Abstract: There is provided a multi-junction photovoltaic device comprising a first sub-cell disposed over a second sub-cell, the first sub-cell comprising a photoactive region comprising a layer of perovskite material and the second sub-cell comprising a silicon heterojunction (SHJ).

Abstract: There is provided a multi-junction photovoltaic device comprising a first sub-cell disposed over a second sub-cell, the first sub-cell comprising a photoactive region comprising a layer of perovskite material and the second sub-cell comprising a silicon heterojunction (SHJ).

Abstract: There is provided a multi-junction photovoltaic device (100) comprising a first sub-cell (110) disposed over a second sub-cell (120), the first sub-cell comprising a photoactive region comprising a layer of perovskite material and the second sub-cell comprising a silicon heterojunction (SHJ).

Abstract: A laser device is disclosed that provides at least an ultraviolet laser beam and preferably both an ultraviolet laser beam and a visible laser beam. The laser device includes a semiconductor laser device (e.g. a laser diode) to generate visible laser light which is coupled into a frequency doubling crystal taking the form of a single crystal thin film frequency-doubling waveguide structure. The single crystal thin film frequency-doubling waveguide converts a portion of the visible light emitted by the laser diode into ultraviolet light. Both visible and ultraviolet laser light is emitted from the waveguide. As an example, the single crystal thin film frequency-doubling frequency doubling waveguide includes a frequency doubling crystal region composed of ?-BaB2O4 (?-BBO), a cladding region composed of materials that are transparent or nearly transparent at the wavelength of the ultraviolet laser light beam and a supporting substrate composed of any material.

Abstract: A laser device is disclosed that provides at least an ultraviolet laser beam and preferably both an ultraviolet laser beam and a visible laser beam. The laser device includes a semiconductor laser device (e.g. a laser diode) to generate visible laser light which is coupled into a frequency doubling crystal taking the form of a single crystal thin film frequency-doubling waveguide structure. The single crystal thin film frequency-doubling waveguide converts a portion of the visible light emitted by the laser diode into ultraviolet light. Both visible and ultraviolet laser light is emitted from the waveguide. As an example, the single crystal thin film frequency-doubling frequency doubling waveguide includes a frequency doubling crystal region composed of ?-BaB2O4 (?-BBO), a cladding region composed of materials that are transparent or nearly transparent at the wavelength of the ultraviolet laser light beam and a supporting substrate composed of any material.

Abstract: A laser device is disclosed that provides at least an ultraviolet laser beam and preferably both an ultraviolet laser beam and a visible laser beam. The laser device includes a semiconductor laser device (e.g. a laser diode) to generate visible laser light which is coupled into a frequency doubling crystal taking the form of a single crystal thin film frequency-doubling waveguide structure. The single crystal thin film frequency-doubling waveguide converts a portion of the visible light emitted by the laser diode into ultraviolet light. Both visible and ultraviolet laser light is emitted from the waveguide. As an example, the single crystal thin film frequency-doubling frequency doubling waveguide includes a frequency doubling crystal region composed of ?-BaB2O4 (?-BBO), a cladding region composed of materials that are transparent or nearly transparent at the wavelength of the ultraviolet laser light beam and a supporting substrate composed of any material.

Abstract: A laser device is disclosed that provides at least an ultraviolet laser beam and preferably both an ultraviolet laser beam and a visible laser beam. The laser device includes a semiconductor laser device (e.g. a laser diode) to generate visible laser light which is coupled into a frequency doubling crystal taking the form of a single crystal thin film frequency-doubling waveguide structure. The single crystal thin film frequency-doubling waveguide converts a portion of the visible light emitted by the laser diode into ultraviolet light. Both visible and ultraviolet laser light is emitted from the waveguide. As an example, the single crystal thin film frequency-doubling frequency doubling waveguide includes a frequency doubling crystal region composed of ?-BaB2O4 (?-BBO), a cladding region composed of materials that are transparent or nearly transparent at the wavelength of the ultraviolet laser light beam and a supporting substrate composed of any material.

Abstract: A method of fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, in sequence, a first cladding region (4), a first optical guiding region (5), an active region (6), a second optical guiding region (7) and a second cladding region (8). Each of the first cladding region (4), the first optical guiding region (5), the active region (6), the second optical guiding region (7) and the second cladding region (8) is deposited by molecular beam epitaxy.

Abstract: A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure (16) fabricated in a nitride materials system and including an aluminum-containing cladding region or an aluminum-containing optical guiding region (5). The etching step forms a mesa (17), and also exposes one or more portions of the aluminum-containing cladding region or the aluminum-containing optical guiding region (5). The or each exposed portion of the aluminum-containing cladding region or the aluminum-containing optical guiding region (5) is then oxidized to form a current blocking layer (18) laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer (11) is deposited, the current blocking layer (18) will prevent the contact layer (11) from making direct contact with the buffer layer (3).

Abstract: A semiconductor light-emitting device fabricated in a nitride material system has an active region disposed over a substrate. The active region comprises a first aluminium-containing layer forming the lowermost layer of the active region, a second aluminium-containing layer forming the uppermost layer of the active region, and at least one InGaN quantum well layer disposed between the first aluminium-containing layer and the second aluminum-containing layer. The aluminium-containing layers provide improved carrier confinement in the active region, and so increase the output optical power of the device.

