Abstract: Etching interleaved structures of semiconductor material forming fins of finFETs and local isolation material interposed between the fins is performed alternately and cyclically by alternating etchants cyclically such as by alternating gases during reactive ion etching. Etchants are preferably alternated when one of the semiconductor material and the local isolation material protrudes above the other by a predetermined distance. Since protruding surfaces are etched more rapidly than recessed surfaces, the overall etching process is accelerated and completed in less time such that erosion of other materials to which the etchants are less than optimally selective is reduced and allow improved etching of trenches for improved isolation structures to be formed.

Abstract: A trench isolation structure is formed beneath a topmost surface of a semiconductor substrate. A mandrel structure having a bottommost surface that straddles a sidewall edge of the underlying trench isolation structure is then formed. Nitride spacers are formed on sidewalls of the mandrel structure and thereafter the mandrel structure is removed. A dielectric oxide material is then formed having a topmost surface that is coplanar with a topmost surface of each remaining nitride spacer. Each nitride spacer is removed and thereafter a semiconductor fin is epitaxially grown within a cavity in the dielectric oxide material which exposes a topmost surface of the semiconductor substrate.

Abstract: Etching interleaved structures of semiconductor material forming fins of finFETs and local isolation material interposed between the fins is performed alternately and cyclically by alternating etchants cyclically such as by alternating gases during reactive ion etching. Etchants are preferably alternated when one of the semiconductor material and the local isolation material protrudes above the other by a predetermined distance. Since protruding surfaces are etched more rapidly than recessed surfaces, the overall etching process is accelerated and completed in less time such that erosion of other materials to which the etchants are less than optimally selective is reduced and allow improved etching of trenches for improved isolation structures to be formed.

Abstract: A method for printing a wafer ID on a wafer, the method comprises identifying a wafer ID on a back side of the wafer. Subsequently, etching a plurality of recesses, consistent in size with chip features of the wafer, into the front side of the wafer, such that the plurality of recesses depicts the wafer ID. The method further comprises filling the recesses with a metal.

Abstract: A method for printing a wafer ID on a wafer, the method comprises identifying a wafer ID on a back side of the wafer. Subsequently, etching a plurality of recesses, consistent in size with chip features of the wafer, into the front side of the wafer, such that the plurality of recesses depicts the wafer ID. The method further comprises filling the recesses with a metal.

Abstract: A method and system for repairing photomasks is disclosed. A scanning electron microscope (SEM) is used to identify, measure, and correct defects. The SEM is operated in multiple modes, including a measuring mode and a repair mode. The repair mode is of higher landing energy and exposure time than the measuring mode, and induces shrinkage in the photoresist to correct various features, such as vias that are too small.

Abstract: A method and system for repairing photomasks is disclosed. A scanning electron microscope (SEM) is used to identify, measure, and correct defects. The SEM is operated in multiple modes, including a measuring mode and a repair mode. The repair mode is of higher landing energy and exposure time than the measuring mode, and induces shrinkage in the photoresist to correct various features, such as vias that are too small.

Abstract: A method and system for repairing photomasks is disclosed. A scanning electron microscope (SEM) is used to identify, measure, and correct defects. The SEM is operated in multiple modes, including a measuring mode and a repair mode. The repair mode is of higher landing energy and exposure time than the measuring mode, and induces shrinkage in the photoresist to correct various features, such as vias that are too small.

Abstract: A method and system for repairing photomasks is disclosed. A scanning electron microscope (SEM) is used to identify, measure, and correct defects. The SEM is operated in multiple modes, including a measuring mode and a repair mode. The repair mode is of higher landing energy and exposure time than the measuring mode, and induces shrinkage in the photoresist to correct various features, such as vias that are too small.