Abstract: Disclosed herein is an apparatus comprising a metal shunt and a semiconductor material in electrical contact with the metal shunt, thereby defining a semiconductor/metal interface for passing a flow of current between the semiconductor material and the metal shunt in response to an application of an electrical bias to the apparatus, wherein the semiconductor material and the metal shunt lie in different planes that are substantially parallel planes, the semiconductor/metal interface thereby being parallel to planes in which the semiconductor material and the metal shunt lie, and wherein, when under the electrical bias, the semiconductor/metal interface is configured to exhibit a change in resistance thereof in response to a perturbation. Such an apparatus can be used as a sensor and deployed as an array of sensors.

Abstract: The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×1011 cm?Hz/W for 632 nm illumination and a high dynamic response of 40 dB making such sensors technologically competitive for a wide range of practical applications.

Abstract: The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×1011 cm?Hz/W for 632 nm illumination and a high dynamic response of 40 dB making such sensors technologically competitive for a wide range of practical applications.

Abstract: Disclosed herein is an apparatus comprising a metal shunt and a semiconductor material in electrical contact with the metal shunt, thereby defining a semiconductor/metal interface for passing a flow of current between the semiconductor material and the metal shunt in response to an application of an electrical bias to the apparatus, wherein the semiconductor material and the metal shunt lie in different planes that are substantially parallel planes, the semiconductor/metal interface thereby being parallel to planes in which the semiconductor material and the metal shunt lie, and wherein, when under the electrical bias, the semiconductor/metal interface is configured to exhibit a change in resistance thereof in response to a perturbation. Such an apparatus can be used as a sensor and deployed as an array of sensors.

Abstract: Disclosed herein is an apparatus comprising a metal shunt and a planar semiconductor material in electrical contact with the metal shunt, the metal shunt located on a surface of the semiconductor material, thereby defining a semiconductor/metal interface for passing a flow of current between the semiconductor material and the metal shunt in response to an application of an electrical bias to the apparatus, wherein a portion of that semiconductor material surface is not covered by the metal shunt, wherein the semiconductor material and the metal shunt lie in different planes that are substantially parallel planes, the semiconductor/metal interface thereby being parallel to the plane of semiconductor material, and wherein, when under the electrical bias, the semiconductor/metal interface is configured to exhibit a change in resistance thereof in response to a perturbation. Such an apparatus can be used as a sensor and deployed as an array of sensors.

Abstract: The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×1011 cm?Hz/W for 632 nm illumination and a high dynamic response of 40 dB making such sensors technologically competitive for a wide range of practical applications.

Abstract: Disclosed herein is an apparatus comprising a metal shunt and a planar semiconductor material in electrical contact with the metal shunt, the metal shunt located on a surface of the semiconductor material, thereby defining a semiconductor/metal interface for passing a flow of current between the semiconductor material and the metal shunt in response to an application of an electrical bias to the apparatus, wherein a portion of that semiconductor material surface is not covered by the metal shunt, wherein the semiconductor material and the metal shunt lie in different planes that are substantially parallel planes, the semiconductor/metal interface thereby being parallel to the plane of semiconductor material, and wherein, when under the electrical bias, the semiconductor/metal interface is configured to exhibit a change in resistance thereof in response to a perturbation. Such an apparatus can be used as a sensor and deployed as an array of sensors.

Abstract: The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×1011 cm?Hz/W for 632 nm illumination and a high dynamic response of 40 dB making such sensors technologically competitive for a wide range of practical applications.

Abstract: Disclosed herein is an apparatus for sensing characteristics of an object. In a preferred embodiment, the apparatus comprises an array, wherein the array comprises a plurality of nanoscale hybrid semiconductor/metal devices which are in proximity to an object, each hybrid semiconductor/metal device being configured to produce a voltage in response to a perturbation, wherein the produced voltage is indicative of a characteristic of the object. Any of a variety of nanoscale EXX sensors can be selected as the hybrid semiconductor/metal devices in the array. With such an array, ultra high resolution images of nanoscopic resolution can be generated of objects such as living cells, wherein the images are indicative of a variety of cell biologic processes.

Abstract: The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×1011 cm?Hz/W for 632 nm illumination and a high dynamic response of 40 dB making such sensors technologically competitive for a wide range of practical applications.

