Abstract: An apparatus is disclosed for dismantling a pallet comprising an elongated handle having a free end and an attachment end, wherein the attachment end is coupled with a crossbar having a horizontal axis extending perpendicular to the plane of the handle. The apparatus also has one or a plurality of blades extending rigidly forward in adjustable communication with the crossbar via a notched aperture in each blade for receiving the crossbar, wherein each blade further comprises a lower curved portion, and an upper portion for engaging a board of a pallet, at least one wheel rotatably coupled with said lower curved portion, and means for clamping the blades to the crossbar.

Abstract: An apparatus is disclosed for dismantling a pallet comprising an elongated handle having a free end and an attachment end, wherein the attachment end is coupled with a crossbar having a horizontal axis extending perpendicular to the plane of the handle. The apparatus also has one or a plurality of blades extending rigidly forward in adjustable communication with the crossbar via a notched aperture in each blade for receiving the crossbar, wherein each blade further comprises a lower curved portion, and an upper portion for engaging a board of a pallet, at least one wheel rotatably coupled with said lower curved portion, and means for clamping the blades to the crossbar.

Abstract: An imaging device comprising a linear array of laser diodes that are adapted to provide an optical output comprising a plurality of spaced-apart optical beams. Focusing optics are configured to form a plurality of image points from said spaced-apart optical beams, the image points being spaced apart along a first axis. The image points have a non-uniform spacing along the first axis. By scanning the linear array along a photosensitive plate, and timing the firing of lasers accordingly, every pixel point on the photosensitive plate can be imaged by one of the image points from the laser array. Non-uniform spacing of the image points can provide advantages in heat dissipation from the laser elements, and reduction of some printing artifacts on the photosensitive plate.

Abstract: An improved integrated optical device (5a-5g) is disclosed containing first and second devices (10a-10g; 15a, 15e), optically coupled to each other and formed in first and second different material systems. One of the first or second devices (10a-10g, 15a, 15e) has a Quantum Well Intermixed (QWI) region (20a, 20g) at or adjacent a coupling region between the first and second devices (10a-10g; 15a, 15e). The first material system may be a III-V semiconductor based on Gallium Arsenide (GaAs) or Indium Phosphide (InP), while the second material may be Silica (SiO2), Silicon (Si), Lithium Niobate (LiNbO3), a polymer, or glass.

Abstract: A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible.

Abstract: There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of plasma etching at least part of a surface of the device body portion (5) prior to depositing a dielectric layer (51) thereon so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substanially comprise “point” defects.

Abstract: There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of plasma etching at least part of a surface of the device body portion (5) prior to depositing a dielectric layer (51) thereon so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substantially comprise “point” defects.

Abstract: There is disclosed an oral cleansing product comprising as an abrasive an alumnina in the form of particles having d10 below 3.5 &mgr;m, d50 below 1.0 &mgr;m, and a specific surface area below 6 m2/g.

Abstract: There is disclosed a toothpaste comprising as an abrasive an alumina in the form of particles having d10 below 3.5 &mgr;m, d50 below 1.0 &mgr;m and a specific surface area below 6 m2/g.

Abstract: An improved integrated optical device (5a-5g) is disclosed containing first and second devices (10a-10g; 15a, 15e), optically coupled to each other and formed in first and second different material systems. One of the first or second devices (10a-10g, 15a, 15e) has a Quantum Well Intermixed (QWI) region (20a, 20g) at or adjacent a coupling region between the first and second devices (10a-10g; 15a, 15e). The first material system may be a Ill-V semiconductor based on Gallium Arsenide (GaAs) or Indium Phosphide (InP), while the second material may be Silica (SiO2), Silicon (Si), Lithium Niobate (LiNbO3), a polymer, or glass.

Abstract: There is disclosed an improved method of manufacturing of an optical device (40), particularly semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and optical detectors. The invention provides a method of manufacturing optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well (QW) structure (30), the method including the step of: processing the device body portion (15) so as to create extended defects at least in a portion (53) of the device portion (5). Each extended defect is a structural defect comprising a plurality of adjacent “point” defects.

Abstract: There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of depositing a dielectric layer (51) on at least part of a surface of the device body portion (5) so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substantially comprise “point” defects.