Abstract: A method of modifying the optical properties of a processed nitride semiconductor light-emitting device initially comprises disposing the processed nitride semiconductor light-emitting device in a vacuum chamber. One or more nitride semiconductor layers are then grown by molecular beam epitaxy thereby to modify the optical properties of the processed light-emitting device. Activated nitrogen, for example from a plasma source, is supplied to the vacuum chamber during growth of the nitride semiconductor layer(s). The use of activated nitrogen reduces the growth temperature required for the growth of the nitride semiconductor layer(s), as the need for thermal activation of a nitrogen species is eliminated. Moreover, use of a growth method such as, for example, plasma-assisted MBE to grow the nitride semiconductor layer(s) allows much more precise control of their thickness and composition.

Abstract: A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region. The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown.

Abstract: A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers (11,13,15,17) with each pair of barrier layers being separated by a quantum well layer (12,14,16), comprises annealing each barrier layer (11,13,15,17) separately. Each barrier layer (11,13,15,17) is annealed once it has been grown, and before a layer is grown over the barrier layer. A device grown by the method of the invention has a significantly higher optical power output than a device made by a convention fabrication process having a single annealing step.

Abstract: A semiconductor light-emitting device is fabricated in a nitride materials system and has an active region comprising two or more quantum well layers. Each quantum well layer is separated from a neighbouring quantum well layer by a respective barrier layer. The or each barrier layer has a thickness that is at least 13 times as great as the thickness of any one of the quantum well layers. This increases the output power of the device.

Abstract: A method of manufacturing a nitride semiconductor device comprises the steps of: growing an InxGa1-xN (0?x?1) layer, and growing an aluminium-containing nitride semiconductor layer over the InxGa1-xN layer at a growth temperature of at least 500° C. so as to form an electron gas region at an interface between the InxGa1-xN layer and the nitride semiconductor layer. The nitride semiconductor layer is then annealed at a temperature of at least 800° C. The method of the invention can provide an electron gas having a sheet carrier density of 6×1013 cm?2 or greater. An electron gas with such a high sheet carrier concentration can be obtained with an aluminium-containing nitride semiconductor layer having a relatively low aluminium concentration, such as an aluminium mole fraction of 0.3 or below, and without the need to dope the aluminium-containing nitride semiconductor layer or the InxGa1-xN layer.

Abstract: A method of growing an AlGaN semiconductor layer structure by Molecular Beam Epitaxy comprises supplying ammonia, gallium and aluminium to a growth chamber thereby to grow a first (Al,Ga)N layer by MBE over a substrate disposed in the growth chamber. The first (Al,Ga)N layer has a non-zero aluminium mole fraction. Ammonia is supplied at a beam equivalent pressure of at least 1 10?4 mbar, gallium is supplied at a beam equivalent pressure of at least 1 10?8 mbar and aluminium is supplied at a beam equivalent pressure of at least 1 10?8 mbar during the growth step. Once the first (Al,Ga)N layer has been grown, varying the supply rate of gallium and/or aluminium enables a second (Al,Ga)N layer, having a different aluminium mole fraction from the first (Al,Ga)N layer to be grown by MBE over the first (Al,Ga)N layer. This process may be repeated to grown an (Al,Ga)N multilayer structure.

Abstract: A method of MBE growth of a semiconductor layer structure comprises growing a first (Al,Ga)N layer (step 13) over a substrate at the first substrate temperature (T1) using ammonia as the nitrogen precursor. The substrate is then cooled (step 14) to a second-substrate temperature (T2) which is lower than the first substrate temperature. An (In,Ga)N quantum well structure is then grown (step 15) over the first (Al,Ga)N layer by MBE using ammonia as the nitrogen precursor. The supply of ammonia to the substrate is maintained continuously during the first growth step, the cooling step, and the second growth step. After completion of the growth of the (In,Ga)N quantum well structure, the substrate may be heated to a third temperature (T3) which is greater than the second substrate temperature (T2). A second (Al,Ga)N layer is then grown over the (In,Ga)N quantum well structure (step 17).

Abstract: A method of growing a p-type nitride semiconductor material by molecular beam epitaxy (MBE) uses bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms. Ammonia gas is used as the nitrogen precursor for the MBE growth process. To grow p-type GaN, for example, by the method of the invention, gallium, ammonia and Cp2Mg are supplied to an MBE growth chamber; to grow p-type AlGaN, aluminium is additionally supplied to the growth chamber. The growth process of the invention produces a p-type carrier concentration, as measured by room temperature Hall effect measurements, of up to 2 1017 cm-3, without the need for any post-growth step of activating the dopant atoms.

Abstract: A semiconductor light-emitting device and a method of manufacture thereof A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure (16) fabricated in a nitride materials system and including an aluminium-containing cladding region or an aluminium-containing optical guiding region (5). The etching step forms a mesa (17), and also exposes one or more portions of the aluminium-containing cladding region or the aluminium-containing optical guiding region (5). The or each exposed portion of the aluminium-containing cladding region or the aluminium-containing optical guiding region (5) Is then oxidised to form a current blocking layer (18) laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer (11) is deposited, the current blocking layer (18) will prevent the contact layer (11) from making direct contact with the buffer layer (3).