Abstract: A memory system includes a CPU that communicates commands and addresses to a main-memory module. The module includes a buffer circuit that relays commands and data between the CPU and the main memory. The memory module additionally includes an embedded processor that shares access to main memory in support of peripheral functionality, such as graphics processing, for improved overall system performance. The buffer circuit facilitates the communication of instructions and data between CPU and the peripheral processor in a manner that minimizes or eliminates the need to modify CPU, and consequently reduces practical barriers to the adoption of main-memory modules with integrated processing power.

Abstract: A memory system includes a CPU that communicates commands and addresses to a main-memory module. The module includes a buffer circuit that relays commands and data between the CPU and the main memory. The memory module additionally includes an embedded processor that shares access to main memory in support of peripheral functionality, such as graphics processing, for improved overall system performance. The buffer circuit facilitates the communication of instructions and data between CPU and the peripheral processor in a manner that minimizes or eliminates the need to modify CPU, and consequently reduces practical barriers to the adoption of main-memory modules with integrated processing power.

Abstract: Memory system enabling memory mirroring in single write operations for the primary and backup data storage. The memory system utilizes a memory channel including one or more latency groups, with each latency group encompassing a number of memory modules that have the same signal timing to the controller. A primary copy and a backup copy of a data element can be written to two memory modules in the same latency group of the channel and in a single write operation. The buses of the channel may have the same trace length to each of the memory modules within a latency group.

Abstract: Memory system enabling memory mirroring in single write operations. The memory system includes a memory channel which can store duplicate copies of a data element into multiple locations in the memory channel. The multiple locations are disposed in different memory modules and have different propagation times with respect to a data signal transmitted from the memory controller. In a write operation, the relative timings of the chip select, command and address signals among the multiple locations are adjusted according to the data propagation delay. As a result, a data element can be written into the multiple locations responsive to a data signal transmitted from the memory controller in a single transmission event.

Abstract: A memory system includes a CPU that communicates commands and addresses to a main-memory module. The module includes a buffer circuit that relays commands and data between the CPU and the main memory. The memory module additionally includes an embedded processor that shares access to main memory in support of peripheral functionality, such as graphics processing, for improved overall system performance. The buffer circuit facilitates the communication of instructions and data between CPU and the peripheral processor in a manner that minimizes or eliminates the need to modify CPU, and consequently reduces practical barriers to the adoption of main-memory modules with integrated processing power.

Abstract: A memory system includes a CPU that communicates commands and addresses to a main-memory module. The module includes a buffer circuit that relays commands and data between the CPU and the main memory. The memory module additionally includes an embedded processor that shares access to main memory in support of peripheral functionality, such as graphics processing, for improved overall system performance. The buffer circuit facilitates the communication of instructions and data between CPU and the peripheral processor in a manner that minimizes or eliminates the need to modify CPU, and consequently reduces practical barriers to the adoption of main-memory modules with integrated processing power.

Abstract: A memory system includes a CPU that communicates commands and addresses to a main-memory module. The module includes a buffer circuit that relays commands and data between the CPU and the main memory. The memory module additionally includes an embedded processor that shares access to main memory in support of peripheral functionality, such as graphics processing, for improved overall system performance. The buffer circuit facilitates the communication of instructions and data between CPU and the peripheral processor in a manner that minimizes or eliminates the need to modify CPU, and consequently reduces practical barriers to the adoption of main-memory modules with integrated processing power.

Abstract: Apparatus and methods allocate I/O bandwidth of an electrical component, such as an IC, by configuring an I/O interface into various types of interfaces. In an embodiment of the present invention, an I/O interface is configured into either a bi-directional contact, unidirectional contact (including either a dedicated transmit or dedicated receive contact) or a maintenance contact used in a maintenance or calibration mode of operation. The I/O interface is periodically reconfigured to optimally allocate I/O bandwidth responsive to system parameters, such as changing data workloads in the electronic components.

Abstract: Apparatus and methods allocate I/O bandwidth of an electrical component, such as an IC, by configuring an I/O interface into various types of interfaces. In an embodiment of the present invention, an I/O interface is configured into either a bi-directional contact, unidirectional contact (including either a dedicated transmit or dedicated receive contact) or a maintenance contact used in a maintenance or calibration mode of operation. The I/O interface is periodically reconfigured to optimally allocate I/O bandwidth responsive to system parameters, such as changing data workloads in the electronic components.

Abstract: Apparatus and methods allocate I/O bandwidth of an electrical component, such as an IC, by configuring an I/O interface into various types of interfaces. In an embodiment of the present invention, an I/O interface is configured into either a bi-directional contact, unidirectional contact (including either a dedicated transmit or dedicated receive contact) or a maintenance contact used in a maintenance or calibration mode of operation. The I/O interface is periodically reconfigured to optimally allocate I/O bandwidth responsive to system parameters, such as changing data workloads in the electronic components.

Abstract: An integrated circuit memory device has a storage array with an adjustable number of memory banks, a row of sense amplifiers to access storage cells in the storage array; and memory access control circuitry. The memory access control circuitry provides a first number of memory banks and a first page size in the integrated circuit memory device in a first mode of operation, and provides a second number of memory banks and a second page size in the integrated circuit memory device in a second mode of operation. The memory access control circuitry includes logic circuitry to adjust the number of memory banks in the integrated circuit memory device, and to adjust the page size of the integrated circuit memory device.

