Abstract: An atomic layer deposition-deposited silicon dioxide/metal oxide-nanolaminate, comprising at least one layer of silicon dioxide and at least one layer of a metal oxide, and having a wet etch rate in an etchant, said wet etch rate being either greater or smaller than both a wet etch rate of a film of silicon dioxide and a wet etch rate of a film of said metal oxide in said etchant. Also provided is a method for manufacturing the same.

Abstract: An atomic layer deposition-deposited silicon dioxide/metal oxide-nanolaminate, comprising at least one layer of silicon dioxide and at least one layer of a metal oxide, and having a wet etch rate in an etchant, said wet etch rate being either greater or smaller than both a wet etch rate of a film of silicon dioxide and a wet etch rate of a film of said metal oxide in said etchant. Also provided is a method for manufacturing the same.

Abstract: Methods for depositing silicon oxide in a batch reactor are provided. In some embodiments, a plurality of vertically separated substrates is provided in a reaction chamber. Tetraethyl orthosilicate (TEOS) is pulsed into the reaction chamber by direct liquid injection. Ozone is flowed into the reaction chamber simultaneously or alternately with the TEOS. The deposition is performed at about 10 Torr or less to extend the mean free path length of the ozone molecules. According to some embodiments, the deposition allows openings in the substrates to be filled while the occurrence of voids is maintained at a low level.