Abstract: A memory includes an array of active memory cells arranged in rows and columns, and at least one dummy memory cell column adjacent the array of active memory cells. A sensing circuit is coupled to the at least one dummy memory cell column to sense at least one variation associated with the at least one dummy memory cell column. An assist circuit is coupled to the array of active memory cells. An assist determination controller is coupled to the sensing circuit to store a look-up table of output assist values corresponding to different variations associated with the at least one dummy memory cell column, to determine an output assist value from the look-up table based upon the at least sensed variation, and to operate the assist circuit based upon the determined output assist value.

Abstract: A system and method transcodes an input video bit stream having a first encoding profile into an output video bit stream having a second encoding profile. The system includes a first module (302) and a second module (306). The system further includes a memory module (304). The first module (302) decodes the input video bit stream for generating pixel data and macroblock specifications. The second module (306) encodes the pixel data and the macroblock specifications for constructing the output video bit stream. The memory module (304) includes a first buffer module and a second buffer module. The first buffer module stores the pixel data and the second buffer module stores the macroblock specifications.

Abstract: A display panel comprises an array of light elements arranged in n rows by m columns. At least one driver is configured to drive one of said columns and rows, wherein the or each driver is configured to drive each of said columns or said rows. A plurality of the display panels may be used together to form a display panel system.

Abstract: An embodiment of a buffer for a transmission line, a circuit including such a buffer, a high-speed data link, and a low-voltage differential signaling (LVDS) system.

Abstract: A system for testing multi-clock domains in an integrated circuit (IC) includes a plurality of clock sources coupled to a plurality of clock controllers. Each of the clock sources generates a fast clock associated with one of the multi-clock domains. Each of the clock controllers is configured to provide capture pulses to test one clock domain. The capture pulses provided to a clock domain are at a frequency of a fast clock associated with the clock domain. The clock controllers operate sequentially to provide the capture pulses to test the clock domains.

Abstract: A circuit includes a differential amplifier having a folded cascode architecture with a pair of cascode transistors. A sensing circuit senses a common mode input voltage of a differential input signal applied to the differential amplifier. A bias generator circuit generates a bias voltage for application to the pair of cascode transistors in the folded cascode architecture. The bias generator circuit is connected to an output of the sensing circuit such that the generated bias voltage has a value which is dependent on the sensed common mode input voltage. This dependence stabilizes a common mode output voltage from the differential amplifier in response to changes in the common mode input voltage.

Abstract: A memory circuit includes a first memory cell node capacitor, a first memory cell node transistor, a second memory cell node having a second memory cell node capacitor and a second memory cell node transistor, and a pre-charging circuit for pre-charging the first and second memory cell nodes to first and second voltage levels, respectively. The circuit includes a reference memory cell having first and second reference cell transistors with an equalizing transistor between, and a sense amplifier that detects a potential difference between reference bit lines from the reference memory cell and the first or second memory cell node, respectively. The reference cell transistors and equalizing transistor perform a first voltage equalization of the memory cell nodes at a predetermined voltage and a second voltage equalization of the memory cell nodes based on first or second reference signals respectively input to the first or second reference cell transistor.

Abstract: An apparatus is formed from a double active layer silicon on insulator (DSOI) substrate that includes first and second active layers separated by an insulating layer. An electrostatic comb drive is formed from the substrate to include a first comb formed from the first active layer and a second comb formed from the second active layer. The comb drive may be used to impart a tilting motion to a micro-mirror. The method of manufacturing provides comb teeth exhibiting an aspect ratio greater than 1:20, with an offset distance between comb teeth of the first and second combs that is less than about 6 ?m.