Patents by Inventor Steven YALISOVE

Steven YALISOVE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation Of An Ultrathin Mixed Surface Layer By Ultrashort Pulsed Laser Irradiation Of Alternating Metallic Film Stacks
    Publication number: 20240157473
    Abstract: Methods, systems, and apparatus to mix thin films using ultrafast irradiation with low-fluence pulses while imparting a minimal thermal load and affording tighter confinement of the modification than existing methods. In some embodiments, this is achieved by depositing thin films of the species to be mixed in alternating layers and then irradiating repeatedly by multiple pulses at or below the melt threshold for the species.
    Type: Application
    Filed: November 14, 2023
    Publication date: May 16, 2024
    Inventors: Steven YALISOVE, Ben Torralva, Abdul Ansari
  • Femtosecond laser-induced formation of single crystal patterned semiconductor surface
    Patent number: 10431455
    Abstract: The interaction between multiple intense ultrashort laser pulses and solids typically produces a regular nanoscale surface corrugation. A coupled mechanism has been identified that operates in a specific range of fluences in GaAs that exhibits transient loss of the imaginary part of the dielectric function and X2, which produces a unique corrugation known as high spatial frequency laser induced periodic surface structures (HSFL). This mechanism is unique in that the corrugation does not involve melting or ablation.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: October 1, 2019
    Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
    Inventors: Michael J. Abere, Steven Yalisove, Ben Torralva
  • FEMTOSECOND LASER-INDUCED FORMATION OF SINGLE CRYSTAL PATTERNED SEMICONDUCTOR SURFACE
    Publication number: 20180277366
    Abstract: The interaction between multiple intense ultrashort laser pulses and solids typically produces a regular nanoscale surface corrugation. A coupled mechanism has been identified that operates in a specific range of fluences in GaAs that exhibits transient loss of the imaginary part of the dielectric function and X2, which produces a unique corrugation known as high spatial frequency laser induced periodic surface structures (HSFL). This mechanism is unique in that the corrugation does not involve melting or ablation.
    Type: Application
    Filed: September 16, 2016
    Publication date: September 27, 2018
    Inventors: Michael J. ABERE, Steven YALISOVE, Ben TORRALVA