Abstract: Disclosed herein is an apparatus for sensing characteristics of an object. In a preferred embodiment, the apparatus comprises an array, wherein the array comprises a plurality of nanoscale hybrid semiconductor/metal devices which are in proximity to an object, each hybrid semiconductor/metal device being configured to produce a voltage in response to a perturbation, wherein the produced voltage is indicative of a characteristic of the object. Any of a variety of nanoscale EXX sensors can be selected as the hybrid semiconductor/metal devices in the array. With such an array, ultra high resolution images of nanoscopic resolution can be generated of objects such as living cells, wherein the images are indicative of a variety of cell biologic processes.

Abstract: Extraordinary piezoconductance, or change in conductance with strain or pressure, is observed in a hybrid metal-semiconductor device formed from a semiconductor thin film and an adjacent metal shunt fabricated on a semi-insulating substrate. The device includes electrodes for applying a current to the device and for measuring a resulting induced voltage. Strain that is induced in the device, including at the interface between the semiconductor and the metal shunt, changes the resistance at the interface. The device can be used to measure strain or environmental conditions such as pressure or temperature. A sensor using the device includes a frame with a thin membrane on which the device is carried. Deformations in the membrane are transferred to the device to induce strain in the device.

Abstract: This invention relates to a method and system for finite element modeling of enhanced magnetoresistance in thin film semiconductors containing at least one metallic inclusion therein. The method and system utilizes finite element analysis techniques as a function of the applied magnetic field and the geometry of the device for comparing the device characteristics with predetermined qualities and modifying the device to achieve a correlation between the device characteristics and the predetermined qualities.

Abstract: Extraordinary piezoconductance, or change in conductance with strain or pressure, is observed in a hybrid metal-semiconductor device formed from a semiconductor thin film and an adjacent metal shunt fabricated on a semi-insulating substrate. The device includes electrodes for applying a current to the device and for measuring a resulting induced voltage. Strain that is induced in the device, including at the interface between the semiconductor and the metal shunt, changes the resistance at the interface. The device can be used to measure strain or environmental conditions such as pressure or temperature. A sensor using the device includes a frame with a thin membrane on which the device is carried. Deformations in the membrane are transferred to the device to induce strain in the device.

Abstract: A magnetoresistive sensor includes a magnetoresistive element and equipment which generates a magnetic field in the magnetoresistive element thereby inducing a biasing magnetic field in the element, where the magnetoresistive element comprises a high electron mobility semiconductor and electrodes which are connected to the semiconductor. If it is an insulator, the equipment, which generates the biasing magnetic field and supplies it to the magnetoresistive element, may contact directly to the magnetoresistive element. If it is a conductor, an insulating separation layer must be set between the equipment and the element. A magnetoresistive element is representatively Corbino disk type or a bar type magnetoresistive element. Another candidate of the magnetoresistive element is an element consisting of a high electron mobility semiconductor, a pair of electrodes which make a current path in the high electron mobility semiconductor, and another pair of electrodes to detect the induced voltage by the current.

Abstract: A symmetric van der Pauw disk of homogeneous nonmagnetic semiconductor material, such as indium antimonide, with an embedded concentric conducting material inhomogeneity, such as gold, exhits room temperature geometric extraordinary magnetoresistance (EMR) as high as 100%, 9,100% and 750,000% at magnetic fields of 0.05, 0.25 and 4.0 Tesla, respectively. Moreover, for inhomogeneities of sufficiently large cross section relative to that of the surrounding semiconductor material, the resistance of the disk is field-independent up to an onset field above which the resistance increases rapidly. These results can be understood in terms of the field-dependent deflection of current around the inhomogeneity.

Abstract: This invention relates to a method and system for finite element modeling of enhanced magnetoresistance in thin film semiconductors containing at least one metallic inclusion therein. The method and system utilizes finite element analysis techniques as a function of the applied magnetic field and the geometry of the device for comparing the device characteristics with predetermined qualities and modifying the device to achieve a correlation between the device characteristics and the predetermined qualities.

Abstract: Mesoscopic magnetic field sensors which can detect weak magnetic fields (typically 0.05 Tesla) over areas as small as tens of thousands of square nanometers (e.g. 40 nm×400 nm). The combination of enhanced magneto-resistance in an inhomogeneous high mobility semiconductor, having special electrode arrangements, with the use of island lithography, enables the production of special semiconductor/metal nano-composite structures, and has made possible the fabrication of an entirely new type of magnetic field sensor which exhibits very superior magneto-resistive behavior.

Abstract: Thin, horizontal-plane Hall sensors for read-head in magnetic recordings and methods for fabricating the sensor provide a novel sensor exhibiting high sensitivity and high spatial resolution.

Abstract: Thin, horizontal-plane Hall sensors for read-head in magnetic recordings and methods for fabricating the sensor provide a novel sensor exhibiting high sensitivity and high spatial resolution.