Abstract: An apparatus includes two multi-bank memory devices for storing duplicate data in each memory bank in an embodiment of the invention. The two memory devices are able to replace a more expensive fast-cycle, fixed latency single memory device. In an embodiment of the invention, a memory controller includes controller logic and a plurality of write buffers for interleaving write transactions to each memory bank in the two memory devices. A memory controller also includes tag memory for identifying valid data in the memory banks. In another embodiment of the invention, a game console includes the apparatus and executes game software that requires fixed latency in a mode of operation. In yet another embodiment of the invention, each memory device is coupled to respective write channels. Write data is simultaneously written to two memory banks in respective sets of memory banks in a memory device in an embodiment of the present invention.

Abstract: Apparatus and methods allocate I/O bandwidth of an electrical component, such as an IC, by configuring an I/O interface into various types of interfaces. In an embodiment of the present invention, an I/O interface is configured into either a bi-directional contact, unidirectional contact (including either a dedicated transmit or dedicated receive contact) or a maintenance contact used in a maintenance or calibration mode of operation. The I/O interface is periodically reconfigured to optimally allocate I/O bandwidth responsive to system parameters, such as changing data workloads in the electronic components.

Abstract: Apparatus and methods allocate I/O bandwidth of an electrical component, such as an IC, by configuring an I/O interface into various types of interfaces. In an embodiment of the present invention, an I/O interface is configured into either a bidirectional contact, unidirectional contact (including either a dedicated transmit or dedicated receive contact) or a maintenance contact used in a maintenance or calibration mode of operation. The I/O interface is periodically reconfigured to optimally allocate I/O bandwidth responsive to system parameters, such as changing data workloads in the electronic components.

Abstract: An integrated circuit memory device has a storage array with an adjustable number of memory banks, a row of sense amplifiers to access storage cells in the storage array; and memory access control circuitry. The memory access control circuitry provides a first number of memory banks and a first page size in the integrated circuit memory device in a first mode of operation, and provides a second number of memory banks and a second page size in the integrated circuit memory device in a second mode of operation. The memory access control circuitry includes logic circuitry to adjust the number of memory banks in the integrated circuit memory device, and to adjust the page size of the integrated circuit memory device.

Abstract: Techniques for creating policies for use in policy-based management of quality of service treatments of network data traffic flows are described. Policies are defined based on information about types of flows generated by an application and quality of service functions that are available in the network. Application information is received that defines flows generated by an application, including points where the application generates the traffic flows. QoS information is received that defines one of more quality of service treatments that the network device may apply to data processed by the network device. Based on the information, processing policies that associate the flows with the QoS treatments are determined. Mappings of the application information to the QoS treatments, which may be used to generate the quality of service value when the application program generates flows, are created and stored. Thus, the policies are informed both by application expertise and network expertise.

Abstract: A memory system includes a master device, such as a graphics controller or processor, and an integrated circuit memory device operable in dynamic memory bank count and page size mode. The integrated circuit memory device includes a first and second row of storage cells coupled to a row of sense amplifiers including a first and second plurality of sense amplifiers. During the first mode of operation, a first plurality of data is transferred from the first plurality of storage cells to the row of sense amplifiers. During the second mode of operation, a second plurality of data is transferred from the first row of storage cells to the first plurality of sense amplifiers and a third plurality of data is transferred from the second row of storage cells to the second plurality of sense amplifiers. The second and third plurality of data is accessible simultaneously from the memory device interface during the second mode of operation.

Abstract: Apparatus and methods allocate I/O bandwidth of an electrical component, such as an IC, by configuring an I/O interface into various types of interfaces. In an embodiment of the present invention, an I/O interface is configured into either a bidirectional contact, unidirectional contact (including either a dedicated transmit or dedicated receive contact) or a maintenance contact used in a maintenance or calibration mode of operation. The I/O interface is periodically reconfigured to optimally allocate I/O bandwidth responsive to system parameters, such as changing data workloads in the electronic components.

Abstract: Apparatus and methods allocate I/O bandwidth of an electrical component, such as an IC, by configuring an I/O interface into various types of interfaces. In an embodiment of the present invention, an I/O interface is configured into either a bi-directional contact, unidirectional contact (including either a dedicated transmit or dedicated receive contact) or a maintenance contact used in a maintenance or calibration mode of operation. The I/O interface is periodically reconfigured to optimally allocate I/O bandwidth responsive to system parameters, such as changing data workloads in the electronic components.

Abstract: A memory system includes a master device, such as a graphics controller or processor, and an integrated circuit memory device operable in dynamic memory bank count and page size mode. The integrated circuit memory device includes a first and second row of storage cells coupled to a row of sense amplifiers including a first and second plurality of sense amplifiers. During the first mode of operation, a first plurality of data is transferred from the first plurality of storage cells to the row of sense amplifiers. During the second mode of operation, a second plurality of data is transferred from the first row of storage cells to the first plurality of sense amplifiers and a third plurality of data is transferred from the second row of storage cells to the second plurality of sense amplifiers. The second and third plurality of data is accessible simultaneously from the memory device interface during the second mode of operation.