first and second voltage threshold values. Current monitoring means are provided for monitoring the current through one of the conductors. The first and second switch means are arranged to switch from a first, non-conducting state to a second, conducting state in response to the voltage across the conductors exceeding the first and second combined threshold voltage values, thereby to provide overvoltage protection at a first voltage magnitude.

Abstract: An overvoltage protection circuit for preventing voltage and current overload on a telephone line conductor to prevent damage to a SLIC has a first SCR for connecting the conductor to a reference potential and a first trigger operable to switch the SCR from a first, OFF state to a second, ON state. The trigger is voltage-triggered by voltages exceeding a first magnitude on said conductor and current-triggered by voltages exceeding a second magnitude on said conductor, thereby to provide overvoltage protection at two discrete voltage magnitudes.